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IRFU7740PBF

IRFU7740PBF
Mfr. #:
IRFU7740PBF
제조사:
Infineon Technologies
설명:
MOSFET TRENCH_MOSFETS
수명 주기:
이 제조업체의 새 제품입니다.
데이터 시트:
IRFU7740PBF 데이터 시트
배달:
DHL FedEx Ups TNT EMS
지불:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
추가 정보:
IRFU7740PBF 추가 정보
제품 속성
속성 값
제조사:
인피니언
제품 카테고리:
MOSFET
RoHS:
Y
기술:
시
장착 스타일:
구멍을 통해
패키지/케이스:
TO-251-3
상표명:
강한IRFET
포장:
튜브
키:
6.22 mm
길이:
6.73 mm
너비:
2.38 mm
상표:
인피니언 테크놀로지스
상품 유형:
MOSFET
공장 팩 수량:
3000
하위 카테고리:
MOSFET
부품 번호 별칭:
SP001573600
단위 무게:
0.011993 oz
Tags
IRFU7, IRFU, IRF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ineon SCT
75V Single N-Channel HEXFET Power MOSFET in a I-PAK package, IPAK-3, RoHS
***ark
MOSFET, 75V, 89 A, 6.8 Ohm, 84 nC, I-PAK, TUBE
***ical
Trans MOSFET N-CH Si 75V 87A 3-Pin(3+Tab) IPAK Tube
***
N-Channel 75 V 87A (Tc) 14W (Tc) Through Hole IPAK (TO-251)
*** Services
CoC and 2-years warranty / RFQ for pricing
***ineon
Benefits: Improved gate, avalanche and dynamic dV/dt ruggedness; Fully characterized capacitance and avalanche SOA; Enhanced body diode dV/dt and dI/dt capability; Lead-free, RoHS compliant; StrongIRFET
***ineon SCT
60V Single N-Channel HEXFET Power MOSFET in a I-Pak package, IPAK-3, RoHS
***ark
MOSFET, 60V, 90A, 4.0 Ohm, 86 nC, I-PAK, TUBE
***ical
Trans MOSFET N-CH Si 60V 110A 3-Pin(3+Tab) IPAK Tube
***
N-Channel 6 V 9A (Tc) 14W (Tc) Through Hole IPAK (TO-251)
***ark
TUBE / Automotive MOSFET 75V, 80A, 9 mOhm, 56 nC Qg, IPAK
***S.I.T. Europe - USA - Asia
Power Field-Effect Transistor, 56A I(D), 75V, 0.009ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA
***ineon
Benefits: Advanced process technology; Ultra-low on-resistance; 175C operating temperature; Fast switching; Repetitive avalanche allowed up to Tjmax; Lead free, RoHS compliant; Automotive qualified
***ment14 APAC
N CHANNEL MOSFET, 60V, 99A, IPAK TranN CHANNEL MOSFET, 60V, 99A, IPAK
***ure Electronics
Single N-Channel 60 V 8.3 mOhm 49 nC HEXFET® Power Mosfet - TO-251
***(Formerly Allied Electronics)
MOSFET, 60V, 99A, 6.8 MOHM, 33 NC QG, LOGIC LEVEL, I-PAK
***ineon SCT
60V Single N-Channel HEXFET Power MOSFET in a I-Pak package, IPAK-3, RoHS
***ark
Transistor; Transistor Type:MOSFET; Continuous Drain Current, Id:99A; Drain Source Voltage, Vds:60V; On Resistance, Rds(on):5.4mohm; Rds(on) Test Voltage, Vgs:4.5V; Threshold Voltage, Vgs Typ:2.5V; Power Dissipation, Pd:143W ;RoHS Compliant: Yes
***(Formerly Allied Electronics)
MOSFET, N Ch., 60V, 77A, 8.4 MOHM, 51 NC QG, I-PAK, Pb-Free
***ineon SCT
60V Single N-Channel HEXFET Power MOSFET in a I-Pak package, IPAK-3, RoHS
***ment14 APAC
MOSFET, N, I-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:56A; Drain Source Voltage Vds:60V; On Resistance Rds(on):7.1mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:110W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:I-PAK; SVHC:No SVHC (20-Jun-2011); Current Id Max:56A; Package / Case:IPAK; Power Dissipation Pd:110W; Pulse Current Idm:315A; Termination Type:Through Hole; Turn Off Time:55ns; Turn On Time:13ns; Voltage Vds Typ:60V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V
***ernational Rectifier
55V Single N-Channel HEXFET Power MOSFET in a I-Pak package
***S.I.T. Europe - USA - Asia
Power Field-Effect Transistor, 42A I(D), 55V, 0.0075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA
***ark
Transistor; Transistor Type:MOSFET; Transistor Polarity:N Channel; Leaded Process Compatible:Yes; Peak Reflow Compatible (260 C):Yes ;RoHS Compliant: Yes
***ment14 APAC
MOSFET, N, I-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:42A; Drain Source Voltage Vds:55V; On Resistance Rds(on):7.5mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:140W; Transistor Case Style:I-PAK; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Alternate Case Style:TO-251; Current Id Max:42A; Current Temperature:25°C; Full Power Rating Temperature:25°C; Lead Length:9.65mm; Lead Spacing:2.28mm; No. of Transistors:1; Package / Case:IPAK; Power Dissipation Pd:140W; Power Dissipation Pd:140W; Pulse Current Idm:360A; SMD Marking:IRFU1010ZPBF; Termination Type:Through Hole; Turn Off Time:30ns; Turn On Time:13ns; Voltage Vds Typ:55V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V
***ure Electronics
Single P-Channel 60 V 0.28 Ohms Through Hole Power Mosfet - IPAK (TO-251)
*** Stop Electro
Power Field-Effect Transistor, 8.8A I(D), 60V, 0.28ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA
***ark
Transistor Polarity:p Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:8.8A; On Resistance Rds(On):0.28Ohm; Transistor Mounting:through Hole; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; No. Of Pins:3Pinsrohs Compliant: No
StrongIRFET™ Power MOSFETs
Infineon StrongIRFET™ Power MOSFET family are optimized for low RDS(on) and high current capability. These devices are ideal for low-frequency applications requiring performance and ruggedness. These MOSFETs have the highest current carrying capability in the industry. This feature leads to increased robustness and reliability for high power density applications which require high efficiency and reliability. 
부분 # 제조 설명 재고 가격
IRFU7740PBF
DISTI # IRFU7740PBF-ND		Infineon Technologies AGMOSFET N CH 75V 87A I-PAK
RoHS: Compliant
Min Qty: 3000
Container: Tube		Temporarily Out of Stock
  • 3000:$0.8130
IRFU7740PBF
DISTI # IRFU7740PBF		Infineon Technologies AGMOSFET, 75V, 89 A,6.8 OHM, 84 NC, I-PAK - Rail/Tube (Alt: IRFU7740PBF)
RoHS: Compliant
Min Qty: 3000
Container: Tube		Americas - 0
  • 3000:$0.6309
  • 6000:$0.6079
  • 12000:$0.5859
  • 18000:$0.5659
  • 30000:$0.5559
IRFU7740PBF
DISTI # 942-IRFU7740PBF		Infineon Technologies AGMOSFET TRENCH_MOSFETS
RoHS: Compliant		0
  • 1:$1.6200
  • 10:$1.3700
  • 100:$1.1000
  • 500:$0.9590
  • 1000:$0.7940
  • 3000:$0.7400
영상 부분 # 설명
IRFU7546PBF

Mfr.#: IRFU7546PBF

OMO.#: OMO-IRFU7546PBF

 MOSFET TRENCH_MOSFETS
IRFU7746PBF

Mfr.#: IRFU7746PBF

OMO.#: OMO-IRFU7746PBF

 MOSFET TRENCH_MOSFETS
IRFU7740PBF

Mfr.#: IRFU7740PBF

OMO.#: OMO-IRFU7740PBF

 MOSFET TRENCH_MOSFETS
IRFU7540PBF

Mfr.#: IRFU7540PBF

OMO.#: OMO-IRFU7540PBF

 MOSFET TRENCH_MOSFETS
IRFU7440PBF

Mfr.#: IRFU7440PBF

OMO.#: OMO-IRFU7440PBF

 MOSFET 40V, 90A, 2.5 mOhm 89 nC Qg, I-Pak
IRFU7540PBF

Mfr.#: IRFU7540PBF

OMO.#: OMO-IRFU7540PBF-INFINEON-TECHNOLOGIES

 MOSFET N CH 60V 90A I-PAK
IRFU7546PBF

Mfr.#: IRFU7546PBF

OMO.#: OMO-IRFU7546PBF-INFINEON-TECHNOLOGIES

 MOSFET N CH 60V 56A I-PAK
IRFU7740PBF

Mfr.#: IRFU7740PBF

OMO.#: OMO-IRFU7740PBF-INFINEON-TECHNOLOGIES

 MOSFET N CH 75V 87A I-PAK
IRFU7746PBF

Mfr.#: IRFU7746PBF

OMO.#: OMO-IRFU7746PBF-INFINEON-TECHNOLOGIES

 MOSFET N CH 75V 56A I-PAK
IRFU7440PBF

Mfr.#: IRFU7440PBF

OMO.#: OMO-IRFU7440PBF-INFINEON-TECHNOLOGIES

 MOSFET N CH 40V 90A I-PAK
유효성
재고:
Available
주문 시:
1986
수량 입력:
IRFU7740PBF의 현재 가격은 참고용이며 최상의 가격을 원하시면 판매팀 [email protected]으로 문의 또는 다이렉트 이메일을 보내주십시오.
참고 가격(USD)
수량
단가
내선 가격
1
US$1.43
US$1.43
10
US$1.22
US$12.20
100
US$0.94
US$94.00
500
US$0.83
US$415.50
1000
US$0.66
US$656.00
3000
US$0.58
US$1 743.00
9000
US$0.56
US$5 040.00
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