SI7212DN-T1-GE3

Mfr. #:: SI7212DN-T1-GE3
제조사:: Vishay
설명:: IGBT Transistors MOSFET 30V 6.8A 2.6W 36mohm @ 10V
수명 주기:: 이 제조업체의 새 제품입니다.
데이터 시트:: SI7212DN-T1-GE3 데이터 시트
배달:: DHL FedEx Ups TNT EMS
지불:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:
추가 정보:: SI7212DN-T1-GE3 추가 정보

제품 속성
속성 값

제조사: 비쉐이 실리콘

제품 카테고리: FET - 어레이

시리즈: -

포장: Digi-ReelR 대체 패키징

부분 별칭: SI7212DN-GE3

장착 스타일: SMD/SMT

패키지 케이스: PowerPAKR 1212-8 Dual

기술: 시

작동 온도: -55°C ~ 150°C (TJ)

장착형: 표면 실장

채널 수: 2 Channel

공급자-장치-패키지: PowerPAKR 1212-8 Dual

구성: 듀얼

FET형: 2 N-Channel (Dual)

파워맥스: 1.3W

트랜지스터형: 2 N-Channel

드레인-소스 전압 Vdss: 30V

입력-커패시턴스-Ciss-Vds: -

FET 기능: 로직 레벨 게이트

Current-Continuous-Drain-Id-25°C: 4.9A

Rds-On-Max-Id-Vgs: 36 mOhm @ 6.8A, 10V

Vgs-th-Max-Id: 1.6V @ 250μA

Gate-Charge-Qg-Vgs: 11nC @ 4.5V

Pd 전력 손실: 1.3 W

최대 작동 온도: + 150 C

최소 작동 온도: - 55 C

Vgs 게이트 소스 전압: 12 V

Id-연속-드레인-전류: 4.9 A

Vds-드레인-소스-고장-전압: 30 V

Rds-On-Drain-Source-Resistance: 36 mOhms

트랜지스터 극성: N-채널

Tags: SI7212D, SI7212, SI721, Si72, SI7

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

SI7212DN-T1-GE3 설명

***et: Transistor MOSFET Array Dual N-CH 30V 4.9A 8-Pin PowerPAK 1212 T/R

*** Europe: N-CH DUAL 30V PPAK 1212-8

***: 30V N-CHANNEL DUAL

***ark: Transistor Polarity:n Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:4.9A; On Resistance Rds(On):0.03Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.6V Rohs Compliant: No

SI7212DN-T1-GE3 추가 정보

Integrated MOSFET Solutions: Vishay Integrated MOSFET Solutions combine components into a single monolithic chip to increase power density, increase efficiency, simplify design, and reduce Bill of Material (BOM) costs. These single- and multi-die MOSFETs integrate features such as Schottky Barrier diodes and ESD protection. These MOSFETs feature low ON-resistance N- and P-channel TrenchFET® technologies and low thermal resistance.

Market price

부분 #	제조	설명	재고	가격
SI7212DN-T1-GE3 DISTI # SI7212DN-T1-GE3CT-ND	Vishay Siliconix	MOSFET 2N-CH 30V 4.9A 1212-8 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	6220In Stock	1000:$0.6326 500:$0.8012 100:$1.0332 10:$1.3070 1:$1.4800
SI7212DN-T1-GE3 DISTI # SI7212DN-T1-GE3DKR-ND	Vishay Siliconix	MOSFET 2N-CH 30V 4.9A 1212-8 RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	6220In Stock	1000:$0.6326 500:$0.8012 100:$1.0332 10:$1.3070 1:$1.4800
SI7212DN-T1-GE3 DISTI # SI7212DN-T1-GE3TR-ND	Vishay Siliconix	MOSFET 2N-CH 30V 4.9A 1212-8 RoHS: Compliant Min Qty: 3000 Container: Tape & Reel (TR)	6000In Stock	3000:$0.5732
SI7212DN-T1-GE3 DISTI # SI7212DN-T1-GE3	Vishay Intertechnologies	Trans MOSFET N-CH 30V 4.9A 8-Pin PowerPAK 1212 T/R - Tape and Reel (Alt: SI7212DN-T1-GE3) RoHS: Not Compliant Min Qty: 3000 Container: Reel	Americas - 0	3000:$0.6059 6000:$0.5879 12000:$0.5639 18000:$0.5489 30000:$0.5339
SI7212DN-T1-GE3 DISTI # 18X0020	Vishay Intertechnologies	MOSFET, DUAL N CHANNEL, 30V, 4.9A, POWERPAK,Transistor Polarity:Dual N Channel,Continuous Drain Current Id:4.9A,Drain Source Voltage Vds:30V,On Resistance Rds(on):0.03ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:600mVRoHS Compliant: Yes	0	1:$1.6300 10:$1.3500 25:$1.2500 50:$1.1400 100:$1.0400 500:$1.0200 1000:$1.0100
SI7212DN-T1-GE3. DISTI # 30AC0188	Vishay Intertechnologies	Continuous Drain Current Id:4.9A,Drain Source Voltage Vds:30V,Automotive Qualification Standard:- RoHS Compliant: No	0	1:$1.0900 3000:$1.0800 6000:$1.0600 12000:$1.0500 18000:$1.0400 30000:$1.0200
SI7212DN-T1-GE3 DISTI # 781-SI7212DN-GE3	Vishay Intertechnologies	MOSFET 30V Vds 12V Vgs PowerPAK 1212-8 RoHS: Compliant	3455	1:$1.6300 10:$1.3500 100:$1.0300 500:$0.8850 1000:$0.7770 3000:$0.7760
SI7212DN-T1-GE3	Vishay Intertechnologies	MOSFET 30V Vds 12V Vgs PowerPAK 1212-8	Americas -

영상	부분 #	설명
	Mfr.#: SI7212DN-T1-E3 OMO.#: OMO-SI7212DN-T1-E3	MOSFET 30V Vds 12V Vgs PowerPAK 1212-8
	Mfr.#: SI7212DN-T1-GE3 OMO.#: OMO-SI7212DN-T1-GE3	MOSFET 30V Vds 12V Vgs PowerPAK 1212-8
	Mfr.#: SI7212DN-T1-GE3 OMO.#: OMO-SI7212DN-T1-GE3-VISHAY	IGBT Transistors MOSFET 30V 6.8A 2.6W 36mohm @ 10V
	Mfr.#: SI7212DN-T1-E3 OMO.#: OMO-SI7212DN-T1-E3-VISHAY	RF Bipolar Transistors MOSFET DUAL N-CH 30V (D-S) FAST SWITCHING
	Mfr.#: SI7212DN OMO.#: OMO-SI7212DN-1190	신규 및 오리지널

SI7212DN-T1-GE3

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes