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SIHB22N60ET5-GE3

SIHB22N60ET5-GE3
Mfr. #:
SIHB22N60ET5-GE3
제조사:
Vishay / Siliconix
설명:
MOSFET 600V Vds E Series D2PAK TO-263
수명 주기:
이 제조업체의 새 제품입니다.
데이터 시트:
SIHB22N60ET5-GE3 데이터 시트
배달:
DHL FedEx Ups TNT EMS
지불:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
SIHB22N60ET5-GE3 DatasheetSIHB22N60ET5-GE3 Datasheet (P4-P6)SIHB22N60ET5-GE3 Datasheet (P7-P9)
ECAD Model:
추가 정보:
SIHB22N60ET5-GE3 추가 정보
제품 속성
속성 값
제조사:
비쉐이
제품 카테고리:
MOSFET
RoHS:
Y
기술:
시
장착 스타일:
SMD/SMT
패키지/케이스:
TO-263-3
채널 수:
1 Channel
트랜지스터 극성:
N-채널
Vds - 드레인 소스 항복 전압:
600 V
Id - 연속 드레인 전류:
21 A
Rds On - 드레인 소스 저항:
180 mOhms
Vgs th - 게이트 소스 임계 전압:
4 V
Vgs - 게이트 소스 전압:
30 V
Qg - 게이트 차지:
57 nC
최소 작동 온도:
- 55 C
최대 작동 온도:
+ 150 C
Pd - 전력 손실:
227 W
구성:
하나의
포장:
릴
시리즈:
E
상표:
비쉐이 / 실리콘닉스
가을 시간:
35 ns
상품 유형:
MOSFET
상승 시간:
27 ns
공장 팩 수량:
800
하위 카테고리:
MOSFET
일반적인 끄기 지연 시간:
66 ns
일반적인 켜기 지연 시간:
18 ns
단위 무게:
0.077603 oz
Tags
SIHB22N60E, SIHB22N60, SIHB22, SIHB2, SIHB, SIH
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***i-Key
MOSFET N-CH 600V 21A TO263
***ark
N-Channel 600V
***et
N-CHANNEL 600V
Industrial Power Solution
Vishay offers one of the industry’s broadest selections of semiconductor and passive components for industrial power supply applications. The Vishay product portfolio for industrial power supplies includes power MOSFETs, power ICs, rectifiers, diodes, capacitors, resistors, and inductors. 
E Series High Voltage MOSFETs
Vishay Siliconix E Series High Voltage MOSFETs are super junction N-Channel power MOSFETs with a 30% reduction in specific ON-Resistance versus the S Series MOSFETs. These E Series high-performance MOSFETs feature low ON-resistance (RDS(on)), low input capacitance (Ciss), reduced capacitive switching losses, and ultra-low gate charge (Qg). The E series MOSFETs are also available in 850VDS high voltage variants with 3A drain current (ID), low RDS(ON) of 0.82Ω, and low gate charge (Qg). These high-performance MOSFETs come in different packages like TO-247AC, TO-220AB, TO-220 FULLPAK, TO-247AC, D2PAK (TO-263), IPAK (TO-251), DPAK (TO-252), and IPAK (TO-251). Typical applications include server and telecom power supplies, lighting, industrial, battery chargers, renewable energy, and SMPS.
부분 # 제조 설명 재고 가격
SIHB22N60ET5-GE3
DISTI # SIHB22N60ET5-GE3-ND		Vishay SiliconixMOSFET N-CH 600V 21A TO263
RoHS: Not compliant
Min Qty: 800
Container: Tape & Reel (TR)		Temporarily Out of Stock
  • 800:$2.5796
SIHB22N60ET5-GE3
DISTI # SIHB22N60ET5-GE3		Vishay IntertechnologiesN-CHANNEL 600V - Tape and Reel (Alt: SIHB22N60ET5-GE3)
RoHS: Not Compliant
Min Qty: 800
Container: Reel		Americas - 0
  • 8000:$1.7900
  • 4800:$1.8900
  • 1600:$1.9900
  • 3200:$1.9900
  • 800:$2.0900
SIHB22N60ET5-GE3
DISTI # 78-SIHB22N60ET5-GE3		Vishay IntertechnologiesMOSFET 600V Vds E Series D2PAK TO-263
RoHS: Compliant		0
  • 800:$2.0800
  • 2400:$1.9700
영상 부분 # 설명
SIHB22N60EF-GE3

Mfr.#: SIHB22N60EF-GE3

OMO.#: OMO-SIHB22N60EF-GE3

 MOSFET Nch 600V Vds 30V Vgs TO-263; w/diode
SIHB22N60AEL-GE3

Mfr.#: SIHB22N60AEL-GE3

OMO.#: OMO-SIHB22N60AEL-GE3

 MOSFET 600V Vds 30V Vgs D2PAK (TO-263)
SIHB22N60E-E3

Mfr.#: SIHB22N60E-E3

OMO.#: OMO-SIHB22N60E-E3

 MOSFET 600V Vds 30V Vgs D2PAK (TO-263)
SIHB22N65E-GE3

Mfr.#: SIHB22N65E-GE3

OMO.#: OMO-SIHB22N65E-GE3

 MOSFET 650V Vds 30V Vgs D2PAK (TO-263)
SIHB22N60ET5-GE3

Mfr.#: SIHB22N60ET5-GE3

OMO.#: OMO-SIHB22N60ET5-GE3

 MOSFET 600V Vds E Series D2PAK TO-263
SIHB22N65E-GE3

Mfr.#: SIHB22N65E-GE3

OMO.#: OMO-SIHB22N65E-GE3-VISHAY

 RF Bipolar Transistors MOSFET 650V 180mOhm@10V 22A N-Ch E-SRS
SIHB22N60AEL-GE3

Mfr.#: SIHB22N60AEL-GE3

OMO.#: OMO-SIHB22N60AEL-GE3-VISHAY

 MOSFET N-CHAN 600V
SIHB22N60E

Mfr.#: SIHB22N60E

OMO.#: OMO-SIHB22N60E-1190

 Power Field-Effect Transistor, 21A I(D), 600V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
SIHB22N60SE3

Mfr.#: SIHB22N60SE3

OMO.#: OMO-SIHB22N60SE3-1190

 Power Field-Effect Transistor, 22A I(D), 600V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
SIHB22N65E

Mfr.#: SIHB22N65E

OMO.#: OMO-SIHB22N65E-1190

 Trans MOSFET N-CH 650V 22A 3-Pin D2PAK - Tape and Reel (Alt: SIHB22N65E)
유효성
재고:
Available
주문 시:
5500
수량 입력:
SIHB22N60ET5-GE3의 현재 가격은 참고용이며 최상의 가격을 원하시면 판매팀 [email protected]으로 문의 또는 다이렉트 이메일을 보내주십시오.
시작
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