SI9933CDY-T1-E3

Mfr. #:: SI9933CDY-T1-E3
제조사:: Vishay
설명:: IGBT Transistors MOSFET 20V 4.0A 3.1W 58mohm @ 4.5V
수명 주기:: 이 제조업체의 새 제품입니다.
데이터 시트:: SI9933CDY-T1-E3 데이터 시트
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ECAD Model:
추가 정보:: SI9933CDY-T1-E3 추가 정보

제품 속성
속성 값

제조사: 비쉐이 실리콘

제품 카테고리: FET - 어레이

시리즈: 트렌치FETR

포장: Digi-ReelR 대체 패키징

부분 별칭: SI9933CDY-E3

단위 무게: 0.006596 oz

장착 스타일: SMD/SMT

패키지 케이스: 8-SOIC (0.154", 3.90mm Width)

기술: 시

작동 온도: -50°C ~ 150°C (TJ)

장착형: 표면 실장

채널 수: 2 Channel

공급자-장치-패키지: 8-SO

구성: 듀얼

FET형: 2 P-Channel (Dual)

파워맥스: 3.1W

트랜지스터형: 2 P-Channel

드레인-소스 전압 Vdss: 20V

입력-커패시턴스-Ciss-Vds: 665pF @ 10V

FET 기능: 로직 레벨 게이트

Current-Continuous-Drain-Id-25°C: 4A

Rds-On-Max-Id-Vgs: 58 mOhm @ 4.8A, 4.5V

Vgs-th-Max-Id: 1.4V @ 250μA

Gate-Charge-Qg-Vgs: 26nC @ 10V

Pd 전력 손실: 2 W

최대 작동 온도: + 150 C

최소 작동 온도: - 50 C

가을철: 13 ns

상승 시간: 50 ns

Vgs 게이트 소스 전압: 12 V

Id-연속-드레인-전류: 4 A

Vds-드레인-소스-고장-전압: - 20 V

Rds-On-Drain-Source-Resistance: 58 mOhms

트랜지스터 극성: P-채널

일반 꺼짐 지연 시간: 29 ns

일반 켜기 지연 시간: 21 ns

채널 모드: 상승

Tags: SI9933CDY-T, SI9933CD, SI9933C, SI9933, SI993, SI99, SI9

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Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

SI9933CDY-T1-E3 설명

***ure Electronics: Si9933CDY Series Dual P-Channel 20 V 58 mOhm Surface Mount Power Mosfet - SOIC-8

***et: Trans MOSFET Array Dual P-CH -20V -4A 8-Pin SOIC

***nell: MOSFET, PP CH, 20V, 8SOIC; Transistor Polarity:Dual P Channel; Continuous Drain Current Id:-4A; Drain Source Voltage Vds:-20V; On Resistance Rds(on):0.048ohm; Rds(on) Test Voltage Vgs:-4.5V; Threshold Voltage Vgs Typ:-1.4V; Power Dissipation Pd:3.1W; Operating Temperature Min:-50°C; Operating Temperature Max:150°C; Transistor Case Style:SOIC; No. of Pins:8; Operating Temperature Range:-50°C to +150°C

SI9933CDY-T1-E3 추가 정보

Integrated MOSFET Solutions: Vishay Integrated MOSFET Solutions combine components into a single monolithic chip to increase power density, increase efficiency, simplify design, and reduce Bill of Material (BOM) costs. These single- and multi-die MOSFETs integrate features such as Schottky Barrier diodes and ESD protection. These MOSFETs feature low ON-resistance N- and P-channel TrenchFET® technologies and low thermal resistance.

Market price

부분 #	제조	설명	재고	가격
SI9933CDY-T1-E3 DISTI # V72:2272_09216526	Vishay Intertechnologies	Trans MOSFET P-CH 20V 4A 8-Pin SOIC N T/R RoHS: Compliant	227	100:$0.3264 25:$0.4045 10:$0.4093 1:$0.4844
SI9933CDY-T1-E3 DISTI # SI9933CDY-T1-E3CT-ND	Vishay Siliconix	MOSFET 2P-CH 20V 4A 8SOIC RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	3313In Stock	1000:$0.2900 500:$0.3626 100:$0.4895 10:$0.6340 1:$0.7300
SI9933CDY-T1-E3 DISTI # SI9933CDY-T1-E3DKR-ND	Vishay Siliconix	MOSFET 2P-CH 20V 4A 8SOIC RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	3313In Stock	1000:$0.2900 500:$0.3626 100:$0.4895 10:$0.6340 1:$0.7300
SI9933CDY-T1-E3 DISTI # SI9933CDY-T1-E3TR-ND	Vishay Siliconix	MOSFET 2P-CH 20V 4A 8SOIC RoHS: Compliant Min Qty: 2500 Container: Tape & Reel (TR)	2500In Stock	2500:$0.2552
SI9933CDY-T1-E3 DISTI # 25790123	Vishay Intertechnologies	Trans MOSFET P-CH 20V 4A 8-Pin SOIC N T/R RoHS: Compliant	227	100:$0.3264 31:$0.4045
SI9933CDY-T1-E3 DISTI # SI9933CDY-T1-E3	Vishay Intertechnologies	Trans MOSFET P-CH 20V 4A 8-Pin SOIC N T/R - Tape and Reel (Alt: SI9933CDY-T1-E3) RoHS: Not Compliant Min Qty: 2500 Container: Reel	Americas - 0	2500:$0.2319 5000:$0.2249 10000:$0.2159 15000:$0.2099 25000:$0.2049
SI9933CDY-T1-E3 DISTI # SI9933CDY-T1-E3	Vishay Intertechnologies	Trans MOSFET P-CH 20V 4A 8-Pin SOIC N T/R (Alt: SI9933CDY-T1-E3) RoHS: Compliant Min Qty: 2500 Container: Tape and Reel	Asia - 0
SI9933CDY-T1-E3 DISTI # 16P3887	Vishay Intertechnologies	Trans MOSFET Array Dual P-CH -20V -4A 8-Pin SOIC - Product that comes on tape, but is not reeled (Alt: 16P3887) RoHS: Not Compliant Min Qty: 1 Container: Ammo Pack	Americas - 0	1:$0.6400 10:$0.5110 25:$0.4700 50:$0.4290 100:$0.3880 250:$0.3540 500:$0.3200
SI9933CDY-T1-E3 DISTI # 16P3887	Vishay Intertechnologies	DUAL P CHANNEL MOSFET, -20V, SOIC,Transistor Polarity:Dual P Channel,Continuous Drain Current Id:-4A,Drain Source Voltage Vds:-20V,On Resistance Rds(on):0.048ohm,Rds(on) Test Voltage Vgs:12V,Threshold Voltage Vgs:-1.4V RoHS Compliant: Yes	2222	1:$0.6400 10:$0.5110 25:$0.4700 50:$0.4290 100:$0.3880 250:$0.3540 500:$0.3200 1000:$0.2560
SI9933CDY-T1-E3 DISTI # 781-SI9933CDY-E3	Vishay Intertechnologies	MOSFET -20V Vds 12V Vgs SO-8 RoHS: Compliant	3592	1:$0.6400 10:$0.5110 100:$0.3880 500:$0.3200 1000:$0.2560 2500:$0.2320
SI9933CDY-T1-E3 DISTI # C1S803603830148	Vishay Intertechnologies	MOSFETs RoHS: Compliant	227	100:$0.3264 25:$0.4045 10:$0.4093
SI9933CDY-T1-E3 DISTI # 2101482	Vishay Intertechnologies	MOSFET, PP CH, 20V, 8SOIC RoHS: Compliant	1894	1:$1.0200 10:$0.8090 100:$0.6150 500:$0.5070 1000:$0.4250
SI9933CDY-T1-E3 DISTI # 2101482	Vishay Intertechnologies	MOSFET, PP CH, 20V, 8SOIC RoHS: Compliant	1840	5:£0.4410 25:£0.2690 100:£0.2670 250:£0.2550 500:£0.2110

영상	부분 #	설명
	Mfr.#: SI9933CDY-T1-GE3 OMO.#: OMO-SI9933CDY-T1-GE3	MOSFET -20V Vds 12V Vgs SO-8
	Mfr.#: SI9933CDY-T1-E3 OMO.#: OMO-SI9933CDY-T1-E3	MOSFET -20V Vds 12V Vgs SO-8
	Mfr.#: SI9933CDY-T1-E3 OMO.#: OMO-SI9933CDY-T1-E3-VISHAY	IGBT Transistors MOSFET 20V 4.0A 3.1W 58mohm @ 4.5V
	Mfr.#: SI9933CDY-T1-GE3-CUT TAPE OMO.#: OMO-SI9933CDY-T1-GE3-CUT-TAPE-1190	신규 및 오리지널
	Mfr.#: SI9933C OMO.#: OMO-SI9933C-1190	신규 및 오리지널
	Mfr.#: SI9933CDY OMO.#: OMO-SI9933CDY-1190	신규 및 오리지널
	Mfr.#: SI9933CDY-T1 OMO.#: OMO-SI9933CDY-T1-1190	신규 및 오리지널
	Mfr.#: SI9933CDY-T1-GE3 OMO.#: OMO-SI9933CDY-T1-GE3-VISHAY	MOSFET 2P-CH 20V 4A 8-SOIC
	Mfr.#: SI9933CY-T1 OMO.#: OMO-SI9933CY-T1-1190	신규 및 오리지널

SI9933CDY-T1-E3

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes