OMO ElectronicOMO Electronic
Expand menu
안녕하세요, 로그인내 계정
0 카트

IPD60R750E6ATMA1

IPD60R750E6ATMA1
Mfr. #:
IPD60R750E6ATMA1
제조사:
Infineon Technologies
설명:
RF Bipolar Transistors MOSFET N-Ch 650V 5.7A DPAK-2
수명 주기:
이 제조업체의 새 제품입니다.
데이터 시트:
IPD60R750E6ATMA1 데이터 시트
배달:
DHL FedEx Ups TNT EMS
지불:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
제품 속성
속성 값
제조사
인피니언 테크놀로지스
제품 카테고리
트랜지스터 - FET, MOSFET - 단일
포장
릴
부분 별칭
IPD60R750E6 SP001117728
상표명
쿨모스
패키지 케이스
TO-252-3
기술
시
채널 수
1 Channel
트랜지스터형
1 N-Channel
Vds-드레인-소스-고장-전압
600 V
트랜지스터 극성
N-채널
Tags
IPD60R7, IPD60R, IPD60, IPD6, IPD
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans MOSFET N-CH 600V 5.7A 3-Pin(2+Tab) DPAK T/R
***ineon SCT
CoolMOS™ E6 combines Infineon's experience as the leading superjunction MOSFET supplier with best-in-class innovation, PG-TO252-3, RoHS
***ineon
CoolMOS E6 combines Infineon's experience as the leading superjunction MOSFET supplier with best-in-class innovation. The offered devices provide all benefits of a fast switching SJ MOSFET while not sacrificing ease-of-use. Extremely low switching and conduction losses make switching applications even more efficient, compact, lighter and cooler. | Summary of Features: Easy control of switching behavior; Very high commutation ruggedness; Extremely low losses due to very low Figure of Merit (R DS(ON)*Q g) and E oss); Easy to use; Better light load efficiency compared to C3; Outstanding reliability with proven CoolMOS quality combined with high body diode ruggedness; Better price performance in comparison to previous CoolMOS generations; More efficient, more compact, lighter and cooler | Benefits: Improved power density; Improved reliability; General purpose part can be used in both soft and hard switching topologies; Better light load effciency; Improved effciency in hard switching applications; Improved ease-of-use; Reduces possible ringing due to pcb layout and package parasitic effects | Target Applications: Consumer; Adapter; eMobility; PFC stages for server & telecom; SMPS; PC power; Solar; Lighting
부분 # 제조 설명 재고 가격
IPD60R750E6ATMA1
DISTI # V72:2272_06384542		Infineon Technologies AGTrans MOSFET N-CH 600V 5.7A 3-Pin(2+Tab) DPAK T/R
RoHS: Compliant		294
  • 75000:$0.5069
  • 30000:$0.5118
  • 15000:$0.5167
  • 6000:$0.5215
  • 3000:$0.5264
  • 1000:$0.5294
  • 500:$0.6727
  • 250:$0.7503
  • 100:$0.7808
  • 50:$0.9464
  • 25:$0.9960
  • 10:$1.0511
  • 1:$1.3558
IPD60R750E6ATMA1
DISTI # IPD60R750E6ATMA1-ND		Infineon Technologies AGMOSFET N-CH 600V 5.7A TO252
RoHS: Compliant
Min Qty: 2500
Container: Tape & Reel (TR)		Limited Supply - Call
    IPD60R750E6ATMA1
    DISTI # 26195490    		Infineon Technologies AGTrans MOSFET N-CH 600V 5.7A 3-Pin(2+Tab) DPAK T/R
    RoHS: Compliant    		294
    • 15000:$0.5487
    • 6000:$0.5573
    • 3000:$0.5659
    • 1000:$0.5691
    • 500:$0.7232
    • 250:$0.8066
    • 100:$0.8394
    • 50:$1.0174
    • 25:$1.0707
    • 13:$1.1299
    IPD60R750E6ATMA1
    DISTI # 22AC4485    		Infineon Technologies AGMOSFET, N-CH, 5.7A, 600V, TO-252,Transistor Polarity:N Channel,Continuous Drain Current Id:5.7A,Drain Source Voltage Vds:600V,On Resistance Rds(on):0.68ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3V,Power RoHS Compliant: Yes1607
    • 1000:$0.5730
    • 500:$0.7250
    • 250:$0.7730
    • 100:$0.8210
    • 50:$0.9040
    • 25:$0.9870
    • 10:$1.0700
    • 1:$1.2500
    IPD60R750E6ATMA1
    DISTI # 726-IPD60R750E6ATMA1    		Infineon Technologies AGMOSFET N-Ch 650V 5.7A DPAK-2
    RoHS: Compliant    		903
    • 1:$1.2400
    • 10:$1.0600
    • 100:$0.8130
    • 500:$0.7180
    • 1000:$0.5670
    • 2500:$0.5030
    • 10000:$0.4840
    IPD60R750E6ATMA1
    DISTI # 2764859    		Infineon Technologies AGMOSFET, N-CH, 5.7A, 600V, TO-252
    RoHS: Compliant    		1607
    • 100:$1.1700
    • 25:$1.4300
    • 5:$1.6400
    IPD60R750E6ATMA1
    DISTI # 2764859    		Infineon Technologies AGMOSFET, N-CH, 5.7A, 600V, TO-2521840
    • 500:£0.5640
    • 250:£0.6020
    • 100:£0.6390
    • 25:£0.8330
    • 5:£0.9250
    영상 부분 # 설명
    IPD60R750E6 6R750E6

    Mfr.#: IPD60R750E6 6R750E6

    OMO.#: OMO-IPD60R750E6-6R750E6-1190

    		 신규 및 오리지널
    IPD60R750E6BTMA1

    Mfr.#: IPD60R750E6BTMA1

    OMO.#: OMO-IPD60R750E6BTMA1-INFINEON-TECHNOLOGIES

    		 MOSFET N-CH 600V 5.7A TO252
    IPD60R750E6

    Mfr.#: IPD60R750E6

    OMO.#: OMO-IPD60R750E6-126

    		 IGBT Transistors MOSFET N-Ch 650V 5.7A DPAK-2 CoolMOS E6
    IPD60R750E6ATMA1

    Mfr.#: IPD60R750E6ATMA1

    OMO.#: OMO-IPD60R750E6ATMA1-INFINEON-TECHNOLOGIES

    		 RF Bipolar Transistors MOSFET N-Ch 650V 5.7A DPAK-2
    유효성
    재고:
    Available
    주문 시:
    5500
    수량 입력:
    IPD60R750E6ATMA1의 현재 가격은 참고용이며 최상의 가격을 원하시면 판매팀 [email protected]으로 문의 또는 다이렉트 이메일을 보내주십시오.
    참고 가격(USD)
    수량
    단가
    내선 가격
    1
    US$0.73
    US$0.73
    10
    US$0.69
    US$6.90
    100
    US$0.65
    US$65.34
    500
    US$0.62
    US$308.55
    1000
    US$0.58
    US$580.80
    2021년부터 반도체 공급 부족으로 인해 아래 가격은 2021년 이전 정상 가격입니다. 확인을 위해 문의를 보내주세요.
    시작
    최신 제품
    More Newest Products
    Top