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IXFR15N100Q3

IXFR15N100Q3
Mfr. #:
IXFR15N100Q3
제조사:
Littelfuse
설명:
MOSFET Q3Class HiPerFET Pwr MOSFET 1000V/10A
수명 주기:
이 제조업체의 새 제품입니다.
데이터 시트:
IXFR15N100Q3 데이터 시트
배달:
DHL FedEx Ups TNT EMS
지불:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IXFR15N100Q3 DatasheetIXFR15N100Q3 Datasheet (P4-P5)
ECAD Model:
추가 정보:
IXFR15N100Q3 추가 정보
제품 속성
속성 값
제조사:
익시스
제품 카테고리:
MOSFET
RoHS:
Y
기술:
시
장착 스타일:
구멍을 통해
패키지/케이스:
TO-247-3
채널 수:
1 Channel
트랜지스터 극성:
N-채널
Vds - 드레인 소스 항복 전압:
1 kV
Id - 연속 드레인 전류:
10 A
Rds On - 드레인 소스 저항:
1.2 Ohms
Vgs - 게이트 소스 전압:
30 V
Qg - 게이트 차지:
64 nC
Pd - 전력 손실:
400 W
구성:
하나의
상표명:
HiPerFET
포장:
튜브
시리즈:
IXFR15N100
트랜지스터 유형:
1 N-Channel
상표:
익시스
상품 유형:
MOSFET
상승 시간:
250 ns
공장 팩 수량:
30
하위 카테고리:
MOSFET
단위 무게:
0.056438 oz
Tags
IXFR15N1, IXFR15N, IXFR15, IXFR1, IXFR, IXF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
N-Channel 1 kV 10 A 64 nC Through Hole Q3-Class HiPerFET Mosfet - ISOPLUS-247
***trelec
MOSFET, Single - N-Channel, 1kV, 10A, 40W, ISOPLUS247
*** Electronics
MOSFET Q3Class HiPerFET Pwr MOSFET 1000V/10A
***i-Key
MOSFET N-CH 1000V 10A ISOPLUS247
*** Services
CoC and 2-years warranty / RFQ for pricing
***icroelectronics
Silicon carbide Power MOSFET 1200 V, 12 A, 520 mOhm (typ., TJ = 150 C) in an HiP247 package
***ure Electronics
N-Channel 1200 V 520 mO 22 nC Silicon Carbide power Mosfet - HiP247
***ical
Trans MOSFET N-CH SiC 1.2KV 12A 3-Pin(3+Tab) HIP-247 Tube
***nell
MOSFET, N-CH, 1.2KV, 12A, 150W, HIP247; Transistor Polarity: N Channel; Continuous Drain Current Id: 12A; Drain Source Voltage Vds: 1.2kV; On Resistance Rds(on): 0.5ohm; Rds(on) Test Voltage Vgs: 20V; Threshold Voltage Vgs: 3.
***r Electronics
Power Field-Effect Transistor, 12A I(D), 1200V, 0.69ohm, 1-Element, N-Channel, Silicon Carbide, Metal-oxide Semiconductor FET
***r Electronics
Power Field-Effect Transistor, 6A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET
***icroelectronics
N-channel 1050 V, 1 Ohm typ., 6 A MDmesh K5 Power MOSFETs in TO-247 package
***ical
Trans MOSFET N-CH 1.05KV 6A 3-Pin(3+Tab) TO-247 Tube
***icroelectronics SCT
Power MOSFETs, 1050V, 6A, TO-247, Tube
***icroelectronics
N-channel 800 V, 0.19 Ohm typ., 19.5 A SuperMESH(TM) 5 Power MOSFET in TO-247 package
*** Source Electronics
Trans MOSFET N-CH 800V 19.5A 3-Pin(3+Tab) TO-247 Tube / MOSFET N-CH 800V 19.5A TO247
***ark
MOSFET, N-CH, 800V, 19.5A, TO-247; Channel Type:N Channel; Drain Source Voltage Vds:800V; Continuous Drain Current Id:19.5A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V RoHS Compliant: Yes
***r Electronics
Power Field-Effect Transistor, 19.5A I(D), 800V, 0.26ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247
***emi
N-Channel Power MOSFET, SUPERFET® II, 800 V, 58 A, 60 mΩ, TO-247
***r Electronics
Power Field-Effect Transistor, 58A I(D), 800V, 0.06ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247
***el Electronic
Aluminum Electrolytic Capacitors 680μF Radial, Can - SMD ±20% Tape & Reel (TR) FT 0.413 10.50mm Surface Mount Automotive, High Temperature Reflow CAP ALUM 680UF 20% 35V SMD
***nell
MOSFET, N CHANNEL, 800V, 58A, TO-247-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 58A; Drain Source Voltage Vds: 800V; On Resistance Rds(on): 0.054ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4
***rchild Semiconductor
SuperFET®II MOSFET is Fairchild Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology istailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. Consequently, SuperFET II MOSFET is very suitable for the switching power applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications.
***ure Electronics
SCT3080KL Series 1200 V 31 A 104 mOhm N-Channel SiC Power Mosfet - TO-247N
***ical
Trans MOSFET N-CH SiC 1.2KV 31A 3-Pin(3+Tab) TO-247N Tube
***ment14 APAC
MOSFET, N-CH, 31A, 1.2KV, TO-247N; Transistor Polarity:N Channel; Continuous Drain Current Id:31A; Source Voltage Vds:1.2kV; On Resistance
***roFlash
Power Field-Effect Transistor, 31A I(D), 1200V, 0.104ohm, 1-Element, N-Channel, Silicon Carbide, Metal-oxide Semiconductor FET, TO-247
***nell
MOSFET, N-CH, 31A, 1.2KV, TO-247N; Transistor Polarity: N Channel; Continuous Drain Current Id: 31A; Drain Source Voltage Vds: 1.2kV; On Resistance Rds(on): 0.08ohm; Rds(on) Test Voltage Vgs: 18V; Threshold Voltage Vgs: 5.6V; Power Dissipation Pd: 165W; Transistor Case Style: TO-247N; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2018)
HiPerFET Power MOSFETs - EXPANSION
IXYS has expanded the HiPerFET MOSTET family by introducing the Q3-Class products. The new Q3-Class provide up to a 25 percent reduction in on-state resistance, 27 percent reduction in input capacitance, 28 percent reduction in gate chare, 41 percent increase in maximum power dissipation, and up to 50 percent reduction in thermal resistances.Learn more.These high-current, Polar HT™/HV™ HiPerFET™ power MOSFETs from IXYS are for hard switching and resonant mode applications. The devices offer low gate charge, excellent ruggedness with a fast intrinsic diode, and higher current handling capability that eliminates the need for multiple components. These HiPerFET MOSFETs are available in standard industrial packages, including isolated types.View all HiPerFET MOSFETs.
Electrical Vehicle DC Fast Chargers
DC charging stations are designed to convert the electrical grid’s AC power into DC power that can then be fed directly into a vehicle’s battery system for fast charging – in 30 minutes or less. Because the conversion from AC to DC power is being done in the charging station, these units can provide higher levels of power (50kW to 350kW and beyond) to the vehicle compared to AC charging stations. Working with tens to hundreds of kilowatts of power, efficient conversion, reliability of the system, and user safety are critical.
HiPerFET™ Power MOSFETs
IXYS  Polar HT™/HV™ HiPerFET™ Power MOSFETs from IXYS are for hard switching and resonant mode applications. The devices offer low gate charge, excellent ruggedness with a fast intrinsic diode, and higher current handling capability that eliminates the need for multiple components. These high current HiPerFET MOSFETs are available in standard industrial packages, including isolated types.
부분 # 제조 설명 재고 가격
IXFR15N100Q3
DISTI # IXFR15N100Q3-ND		IXYS CorporationMOSFET N-CH 1000V 10A ISOPLUS247
RoHS: Compliant
Min Qty: 1
Container: Tube		56In Stock
  • 120:$13.1648
  • 30:$14.3263
  • 1:$17.0400
IXFR15N100Q3
DISTI # 747-IXFR15N100Q3		IXYS CorporationMOSFET Q3Class HiPerFET Pwr MOSFET 1000V/10A
RoHS: Compliant		26
  • 1:$17.8100
  • 10:$16.1900
  • 25:$14.9700
  • 50:$13.7800
  • 100:$13.4400
  • 250:$12.3200
  • 500:$11.1800
IXFR15N100Q3
DISTI # 8011430P		IXYS CorporationMOSFET 1000V 10A Q3 HIPERFET ISOPLUS247, TU4
  • 5:£12.7500
  • 10:£12.1800
  • 25:£11.7600
영상 부분 # 설명
LM134H/NOPB

Mfr.#: LM134H/NOPB

OMO.#: OMO-LM134H-NOPB

 Current & Power Monitors & Regulators 3-Terminal Adjustable Current Source
6383-0

Mfr.#: 6383-0

OMO.#: OMO-6383-0-POMONA-ELECTRONICS

 Conn Banana Plug PL 1 POS ST Cable Mount 1 Port
5167-0

Mfr.#: 5167-0

OMO.#: OMO-5167-0-POMONA-ELECTRONICS

 Conn Banana Jack F 1 POS Crimp/Solder ST Cable Mount 1 Port
LM134H/NOPB

Mfr.#: LM134H/NOPB

OMO.#: OMO-LM134H-NOPB-TEXAS-INSTRUMENTS

 Current & Power Monitors & Regulators 3-Terminal Adjustable Current Source 3-TO -55 to 125
유효성
재고:
26
주문 시:
2009
수량 입력:
IXFR15N100Q3의 현재 가격은 참고용이며 최상의 가격을 원하시면 판매팀 [email protected]으로 문의 또는 다이렉트 이메일을 보내주십시오.
참고 가격(USD)
수량
단가
내선 가격
1
US$17.81
US$17.81
10
US$16.19
US$161.90
25
US$14.97
US$374.25
50
US$13.78
US$689.00
100
US$13.44
US$1 344.00
250
US$12.32
US$3 080.00
500
US$11.18
US$5 590.00
1000
US$10.21
US$10 210.00
2021년부터 반도체 공급 부족으로 인해 아래 가격은 2021년 이전 정상 가격입니다. 확인을 위해 문의를 보내주세요.
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