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| 부분 # | 제조 | 설명 | 재고 | 가격 |
|---|---|---|---|---|
| RF1S9530 | Harris Semiconductor | Power Field-Effect Transistor, 12A I(D), 100V, 0.3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA RoHS: Not Compliant | 5418 |
|
| 영상 | 부분 # | 설명 |
|---|---|---|
|
Mfr.#: RF1S01 OMO.#: OMO-RF1S01-1190 |
신규 및 오리지널 |
|
Mfr.#: RF1S15N06 OMO.#: OMO-RF1S15N06-1190 |
Power Field-Effect Transistor, 15A I(D), 60V, 0.14ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB |
|
Mfr.#: RF1S25N06SMR4643 OMO.#: OMO-RF1S25N06SMR4643-1190 |
신규 및 오리지널 |
|
Mfr.#: RF1S40N10LESM OMO.#: OMO-RF1S40N10LESM-1190 |
신규 및 오리지널 |
|
Mfr.#: RF1S45N03LSM OMO.#: OMO-RF1S45N03LSM-1190 |
45 A, 30 V, 0.022 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB |
|
Mfr.#: RF1S45N03LSNM9A OMO.#: OMO-RF1S45N03LSNM9A-1190 |
신규 및 오리지널 |
|
Mfr.#: RF1S540S OMO.#: OMO-RF1S540S-1190 |
신규 및 오리지널 |
|
Mfr.#: RF1S630 OMO.#: OMO-RF1S630-1190 |
Power Field-Effect Transistor, 9A I(D), 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB |
|
Mfr.#: RF1S640SM9A_NL OMO.#: OMO-RF1S640SM9A-NL-1190 |
신규 및 오리지널 |
|
Mfr.#: RF1S70N06SM9A OMO.#: OMO-RF1S70N06SM9A-1190 |
MOSFET TO-263 |