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SIHP21N65EF-GE3

SIHP21N65EF-GE3
Mfr. #:
SIHP21N65EF-GE3
제조사:
Vishay
설명:
RF Bipolar Transistors MOSFET 650V 180mOhms@10V 21A N-Ch EF-SRS
수명 주기:
이 제조업체의 새 제품입니다.
데이터 시트:
SIHP21N65EF-GE3 데이터 시트
배달:
DHL FedEx Ups TNT EMS
지불:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
추가 정보:
SIHP21N65EF-GE3 추가 정보
제품 속성
속성 값
Tags
SIHP21, SIHP2, SIHP, SIH
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et
Trans MOSFET N-CH 650V 21A 3-Pin TO-220AB
***ment14 APAC
MOSFET, N CH, 650V, 21A, TO-220AB-3
***i-Key
MOSFET N-CH 650V 21A TO-220AB
***ark
Mosfet, N Ch, 650V, 21A, To-220Ab-3
***ronik
N-CH 700V 21A 180mOhm TO-220AB
***
N-CH 650V TO-220AB
***nell
MOSFET, CANALE N, 650V, 21A, TO-220AB-3; Polarità Transistor:Canale N; Corrente Continua di Drain Id:21A; Tensione Drain Source Vds:650V; Resistenza di Attivazione Rds(on):0.15ohm; Tensione Vgs di Misura Rds(on):10V; Tensione di Soglia Vgs:-; Dissipazione di Potenza Pd:208W; Modello Case Transistor:TO-220AB; No. di Pin:3Pin; Temperatura di Esercizio Max:150°C; Gamma Prodotti:-; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):MSL 1 - Non Limitata; Temperatura di Esercizio Min:-55°C
EF Series High Voltage Power MOSFETs
Vishay / Siliconix EF Series High Voltage Power MOSFETs with Fast Body Diode are N-Channel power MOSFETs with low reverse recovery charge (Qrr) than standard MOSFETs. The EF power MOSFETs come with low Qrr that allows the devices to avoid failure from shoot-through, thermal overstress, and provide low reverse recovery losses. These devices possess ultra-low on-resistance and gate charge that translate into extremely low conduction and switching losses to save energy in high-power, high-performance switch mode applications.
Industrial Power Solution
Vishay offers one of the industry’s broadest selections of semiconductor and passive components for industrial power supply applications. The Vishay product portfolio for industrial power supplies includes power MOSFETs, power ICs, rectifiers, diodes, capacitors, resistors, and inductors. 
부분 # 제조 설명 재고 가격
SIHP21N65EF-GE3
DISTI # SIHP21N65EF-GE3-ND		Vishay SiliconixMOSFET N-CH 650V 21A TO-220AB
RoHS: Compliant
Min Qty: 1
Container: Tube		174In Stock
  • 100:$3.7749
  • 10:$4.6040
  • 1:$5.1600
SIHP21N65EF-GE3
DISTI # SIHP21N65EF-GE3		Vishay IntertechnologiesTrans MOSFET N-CH 650V 21A 3-Pin TO-220AB - Tape and Reel (Alt: SIHP21N65EF-GE3)
RoHS: Not Compliant
Min Qty: 1000
Container: Reel		Americas - 0
  • 1000:$2.3900
  • 2000:$2.2900
  • 4000:$2.1900
  • 6000:$2.1900
  • 10000:$2.0900
SIHP21N65EF-GE3
DISTI # 78-SIHP21N65EF-GE3		Vishay IntertechnologiesMOSFET 650V Vds 30V Vgs TO-220AB
RoHS: Compliant		1028
  • 1:$4.6900
  • 10:$3.8900
  • 100:$3.2000
  • 250:$3.1000
  • 500:$2.7800
  • 1000:$2.3500
SIHP21N65EF-GE3
DISTI # TMOS1217		Vishay IntertechnologiesN-CH 700V 21A 180mOhm TO-220AB
RoHS: Compliant		Stock DE - 20Stock US - 0
  • 1000:$2.7800
SIHP21N65EF-GE3
DISTI # 2400383		Vishay IntertechnologiesMOSFET, N CH, 650V, 21A, TO-220AB-3
RoHS: Compliant		448
  • 1:£3.9600
  • 10:£2.9500
  • 100:£2.4200
  • 250:£2.3500
  • 500:£2.1000
SIHP21N65EF-GE3Vishay IntertechnologiesMOSFET 650V Vds 30V Vgs TO-220AB
RoHS: Compliant		Americas -
    영상 부분 # 설명
    SIHP21N60EF-GE3

    Mfr.#: SIHP21N60EF-GE3

    OMO.#: OMO-SIHP21N60EF-GE3

    		 MOSFET 600V Vds 30V Vgs TO-220AB
    SIHP21N80AE-GE3

    Mfr.#: SIHP21N80AE-GE3

    OMO.#: OMO-SIHP21N80AE-GE3

    		 MOSFET 850V Vds; 30V Vgs TO-220AB
    SIHP21N65EF-GE3

    Mfr.#: SIHP21N65EF-GE3

    OMO.#: OMO-SIHP21N65EF-GE3

    		 MOSFET 650V Vds 30V Vgs TO-220AB
    SIHP21N65EF-GE3

    Mfr.#: SIHP21N65EF-GE3

    OMO.#: OMO-SIHP21N65EF-GE3-VISHAY

    		 RF Bipolar Transistors MOSFET 650V 180mOhms@10V 21A N-Ch EF-SRS
    SIHP21N60EF-GE3

    Mfr.#: SIHP21N60EF-GE3

    OMO.#: OMO-SIHP21N60EF-GE3-VISHAY

    		 MOSFET N-CH 600V 21A TO-220AB
    SIHP21N80AE-GE3

    Mfr.#: SIHP21N80AE-GE3

    OMO.#: OMO-SIHP21N80AE-GE3-VISHAY

    		 E Series Power MOSFET TO-220AB, 235 m @ 10V
    유효성
    재고:
    Available
    주문 시:
    1000
    수량 입력:
    SIHP21N65EF-GE3의 현재 가격은 참고용이며 최상의 가격을 원하시면 판매팀 [email protected]으로 문의 또는 다이렉트 이메일을 보내주십시오.
    참고 가격(USD)
    수량
    단가
    내선 가격
    1
    US$3.52
    US$3.52
    10
    US$3.35
    US$33.49
    100
    US$3.17
    US$317.25
    500
    US$3.00
    US$1 498.15
    1000
    US$2.82
    US$2 820.00
    2021년부터 반도체 공급 부족으로 인해 아래 가격은 2021년 이전 정상 가격입니다. 확인을 위해 문의를 보내주세요.
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