BFR 183 E6327

Mfr. #:: BFR 183 E6327
제조사:: Infineon Technologies
설명:: RF Bipolar Transistors NPN RF Transistor 12V 65mA 450mW
수명 주기:: 이 제조업체의 새 제품입니다.
데이터 시트:: BFR 183 E6327 데이터 시트
배달:: DHL FedEx Ups TNT EMS
지불:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:
추가 정보:: BFR 183 E6327 추가 정보

제품 속성
속성 값

제조사: 인피니언 테크놀로지스

제품 카테고리: 트랜지스터 - 바이폴라(BJT) - RF

시리즈: BFR183

포장: Digi-ReelR 대체 패키징

부분 별칭: BFR183E6327HTSA1 BFR183E6327XT SP000011054

단위 무게: 0.007090 oz

장착 스타일: SMD/SMT

패키지 케이스: TO-236-3, SC-59, SOT-23-3

기술: 시

장착형: 표면 실장

공급자-장치-패키지: PG-SOT23-3

구성: 하나의

파워맥스: 450mW

트랜지스터형: NPN

전류 수집기 Ic-Max: 65mA

Voltage-Collector-Emitter-Breakdown-Max: 12V

DC-전류-이득-hFE-Min-Ic-Vce: 70 @ 15mA, 8V

주파수 전환: 8GHz

노이즈 피겨-dB-Typ-f: 0.9dB ~ 1.4dB @ 900MHz ~ 1.8GHz

얻다: 17.5dB

Pd 전력 손실: 450 mW

최대 작동 온도: + 150 C

최소 작동 온도: - 65 C

동작 주파수: 8000 MHz

컬렉터-이미터-전압-VCEO-최대: 12 V

트랜지스터 극성: NPN

이미 터-베이스-전압-VEBO: 2 V

최대 DC 수집기 전류: 0.065 A

Tags: BFR183E, BFR183, BFR18, BFR1, BFR

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

BFR 183 E6327 추가 정보

RF Transistors: Infineon RF Transistors include Low Noise Amplifiers and High Linearity Transistors. Devices in the Low Noise category are based on silicon bipolar technology. Moderate transition frequency of fT <20 GHz provides ease of use and stability. Breakdown voltage can safely support supply voltage of 5V. These transistors are suitable for use with AM over VHF/UHF up to 14 GHz. High Linearity Transistors provide OIP3 (Output 3rd Order Intercept Point) above 29 dBm. They are based on Infineon's high volume silicon bipolar and SiGe:C technologies for best in class noise figures. These devices are ideal for drivers, pre-amplifiers, and buffer amplifiers.

Market price

부분 #	제조	설명	재고	가격
BFR183E6327HTSA1 DISTI # BFR183E6327HTSA1CT-ND	Infineon Technologies AG	RF TRANS NPN 12V 8GHZ SOT23-3 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	11781In Stock	1000:$0.1094 500:$0.1394 100:$0.1993 10:$0.3140 1:$0.4100
BFR183E6327HTSA1 DISTI # BFR183E6327HTSA1DKR-ND	Infineon Technologies AG	RF TRANS NPN 12V 8GHZ SOT23-3 RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	11781In Stock	1000:$0.1094 500:$0.1394 100:$0.1993 10:$0.3140 1:$0.4100
BFR183E6327HTSA1 DISTI # BFR183E6327HTSA1TR-ND	Infineon Technologies AG	RF TRANS NPN 12V 8GHZ SOT23-3 RoHS: Compliant Min Qty: 3000 Container: Tape & Reel (TR)	9000In Stock	150000:$0.0698 75000:$0.0723 30000:$0.0795 15000:$0.0844 6000:$0.0917 3000:$0.0965
BFR 183 E6327 DISTI # BFR 183 E6327	Infineon Technologies AG	Trans GP BJT NPN 12V 0.065A 3-Pin SOT-23 T/R (Alt: BFR 183 E6327) RoHS: Compliant Min Qty: 9000 Container: Tape and Reel	Asia - 0	9000:$0.0693 18000:$0.0674 27000:$0.0655 45000:$0.0638 90000:$0.0630 225000:$0.0622 450000:$0.0614
BFR 183 E6327 DISTI # SP000011054	Infineon Technologies AG	Trans GP BJT NPN 12V 0.065A 3-Pin SOT-23 T/R (Alt: SP000011054) RoHS: Compliant Min Qty: 3000 Container: Tape and Reel	Europe - 0	3000:€0.1219 6000:€0.0949 12000:€0.0779 18000:€0.0659 30000:€0.0609
BFR 183 E6327 DISTI # SP000011054	Infineon Technologies AG	Trans GP BJT NPN 12V 0.065A 3-Pin SOT-23 T/R (Alt: SP000011054) RoHS: Compliant Min Qty: 3000 Container: Tape and Reel	Europe - 0	3000:€0.1139 6000:€0.0979 12000:€0.0829 18000:€0.0709 30000:€0.0679
BFR183E6327HTSA1 DISTI # BFR183E6327HTSA1	Infineon Technologies AG	Trans GP BJT NPN 12V 0.065A 3-Pin SOT-23 T/R - Tape and Reel (Alt: BFR183E6327HTSA1) RoHS: Compliant Min Qty: 9000 Container: Reel	Americas - 0	9000:$0.0689 15000:$0.0669 24000:$0.0639 45000:$0.0619 90000:$0.0609
BFR183E6327HTSA1 DISTI # 97Y1218	Infineon Technologies AG	TRANSISTOR, RF, AEC-Q101, NPN, SOT-23-3,Transistor Polarity:NPN,Collector Emitter Voltage V(br)ceo:12V,Transition Frequency ft:8GHz,Power Dissipation Pd:450mW,DC Collector Current:65mA,DC Current Gain hFE:100hFE,RF Transistor RoHS Compliant: Yes	723	1000:$0.0970 500:$0.1070 250:$0.1170 100:$0.1270 50:$0.1760 25:$0.2260 10:$0.2750 1:$0.4000
BFR 183 E6327 DISTI # 726-BFR183E6327	Infineon Technologies AG	RF Bipolar Transistors NPN RF Transistor 12V 65mA 450mW RoHS: Compliant	8157	1:$0.3900 10:$0.2750 100:$0.1270 1000:$0.0970 3000:$0.0830 9000:$0.0760 24000:$0.0710
BFR183E6327HTSA1 DISTI # 726-BFR183E6327HTSA1	Infineon Technologies AG	RF Bipolar Transistors NPN RF Transistor 12V 65mA 450mW RoHS: Compliant	8680	1:$0.3900 10:$0.2750 100:$0.1270 1000:$0.0970 3000:$0.0830 9000:$0.0760 24000:$0.0710
BFR183E6327	Infineon Technologies AG	RF Small Signal Bipolar Transistor, 0.065A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN RoHS: Compliant	37800	100:$0.0700 500:$0.0700 1000:$0.0700 1:$0.0800 25:$0.0800
BFR183E6327HTSA1	Infineon Technologies AG	RF Small Signal Bipolar Transistor, 0.065A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN RoHS: Compliant	9000	500:$0.0800 1000:$0.0800 25:$0.0900 100:$0.0900 1:$0.1000
BFR183E6327HTSA1 DISTI # 8922245P	Infineon Technologies AG	RF TRANSISTOR BJT NPN 12V 0.065A SOT23, RL	300	6250:£0.0620 2500:£0.0690 1250:£0.0750 250:£0.0970
BFR183E6327	Infineon Technologies AG		11896
BFR183E6327	Infineon Technologies AG		7455
BFR183E6327	Infineon Technologies AG	12V,65mA,Bipolar RF NPN Transistor	7200	1:$0.1200 100:$0.1000 500:$0.0900 1000:$0.0900
BFR183E6327HTSA1 DISTI # 2617468	Infineon Technologies AG	TRANSISTOR, RF, AEC-Q101, NPN, SOT-23-3 RoHS: Compliant	723	3000:$0.1320 1000:$0.1540 100:$0.2010 10:$0.4350 1:$0.6340
BFR183E6327HTSA1 DISTI # 2617468	Infineon Technologies AG	TRANSISTOR, RF, AEC-Q101, NPN, SOT-23-3 RoHS: Compliant	748	500:£0.0811 250:£0.0979 100:£0.1030 25:£0.2330 5:£0.2420

관련 상품

영상	부분 #	설명
	Mfr.#: BFR 183 E6327 OMO.#: OMO-BFR-183-E6327	RF Bipolar Transistors NPN RF Transistor 12V 65mA 450mW
	Mfr.#: BFR 181W H6327 OMO.#: OMO-BFR-181W-H6327	RF Bipolar Transistors RF BIP TRANSISTOR
	Mfr.#: BFR 181 E6327 OMO.#: OMO-BFR-181-E6327	RF Bipolar Transistors NPN Silicon RF TRANSISTOR
	Mfr.#: BFR 182W H6327 OMO.#: OMO-BFR-182W-H6327	RF Bipolar Transistors RF BIP TRANSISTOR
	Mfr.#: BFR 181W E6327 OMO.#: OMO-BFR-181W-E6327	RF Bipolar Transistors NPN Silicon RF TRANSISTOR
	Mfr.#: BFR 181W E6327 OMO.#: OMO-BFR-181W-E6327-INFINEON-TECHNOLOGIES	RF TRANS NPN 12V 8GHZ SOT323-3
	Mfr.#: BFR 182 B6663 OMO.#: OMO-BFR-182-B6663-INFINEON-TECHNOLOGIES	RF TRANS NPN 12V 8GHZ SOT23-3
	Mfr.#: BFR 182W H6327 OMO.#: OMO-BFR-182W-H6327-317	RF Bipolar Transistors RF BIP TRANSISTOR
	Mfr.#: BFR 182 E6327 OMO.#: OMO-BFR-182-E6327-317	RF Bipolar Transistors NPN Silicon RF TRANSISTOR
	Mfr.#: BFR 181W H6327 OMO.#: OMO-BFR-181W-H6327-317	RF Bipolar Transistors RF BIP TRANSISTOR

유효성

재고:: Available
주문 시:: 4500
수량 입력:

BFR 183 E6327의 현재 가격은 참고용이며 최상의 가격을 원하시면 판매팀 [email protected]으로 문의 또는 다이렉트 이메일을 보내주십시오.

참고 가격(USD)

수량
단가
내선 가격

1: ~~US$0.09~~; ~~US$0.09~~

10: ~~US$0.09~~; ~~US$0.87~~

100: ~~US$0.08~~; ~~US$8.24~~

500: ~~US$0.08~~; ~~US$38.90~~

1000: ~~US$0.07~~; ~~US$73.20~~

시작

BFR183E 4
BFR183 21
BFR18 85
BFR1 161
BFR 652

최신 제품

XENSIV™ DPS368 Ultra-Small Waterproof Pressure Sen

Infineon’s XENSIV™ DPS368 ultra-small waterproof pressure sensor is capable of measuring both pressure and temperature.
600 V Trench Ultrafast 66xx Series IGBTs

Infineon's 66xx series of high-performance 600 V ultrafast, trench-gate, field stop, insulated-gate bipolar transistors (IGBTs).
Mid-Range+ System Basis Chip (SBC)

Infineon’s Mid-Range+ SBC is an integrated circuit with combined power, communication, safety, and support features all in one device.
Compare BFR 183 E6327

BFR183 vs BFR183E6327 vs BFR183WE6327
BTS7008-2EPA Power Switch

Infineon’s BTS7008-2EPA is a 12 V, smart, high-side power switch, PROFET+2 family of single-, dual-, and quad-channel protected high-side power switches.
µPFC™ Power Factor Correction ICs

The IR115x ICs, utilizing Infineon Technologies’ OCC technology, offer high PF, low THD, and excellent DC Bus regulation.

More Newest Products

BFR 183 E6327

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes