CGHV1F025S

Mfr. #:: CGHV1F025S
제조사:: N/A
설명:: RF JFET Transistors GaN HEMT DC-15GHz, 25 Watt
수명 주기:: 이 제조업체의 새 제품입니다.
데이터 시트:: CGHV1F025S 데이터 시트
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ECAD Model:
추가 정보:: CGHV1F025S 추가 정보

제품 속성
속성 값

제조사:: 스카이웍스

제품 카테고리:: RF JFET 트랜지스터

RoHS:: Y

트랜지스터 유형:: pHEMT

기술:: GaAs

트랜지스터 극성:: N-채널

최소 작동 온도:: - 40 C

최대 작동 온도:: + 85 C

장착 스타일:: SMD/SMT

패키지/케이스:: SC-70-4

포장:: 릴

상표:: 스카이웍스 솔루션 주식회사

NF - 노이즈 피겨:: 0.4 dB

P1dB - 압축점:: 10.5 dBm

상품 유형:: RF JFET 트랜지스터

공장 팩 수량:: 3000

하위 카테고리:: 트랜지스터

Tags: CGHV1F, CGHV1, CGHV, CGH

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

CGHV1F025S 설명

***i-Key: RF MOSFET HEMT 40V 12DFN

***hardson RFPD: RF POWER TRANSISTOR

CGHV1F025S 추가 정보

GaN HEMTs: Cree GaN (Gallium Nitride) HEMTs (High Electron Mobility Transistors) offers greater power density and wider bandwidths compared to Si and GaAs transistors. GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity, and higher thermal conductivity.

X-Band GaN HEMTs & MMICs: Wolfspeed/Cree X-Band GaN HEMTs & MMICs wide bandgap increases the breakdown field by five times and the power density by a factor of 10 to 20 compared with GaAs-based devices. Cree GaN components are smaller and have a lower capacitance for the same operating power. This means that amplifiers can operate over a wider bandwidth while exhibiting good input and output matching. X-band power amplifiers are moving away from inefficient GaAs pHEMTs and unreliable Traveling Wave Tubes due to the significant advantages of GaN HEMTs and MMICs.Learn More

Market price

부분 #	제조	설명	재고	가격
CGHV1F025S-AMP1 DISTI # CGHV1F025S-AMP1-ND	Wolfspeed	DEMO HEMT TRANS AMP1 CGHV1F025S RoHS: Compliant Min Qty: 1 Container: Bulk	1In Stock	1:$637.4400
CGHV1F025S DISTI # CGHV1F025STR-ND	Wolfspeed	RF MOSFET HEMT 40V 12DFN RoHS: Compliant Min Qty: 250 Container: Tape & Reel (TR)	Temporarily Out of Stock	250:$87.4405
CGHV1F025S DISTI # CGHV1F025SCT-ND	Wolfspeed	RF MOSFET HEMT 40V 12DFN RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	Temporarily Out of Stock	100:$96.1846 1:$97.9300
CGHV1F025S DISTI # CGHV1F025SDKR-ND	Wolfspeed	RF MOSFET HEMT 40V 12DFN RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	Temporarily Out of Stock	100:$96.1846 1:$97.9300
CGHV1F025S DISTI # 941-CGHV1F025S	Cree, Inc.	RF JFET Transistors GaN HEMT DC-15GHz, 25 Watt RoHS: Compliant	0	1:$87.4400
CGHV1F025S-AMP1 DISTI # 941-CGHV1F025S-AMP1	Cree, Inc.	RF Development Tools Test Board with GaN HEMT RoHS: Compliant	1	1:$637.4400

관련 상품

영상	부분 #	설명
	Mfr.#: CG2H40010F OMO.#: OMO-CG2H40010F	RF JFET Transistors GaN HEMT DC-8.0GHz, 10 Watt
	Mfr.#: CG2H40025F OMO.#: OMO-CG2H40025F	RF JFET Transistors GaN HEMT DC-6.0GHz, 25 Watt
	Mfr.#: CGHV1F006S OMO.#: OMO-CGHV1F006S	RF JFET Transistors GaN HEMT DC-18GHz, 6 Watt
	Mfr.#: CGHV40030F OMO.#: OMO-CGHV40030F	RF JFET Transistors GaN HEMT DC-6.0GHz, 30 Watt
	Mfr.#: CG2H40010F OMO.#: OMO-CG2H40010F-WOLFSPEED	RF MOSFET HEMT 28V 440166
	Mfr.#: CG2H40025F OMO.#: OMO-CG2H40025F-WOLFSPEED	RF MOSFET HEMT 28V 440166
	Mfr.#: CGHV1F006S OMO.#: OMO-CGHV1F006S-WOLFSPEED	RF MOSFET HEMT 40V 12DFN
	Mfr.#: CGHV40030F OMO.#: OMO-CGHV40030F-WOLFSPEED	RF MOSFET HEMT 50V 440166