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HGTG30N60C3

HGTG30N60C3
Mfr. #:
HGTG30N60C3
제조사:
Rochester Electronics, LLC
설명:
Insulated Gate Bipolar Transistor, 63A I(C), 600V V(BR)CES, N-Channel, TO-247
수명 주기:
이 제조업체의 새 제품입니다.
데이터 시트:
HGTG30N60C3 데이터 시트
배달:
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지불:
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ECAD Model:
제품 속성
속성 값
Tags
HGTG30N60C, HGTG30N60, HGTG30N6, HGTG30N, HGTG30, HGTG3, HGTG, HGT
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***i-Key Marketplace
63A, 600V, UFS N-CHANNEL IGBT
부분 # 제조 설명 재고 가격
HGTG30N60C3D
DISTI # V36:1790_06359325		ON SemiconductorPWR IGBT UFS 30A 600V W/DIODE436
  • 1000:$4.5290
  • 500:$4.7870
  • 100:$5.0810
  • 10:$6.8130
  • 1:$8.1576
HGTG30N60C3D
DISTI # V99:2348_06359325		ON SemiconductorPWR IGBT UFS 30A 600V W/DIODE426
  • 100:$5.4420
  • 10:$6.8130
  • 1:$8.1576
HGTG30N60C3D
DISTI # HGTG30N60C3D-ND		ON SemiconductorIGBT 600V 63A 208W TO247
RoHS: Compliant
Min Qty: 1
Container: Tube		832In Stock
  • 900:$5.1058
  • 450:$5.5999
  • 25:$6.7528
  • 10:$7.0820
  • 1:$7.8400
HGTG30N60C3D
DISTI # 32706923		ON SemiconductorPWR IGBT UFS 30A 600V W/DIODE574
  • 11:$7.4308
HGTG30N60C3D
DISTI # 32401861		ON SemiconductorPWR IGBT UFS 30A 600V W/DIODE436
  • 2:$8.1576
HGTG30N60C3D
DISTI # 25845335		ON SemiconductorPWR IGBT UFS 30A 600V W/DIODE426
  • 2:$8.1576
HGTG30N60C3D
DISTI # HGTG30N60C3D		ON SemiconductorTrans IGBT Chip N-CH 600V 63A 3-Pin(3+Tab) TO-247 Rail (Alt: HGTG30N60C3D)
RoHS: Compliant
Min Qty: 1		Europe - 220
  • 1000:€2.1900
  • 500:€2.3900
  • 100:€2.4900
  • 50:€2.5900
  • 25:€2.6900
  • 10:€2.7900
  • 1:€2.9900
HGTG30N60C3D
DISTI # HGTG30N60C3D		ON SemiconductorTrans IGBT Chip N-CH 600V 63A 3-Pin(3+Tab) TO-247 Rail - Bulk (Alt: HGTG30N60C3D)
RoHS: Compliant
Min Qty: 55
Container: Bulk		Americas - 0
  • 550:$5.5900
  • 275:$5.6900
  • 165:$5.7900
  • 55:$5.8900
  • 110:$5.8900
HGTG30N60C3D
DISTI # HGTG30N60C3D		ON SemiconductorTrans IGBT Chip N-CH 600V 63A 3-Pin(3+Tab) TO-247 Rail - Rail/Tube (Alt: HGTG30N60C3D)
RoHS: Compliant
Min Qty: 450
Container: Tube		Americas - 0
  • 4500:$4.1900
  • 1800:$4.2900
  • 2700:$4.2900
  • 450:$4.3900
  • 900:$4.3900
HGTG30N60C3D
DISTI # 58K1593		ON SemiconductorTrans IGBT Chip N-CH 600V 63A 3-Pin(3+Tab) TO-247 Rail - Bulk (Alt: 58K1593)
RoHS: Compliant
Min Qty: 1
Container: Bulk		Americas - 0
  • 1:$5.5700
HGTG30N60C3D_NL
DISTI # HGTG30N60C3D_NL		ON Semiconductor- Bulk (Alt: HGTG30N60C3D_NL)
RoHS: Not Compliant
Min Qty: 103
Container: Bulk		Americas - 0
  • 1030:$2.9900
  • 206:$3.0900
  • 309:$3.0900
  • 515:$3.0900
  • 103:$3.1900
HGTG30N60C3D
DISTI # 58K1593		ON SemiconductorIGBT,N CHANNEL,600V,63A,TO-247,DC Collector Current:63A,Collector Emitter Saturation Voltage Vce(on):1.5V,Power Dissipation Pd:208W,Collector Emitter Voltage V(br)ceo:600V,No. of Pins:3Pins,Operating Temperature Max:150°C RoHS Compliant: Yes574
  • 1:$4.8300
HGTG30N60C3D
DISTI # 512-HGTG30N60C3D		ON SemiconductorIGBT Transistors 63a 600V NCh IGBT Hyperfast anti-para
RoHS: Compliant		0
    HGTG30N60C3DFairchild Semiconductor CorporationInsulated Gate Bipolar Transistor, 63A I(C), 600V V(BR)CES, N-Channel, TO-247
    RoHS: Compliant    		9501
    • 1000:$5.9900
    • 500:$6.3000
    • 100:$6.5600
    • 25:$6.8400
    • 1:$7.3700
    HGTG30N60C3D_NLFairchild Semiconductor CorporationInsulated Gate Bipolar Transistor, 63A I(C), 600V V(BR)CES, N-Channel, TO-247
    RoHS: Compliant    		57
    • 1000:$3.2200
    • 500:$3.3900
    • 100:$3.5300
    • 25:$3.6800
    • 1:$3.9700
    HGTG30N60C3Harris SemiconductorInsulated Gate Bipolar Transistor, 63A I(C), 600V V(BR)CES, N-Channel, TO-247
    RoHS: Not Compliant    		1500
    • 1000:$2.2000
    • 500:$2.3100
    • 100:$2.4100
    • 25:$2.5100
    • 1:$2.7000
    HGTG30N60C3DIntersil CorporationIGBT Transistor, TO-247AA54
    • 6:$3.6000
    • 2:$4.8000
    • 1:$7.2000
    HGTG30N60C3HARTING Technology Group 81
      HGTG30N60C3DFairchild Semiconductor Corporation 645
        HGTG30N60C3D
        DISTI # HGTG30N60C3D        		ON SemiconductorTransistor: IGBT,600V,30A,208W,TO247-360
        • 30:$4.9000
        • 10:$5.6400
        • 3:$7.0300
        • 1:$8.1800
        HGTG30N60C3DFairchild Semiconductor Corporation 
        RoHS: Compliant        		2270
          HGTG30N60C3D
          DISTI # XSKDRABS0006134          		ON SEMICONDUCTORTelecomandDatacomConnector,8Contact(s),Female,RightAngle,SolderTerminal,Locking, Jack
          RoHS: Compliant          		360 in Stock0 on Order
          • 360:$5.1900
          • 90:$5.5600
          HGTG30N60C3D
          DISTI # XSKDRABV0037822          		ON SEMICONDUCTOR 
          RoHS: Compliant          		1670 in Stock0 on Order
          • 1670:$3.6300
          • 450:$3.8900
          HGTG30N60C3D
          DISTI # 1838985          		ON SemiconductorIGBT,N CH,600V,63A,TO-247
          RoHS: Compliant          		1035
          • 1350:$6.8000
          • 900:$7.8000
          • 450:$8.5500
          • 10:$10.8200
          • 1:$11.9700
          HGTG30N60C3D
          DISTI # 1838985          		ON SemiconductorIGBT,N CH,600V,63A,TO-2471040
          • 100:£4.4100
          • 50:£4.9600
          • 10:£5.5200
          • 5:£6.1100
          • 1:£6.6600
          영상 부분 # 설명
          HGTG30N60B3D

          Mfr.#: HGTG30N60B3D

          OMO.#: OMO-HGTG30N60B3D

          		 IGBT Transistors 600V IGBT UFS N-Channel
          HGTG30N60A4D

          Mfr.#: HGTG30N60A4D

          OMO.#: OMO-HGTG30N60A4D-ON-SEMICONDUCTOR

          		 IGBT Transistors 600V N-Channel IGBT SMPS Series
          HGTG30N60B3D

          Mfr.#: HGTG30N60B3D

          OMO.#: OMO-HGTG30N60B3D-ON-SEMICONDUCTOR

          		 IGBT 600V 60A 208W TO247
          HGTG30B60A4D

          Mfr.#: HGTG30B60A4D

          OMO.#: OMO-HGTG30B60A4D-1190

          		 신규 및 오리지널
          HGTG30N100

          Mfr.#: HGTG30N100

          OMO.#: OMO-HGTG30N100-1190

          		 신규 및 오리지널
          HGTG30N120CND

          Mfr.#: HGTG30N120CND

          OMO.#: OMO-HGTG30N120CND-1190

          		 신규 및 오리지널
          HGTG30N60

          Mfr.#: HGTG30N60

          OMO.#: OMO-HGTG30N60-1190

          		 신규 및 오리지널
          HGTG30N60A

          Mfr.#: HGTG30N60A

          OMO.#: OMO-HGTG30N60A-1190

          		 신규 및 오리지널
          HGTG30N60C3

          Mfr.#: HGTG30N60C3

          OMO.#: OMO-HGTG30N60C3-1190

          		 Insulated Gate Bipolar Transistor, 63A I(C), 600V V(BR)CES, N-Channel, TO-247
          HGTG34N100E2

          Mfr.#: HGTG34N100E2

          OMO.#: OMO-HGTG34N100E2-1190

          		 Insulated Gate Bipolar Transistor, 55A I(C), 1000V V(BR)CES, N-Channel, TO-247
          유효성
          재고:
          Available
          주문 시:
          5000
          수량 입력:
          HGTG30N60C3의 현재 가격은 참고용이며 최상의 가격을 원하시면 판매팀 [email protected]으로 문의 또는 다이렉트 이메일을 보내주십시오.
          참고 가격(USD)
          수량
          단가
          내선 가격
          1
          US$0.00
          US$0.00
          10
          US$0.00
          US$0.00
          100
          US$0.00
          US$0.00
          500
          US$0.00
          US$0.00
          1000
          US$0.00
          US$0.00
          2021년부터 반도체 공급 부족으로 인해 아래 가격은 2021년 이전 정상 가격입니다. 확인을 위해 문의를 보내주세요.
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