IKZ50N65ES5XKSA1

Mfr. #:: IKZ50N65ES5XKSA1
제조사:: Infineon Technologies
설명:: IGBT Transistors To further enhance the best-in-class performance of the TRENCHSTOP 5 IGBT technology, Infineon offers the technology in a high power package with an extra Kelvin emitter pin. The TO-2
수명 주기:: 이 제조업체의 새 제품입니다.
데이터 시트:: IKZ50N65ES5XKSA1 데이터 시트
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ECAD Model:
추가 정보:: IKZ50N65ES5XKSA1 추가 정보

제품 속성
속성 값

제조사:: 인피니언

제품 카테고리:: IGBT 트랜지스터

RoHS:: Y

기술:: 시

패키지/케이스:: TO-247-4

장착 스타일:: 구멍을 통해

구성:: 하나의

컬렉터-이미터 전압 VCEO 최대:: 650 V

수집기-이미터 포화 전압:: 1.35 V

최대 게이트 이미터 전압:: 20 V

25C에서 연속 수집기 전류:: 80 A

Pd - 전력 손실:: 274 W

최소 작동 온도:: - 40 C

최대 작동 온도:: + 175 C

시리즈:: TRENCHSTOP 5 S5

포장:: 튜브

연속 수집가 현재 IC 최대:: 80 A

상표:: 인피니언 테크놀로지스

게이트-이미터 누설 전류:: 100 nA

상품 유형:: IGBT 트랜지스터

공장 팩 수량:: 240

하위 카테고리:: IGBT

상표명:: 트렌치스톱

부품 번호 별칭:: IKZ50N65ES5 SP001636074

단위 무게:: 0.211644 oz

Tags: IKZ50N65E, IKZ5, IKZ

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

IKZ50N65ES5XKSA1 설명

***Components: In a Tube of 30, Infineon IKZ50N65ES5XKSA1 P-Channel IGBT, 80 A 650 V, 4-Pin TO-247

***i-Key: IGBT TRENCH 650V 80A TO247-4

***ronik: IGBT 650V 50A 1,35V TO247-4

***et Europe: IGBT PRODUCTS

***ark: Transistor, Igbt, N-Ch, 650V, 80A, To247; Dc Collector Current:80A; Collector Emitter Saturation Voltage Vce(On):1.35V; Power Dissipation Pd:274W; Collector Emitter Voltage V(Br)Ceo:650V; Transistor Case Style:to-247; No. Of Rohs Compliant: Yes

***ment14 APAC: Prices include import duty and tax. TRANSISTOR, IGBT, N-CH, 650V, 80A, TO247; DC Collector Current:80A; Collector Emitter Saturation Voltage Vce(on):1.35V; Power Dissipation Pd:274W; Collector Emitter Voltage V(br)ceo:650V; Transistor Case Style:TO-247; No. of Pins:4Pins; Operating Temperature Max:175°C; Product Range:TRENCHSTOP 5 Series; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018)

***nell: TRANSISTOR, IGBT, CA-N, 650V, 80A, TO247; Corrente di Collettore CC:80A; Tensione Saturaz Collettore-Emettitore Vce(on):1.35V; Dissipazione di Potenza Pd:274W; Tensione Collettore-Emettitore V(br)ceo:650V; Modello Case Transistor:TO-247; No. di Pin:4Pin; Temperatura di Esercizio Max:175°C; Gamma Prodotti:TRENCHSTOP 5 Series; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):MSL 1 - Non Limitata; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (27-Jun-2018)

***ineon: To further enhance the best-in-class performance of the TRENCHSTOP 5 IGBT technology, Infineon offers the technology in a high power package with an extra Kelvin emitter pin. The TO-247 4pin provides ultra-low inductance to the gate-emitter control loop and brings TRENCHSTOP 5 IGBT to the next level of best in class switching performance. The standard TO-247 package body has been taken and an extra, 4th pin, has been added to enable the Kelvin emitter configuration. | Summary of Features: Very low control inductance loop; Extra emitter pin, the forth package pin, for driver feedback; Same creepage distance of collector emitter as standard TO-247 package | Benefits: Over 20% total switching loses reduction compared to standard TO-247-3; System efficiency improvement or power density increase compared to standard TO-247-3 | Target Applications: Industrial UPS; Industrial SMPS; Energy Storage; Charger; Welding

IKZ50N65ES5XKSA1 추가 정보

TRENCHSTOP™ 5 IGBTs: Infineon TRENCHSTOP™ 5 IGBTs are the next generation of thin wafer IGBT (Insulated Gate Bipolar Transistor) that feature significantly lower conduction and switching losses compared to currently leading solutions. TRENCHSTOP 5 is designed for applications where switching >10kHz. The wafer thickness has been reduced by >25%, which enables a dramatic improvement in both switching and conduction losses, while providing a breakthrough voltage of 650V. This quantum leap in efficiency opens up new opportunities for designers to explore.

TRENCHSTOP™ 5 S5 Medium Speed Switching IGBTs: Infineon TRENCHSTOP™ 5 S5 Medium Speed Switching IGBTs are the link between the L5 and H5 and address applications switching between 10kHz and 40kHz. The IGBTs deliver high efficiency, faster time to market cycles, circuit design complexity reduction and PCB bill of material cost optimization. The S5 are packed with features to help designers achieve goals without the need to increase circuit complexity.

Market price

부분 #	제조	설명	재고	가격
IKZ50N65ES5XKSA1 DISTI # IKZ50N65ES5XKSA1-ND	Infineon Technologies AG	IGBT TRENCH 650V 80A TO247-4 RoHS: Compliant Min Qty: 1 Container: Tube	234In Stock	2640:$3.2780 720:$4.0811 240:$4.7940 25:$5.5316 10:$5.8510 1:$6.5100
IKZ50N65ES5XKSA1 DISTI # SP001636074	Infineon Technologies AG	IGBT PRODUCTS (Alt: SP001636074) RoHS: Compliant Min Qty: 1	Europe - 240	1000:€2.4900 100:€2.5900 500:€2.5900 50:€2.6900 25:€2.7900 10:€3.0900 1:€3.8900
IKZ50N65ES5XKSA1 DISTI # IKZ50N65ES5XKSA1	Infineon Technologies AG	IGBT PRODUCTS - Rail/Tube (Alt: IKZ50N65ES5XKSA1) RoHS: Compliant Min Qty: 240 Container: Tube	Americas - 0	2400:$2.8900 1440:$2.9900 960:$3.0900 480:$3.1900 240:$3.2900
IKZ50N65ES5XKSA1 DISTI # 24AC9032	Infineon Technologies AG	TRANSISTOR, IGBT, N-CH, 650V, 80A, TO247,DC Collector Current:80A,Collector Emitter Saturation Voltage Vce(on):1.35V,Power Dissipation Pd:274W,Collector Emitter Voltage V(br)ceo:650V,Transistor Case Style:TO-247,No. of RoHS Compliant: Yes	34	500:$3.9000 250:$4.1500 100:$4.6100 50:$4.8400 25:$5.0800 10:$5.3100 1:$6.2500
IKZ50N65ES5XKSA1 DISTI # 726-IKZ50N65ES5XKSA1	Infineon Technologies AG	IGBT Transistors To further enhance the best-in-class performance of the TRENCHSTOP 5 IGBT technology, Infineon offers the technology in a high power package with an extra Kelvin emitter pin. The TO-247 4pin provides ultra-low inductance to the gate-emitter control l RoHS: Compliant	160	1:$6.1900 10:$5.2600 100:$4.5600 250:$4.3300 500:$3.8800
IKZ50N65ES5XKSA1 DISTI # 1623289	Infineon Technologies AG	IGBT 650V 60A TRENCHSTOP5 DIODE TO-247, TU	228	90:£2.1830 30:£2.3170
IKZ50N65ES5XKSA1 DISTI # XSKDRABV0021137	Infineon Technologies AG	RoHS: Compliant	720 in Stock0 on Order	720:$3.8500 240:$4.1300
IKZ50N65ES5XKSA1 DISTI # 2771418	Infineon Technologies AG	TRANSISTOR, IGBT, N-CH, 650V, 80A, TO247 RoHS: Compliant	34	1200:$5.2600 720:$6.2400 240:$7.3300 10:$8.9400 1:$9.9400
IKZ50N65ES5XKSA1 DISTI # 2771418	Infineon Technologies AG	TRANSISTOR, IGBT, N-CH, 650V, 80A, TO247	39	500:£2.8100 250:£3.1400 100:£3.3100 10:£3.8100 1:£4.4900

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유효성

재고:: 160
주문 시:: 2143
수량 입력:

IKZ50N65ES5XKSA1의 현재 가격은 참고용이며 최상의 가격을 원하시면 판매팀 [email protected]으로 문의 또는 다이렉트 이메일을 보내주십시오.

참고 가격(USD)

수량
단가
내선 가격

1: ~~US$6.19~~; ~~US$6.19~~

10: ~~US$5.26~~; ~~US$52.60~~

100: ~~US$4.56~~; ~~US$456.00~~

250: ~~US$4.33~~; ~~US$1 082.50~~

500: ~~US$3.88~~; ~~US$1 940.00~~

2021년부터 반도체 공급 부족으로 인해 아래 가격은 2021년 이전 정상 가격입니다. 확인을 위해 문의를 보내주세요.

시작

IKZ50N65E 3
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IKZ50N65ES5XKSA1

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes