FDD6612A

Mfr. #:: FDD6612A
제조사:: ON Semiconductor
설명:: MOSFET N-CH 30V 9.5A DPAK
수명 주기:: 이 제조업체의 새 제품입니다.
데이터 시트:: FDD6612A 데이터 시트
배달:: DHL FedEx Ups TNT EMS
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ECAD Model:

제품 속성
속성 값

제조사: 페어차일드 반도체

제품 카테고리: FET - 단일

시리즈: 파워트렌치R

포장: Digi-ReelR 대체 패키징

부분 별칭: FDD6612A_NL

단위 무게: 0.009184 oz

장착 스타일: SMD/SMT

패키지 케이스: TO-252-3, DPak (2 Leads + Tab), SC-63

기술: 시

작동 온도: -55°C ~ 175°C (TJ)

장착형: 표면 실장

채널 수: 1 Channel

공급자-장치-패키지: TO-252-3

구성: 하나의

FET형: MOSFET N-채널, 금속 산화물

파워맥스: 1.3W

트랜지스터형: 1 N-Channel

드레인-소스 전압 Vdss: 30V

입력-커패시턴스-Ciss-Vds: 660pF @ 15V

FET 기능: 기준

Current-Continuous-Drain-Id-25°C: 9.5A (Ta), 30A (Tc)

Rds-On-Max-Id-Vgs: 20 mOhm @ 9.5A, 10V

Vgs-th-Max-Id: 3V @ 250μA

Gate-Charge-Qg-Vgs: 9.4nC @ 5V

Pd 전력 손실: 2.8 W

최대 작동 온도: + 175 C

최소 작동 온도: - 55 C

가을철: 4 ns

상승 시간: 5 ns

Vgs 게이트 소스 전압: 20 V

Id-연속-드레인-전류: 30 A

Vds-드레인-소스-고장-전압: 30 V

Rds-On-Drain-Source-Resistance: 15 mOhms

트랜지스터 극성: N-채널

일반 꺼짐 지연 시간: 24 ns

일반 켜기 지연 시간: 9 ns

순방향 트랜스컨덕턴스-최소: 28 S

채널 모드: 상승

Tags: FDD6612A, FDD661, FDD66, FDD6, FDD

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

FDD6612A 설명

***emi: N-Channel PowerTrench® MOSFET, 30V, 30A, 20mΩ

***ure Electronics: N-Channel 30 V 20 mOhm Surface Mount PowerTrench Mosfet TO-252-3

***S.I.T. Europe - USA - Asia: Power Field-Effect Transistor, 9.5A I(D), 30V, 0.02ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252

***ark: MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:30V; Continuous Drain Current, Id:30A; On Resistance, Rds(on):20mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:TO-252 ;RoHS Compliant: Yes

***rchild Semiconductor: This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS( ON) , fast switching speed and extremely low RDS(ON) in a small package.

Market price

부분 #	제조	설명	재고	가격
FDD6612A DISTI # 31022028	ON Semiconductor	DPAK SINGLE NCH	2500	2500:$0.3920
FDD6612A DISTI # FDD6612ACT-ND	ON Semiconductor	MOSFET N-CH 30V 9.5A DPAK RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	2796In Stock	1000:$0.4310 500:$0.5459 100:$0.7040 10:$0.8910 1:$1.0100
FDD6612A DISTI # FDD6612ADKR-ND	ON Semiconductor	MOSFET N-CH 30V 9.5A DPAK RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	2796In Stock	1000:$0.4310 500:$0.5459 100:$0.7040 10:$0.8910 1:$1.0100
FDD6612A DISTI # FDD6612ATR-ND	ON Semiconductor	MOSFET N-CH 30V 9.5A DPAK RoHS: Compliant Min Qty: 2500 Container: Tape & Reel (TR)	2500In Stock	2500:$0.3905
FDD6612A DISTI # C1S541901389334	ON Semiconductor	Trans MOSFET N-CH 30V 9.5A 3-Pin(2+Tab) DPAK T/R RoHS: Compliant	2500	2500:$0.5020
FDD6612A DISTI # FDD6612A	ON Semiconductor	Trans MOSFET N-CH 30V 9.5A 3-Pin(2+Tab) DPAK T/R (Alt: FDD6612A) RoHS: Compliant Min Qty: 2500 Container: Tape and Reel	Europe - 2500	2500:€0.4259 5000:€0.3479 10000:€0.3189 15000:€0.2939 25000:€0.2729
FDD6612A DISTI # FDD6612A	ON Semiconductor	Trans MOSFET N-CH 30V 9.5A 3-Pin(2+Tab) DPAK T/R - Tape and Reel (Alt: FDD6612A) RoHS: Compliant Min Qty: 2500 Container: Reel	Americas - 0	2500:$0.3019 5000:$0.2999 10000:$0.2959 15000:$0.2929 25000:$0.2849
FDD6612A DISTI # 34C0123	ON Semiconductor	Trans MOSFET N-CH 30V 9.5A 3-Pin(2+Tab) DPAK T/R - Product that comes on tape, but is not reeled (Alt: 34C0123) RoHS: Compliant Min Qty: 1 Container: Ammo Pack	Americas - 0	1:$0.8660 10:$0.7360 25:$0.6810 50:$0.6270 100:$0.5720 250:$0.5400 500:$0.5080
FDD6612A DISTI # 34C0123	ON Semiconductor	N CHANNEL MOSFET, 30V, 30A, TO-252,Transistor Polarity:N Channel,Continuous Drain Current Id:30A,Drain Source Voltage Vds:30V,On Resistance Rds(on):0.033ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2V,Product Range:-RoHS Compliant: Yes	759	1:$0.8660 10:$0.7360 25:$0.6810 50:$0.6270 100:$0.5720 250:$0.5400 500:$0.5080 1000:$0.4070
FDD6612A	Fairchild Semiconductor Corporation	Power Field-Effect Transistor, 9.5A I(D), 30V, 0.02ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 RoHS: Compliant	285375	1000:$0.4900 500:$0.5100 100:$0.5300 25:$0.5600 1:$0.6000
FDD6612A	Fairchild Semiconductor Corporation	MOSFET Transistor, N-Channel, TO-252AA	2223	596:$0.3000 126:$0.3360 1:$0.9600
FDD6612A	ON Semiconductor	30V N-CHANNEL POWER TRENCH MOSFET DPAK-3 RoHS: Compliant	Europe - 2500
FDD6612A	Fairchild Semiconductor Corporation	INSTOCK	1367
FDD6612A.. DISTI # 4900017	ON Semiconductor	N CHANNEL MOSFET, 30V, 30A, TO-252 RoHS: Compliant	759	1:$1.3400 10:$1.1300 100:$0.8650 500:$0.7630 1000:$0.6030 2500:$0.5350
FDD6612A.. DISTI # 4900017	ON Semiconductor	N CHANNEL MOSFET, 30V, 30A, TO-252 RoHS: Compliant	759	1:£0.7620 10:£0.6470 25:£0.5990 50:£0.5510 100:£0.5030

영상	부분 #	설명
	Mfr.#: FDD6030BL OMO.#: OMO-FDD6030BL-1190	MOSFET 30V N-Ch PowerTrench
	Mfr.#: FDD6030BLFSC OMO.#: OMO-FDD6030BLFSC-1190	신규 및 오리지널
	Mfr.#: FDD6035 OMO.#: OMO-FDD6035-1190	신규 및 오리지널
	Mfr.#: FDD6035ALFSC OMO.#: OMO-FDD6035ALFSC-1190	신규 및 오리지널
	Mfr.#: FDD6606-NL OMO.#: OMO-FDD6606-NL-1190	신규 및 오리지널
	Mfr.#: FDD6644F054 OMO.#: OMO-FDD6644F054-1190	신규 및 오리지널
	Mfr.#: FDD6685_Q OMO.#: OMO-FDD6685-Q-1190	신규 및 오리지널
	Mfr.#: FDD6688S-NL OMO.#: OMO-FDD6688S-NL-1190	신규 및 오리지널
	Mfr.#: FDD6692A OMO.#: OMO-FDD6692A-1190	신규 및 오리지널
	Mfr.#: FDD6690A-CUT TAPE OMO.#: OMO-FDD6690A-CUT-TAPE-1190	신규 및 오리지널

FDD6612A

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes