FQI4N90TU

FQI4N90TU
Mfr. #:
FQI4N90TU
제조사:
ON Semiconductor / Fairchild
설명:
MOSFET 900V N-Channel QFET
수명 주기:
이 제조업체의 새 제품입니다.
데이터 시트:
FQI4N90TU 데이터 시트
배달:
DHL FedEx Ups TNT EMS
지불:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
제품 속성
속성 값
제조사:
온세미컨덕터
제품 카테고리:
MOSFET
RoHS:
E
기술:
장착 스타일:
구멍을 통해
패키지/케이스:
TO-262-3
채널 수:
1 Channel
트랜지스터 극성:
N-채널
Vds - 드레인 소스 항복 전압:
900 V
Id - 연속 드레인 전류:
4.2 A
Rds On - 드레인 소스 저항:
3.3 Ohms
Vgs - 게이트 소스 전압:
30 V
최소 작동 온도:
- 55 C
최대 작동 온도:
+ 150 C
Pd - 전력 손실:
3.13 W
구성:
하나의
채널 모드:
상승
포장:
튜브
키:
7.88 mm
길이:
10.29 mm
시리즈:
FQI4N90
트랜지스터 유형:
1 N-Channel
유형:
MOSFET
너비:
4.83 mm
상표:
온세미컨덕터 / 페어차일드
순방향 트랜스컨덕턴스 - 최소:
3.5 S
가을 시간:
40 ns
상품 유형:
MOSFET
상승 시간:
70 ns
공장 팩 수량:
1000
하위 카테고리:
MOSFET
일반적인 끄기 지연 시간:
45 ns
일반적인 켜기 지연 시간:
25 ns
부품 번호 별칭:
FQI4N90TU_NL
단위 무게:
0.073511 oz
Tags
FQI4N, FQI4, FQI
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ark
Transistor,mosfet,n-Channel,900V V(Br)Dss,4.2A I(D),to-262Aa Rohs Compliant: Yes
***emi
N-Channel Power MOSFET, QFET®, 900 V, 4.2 A, 3.3 Ω, I2PAK
***r Electronics
Power Field-Effect Transistor, 4.2A I(D), 900V, 3.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA
***rchild Semiconductor
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.
***el Electronic
Trans MOSFET N-CH 800V 4.8A 3-Pin(3+Tab) I2PAK Rail
***i-Key
MOSFET N-CH 800V 4.8A I2PAK
*** Electronics
N-CHANNEL POWER MOSFET
***ser
MOSFETs 800V N-Channel QFET
***emi
N-Channel Power MOSFET, QFET®, 800 V, 3.9 A, 3.6 Ω, I2PAK
***r Electronics
Power Field-Effect Transistor, 3.9A I(D), 800V, 3.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA
***nell
MOSFET, N, TO-262; Transistor type:Enhancement; Voltage, Vds typ:800V; Current, Id cont:3.9A; Resistance, Rds on:3.6ohm; Voltage, Vgs Rds on measurement:10V; Voltage, Vgs th typ:5V; Case style:TO-262; Current, Idm pulse:15.6A; Pins, No. of:3; Power dissipation:3.13W; Termination Type:Through Hole; Transistor polarity:N; Voltage, Vds max:800V; Voltage, Vgs th max:5V
***rchild Semiconductor
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.
***i-Key
MOSFET N-CH 800V 3A I2PAK
*** Services
CoC and 2-years warranty / RFQ for pricing
***el Electronic
IC SUPERVISOR 1 CHANNEL 3SSOP
***i-Key Marketplace
N-CHANNEL POWER MOSFET
***ser
MOSFETs 800V N-Channel QFET
***icroelectronics
N-channel 800 V, 1.5 Ohm typ., 5.2 A Zener-protected SuperMESH Power MOSFET in an I2PAK package
***et
Trans MOSFET N-CH 800V 5.2A 3-Pin(3+Tab) I2PAK Tube
***ponent Stockers USA
5.2 A 800 V 1.8 ohm N-CHANNEL Si POWER MOSFET TO-262AA
*** Electronic Components
MOSFET N-Ch, 800V-1.5ohms Zener SuperMESH 5.2A
***r Electronics
Power Field-Effect Transistor, 5.2A I(D), 800V, 1.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA
***icroelectronics SCT
Power MOSFETs, 800V, 5.2A, I2PAK, Tube
***icroelectronics
N-channel 800 V, 1.3 Ohm typ., 4.5 A MDmesh K5 Power MOSFET in I2PAKFP package
***r Electronics
Power Field-Effect Transistor, 4.5A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET
***ical
Trans MOSFET N-CH 800V 4.5A 3-Pin(3+Tab) I2PAKFP Tube
***el Electronic
IC MODULATR D-S CUR-SHNT 16-QFN
***ure Electronics
Single N-Channel 800 V 3 Ohms Surface Mount Power Mosfet - TO-262
***ical
Trans MOSFET N-CH 800V 4.1A 3-Pin(3+Tab) TO-262
***id Electronics
VISHAY SEMICONDUCTOR IRFBE30LPBF
부분 # 제조 설명 재고 가격
FQI4N90TU
DISTI # FQI4N90TU-ND
ON SemiconductorMOSFET N-CH 900V 4.2A I2PAK
RoHS: Compliant
Min Qty: 1000
Container: Tube
Temporarily Out of Stock
  • 1000:$1.2447
FQI4N90TU
DISTI # FQI4N90TU
ON SemiconductorTrans MOSFET N-CH 900V 4.2A 3-Pin(3+Tab) I2PAK Rail (Alt: FQI4N90TU)
RoHS: Compliant
Min Qty: 1
Europe - 0
  • 1:€1.2029
  • 10:€1.0939
  • 25:€1.0029
  • 50:€0.9629
  • 100:€0.9259
  • 500:€0.8909
  • 1000:€0.8589
FQI4N90TU
DISTI # FQI4N90TU
ON SemiconductorTrans MOSFET N-CH 900V 4.2A 3-Pin(3+Tab) I2PAK Rail - Rail/Tube (Alt: FQI4N90TU)
RoHS: Compliant
Min Qty: 1000
Container: Tube
Americas - 0
  • 1000:$0.8869
  • 2000:$0.8809
  • 4000:$0.8699
  • 6000:$0.8579
  • 10000:$0.8369
FQI4N90TU
DISTI # 82C4156
ON SemiconductorTRANSISTOR,MOSFET,N-CHANNEL,900V V(BR)DSS,4.2A I(D),TO-262AA ROHS COMPLIANT: YES0
  • 5000:$1.0200
  • 2500:$1.0500
  • 1000:$1.3000
  • 500:$1.4500
  • 100:$1.5600
  • 10:$1.9500
  • 1:$2.2900
FQI4N90TUON Semiconductor 
RoHS: Not Compliant
9000
  • 1000:$1.6200
  • 500:$1.7000
  • 100:$1.7700
  • 25:$1.8500
  • 1:$1.9900
FQI4N90TUFairchild Semiconductor Corporation 
RoHS: Not Compliant
842
  • 1000:$1.6200
  • 500:$1.7000
  • 100:$1.7700
  • 25:$1.8500
  • 1:$1.9900
FQI4N90TU
DISTI # 512-FQI4N90TU
ON SemiconductorMOSFET 900V N-Channel QFET
RoHS: Compliant
287
  • 1:$2.5000
  • 10:$2.1300
  • 100:$1.7000
  • 500:$1.4900
  • 1000:$1.2400
  • 2500:$1.1500
  • 5000:$1.1100
영상 부분 # 설명
SMBJ33CA

Mfr.#: SMBJ33CA

OMO.#: OMO-SMBJ33CA

TVS Diodes / ESD Suppressors 1-Line 33V 11.3A TVS
SMCJ350A

Mfr.#: SMCJ350A

OMO.#: OMO-SMCJ350A

TVS Diodes / ESD Suppressors 1.5kW 350V 5% Uni-Directional
TL431IDBVR

Mfr.#: TL431IDBVR

OMO.#: OMO-TL431IDBVR

Voltage References Adj Shunt
LM2675M-5.0/NOPB

Mfr.#: LM2675M-5.0/NOPB

OMO.#: OMO-LM2675M-5-0-NOPB

Switching Voltage Regulators HIGH EFF 1A STEP- DOWN VLTG REG
08055C104KAT2A

Mfr.#: 08055C104KAT2A

OMO.#: OMO-08055C104KAT2A

Multilayer Ceramic Capacitors MLCC - SMD/SMT 50V .1uF X7R 0805 10%TOL
TAJD106K035RNJ

Mfr.#: TAJD106K035RNJ

OMO.#: OMO-TAJD106K035RNJ

Tantalum Capacitors - Solid SMD 35volts 10uF 10%
SMCJ350A

Mfr.#: SMCJ350A

OMO.#: OMO-SMCJ350A-LITTELFUSE

TVS Diodes - Transient Voltage Suppressors 350Vr 1500W 2.6A 5% UniDirectional
SMBJ33CA

Mfr.#: SMBJ33CA

OMO.#: OMO-SMBJ33CA-LITTELFUSE

TVS Diodes - Transient Voltage Suppressors 33Vr 600W 11.3A 5% BiDirectional
06035A101JAT4A

Mfr.#: 06035A101JAT4A

OMO.#: OMO-06035A101JAT4A-AVX

Multilayer Ceramic Capacitors MLCC - SMD/SMT 50volts 100pF 5% C0G
B82476A1473M000

Mfr.#: B82476A1473M000

OMO.#: OMO-B82476A1473M000-EPCOS

Inductor Power Unshielded Wirewound 47uH 20% 100KHz Ferrite 1.8A 120mOhm DCR Automotive Blister T/R
유효성
재고:
287
주문 시:
2270
수량 입력:
FQI4N90TU의 현재 가격은 참고용이며 최상의 가격을 원하시면 판매팀 [email protected]으로 문의 또는 다이렉트 이메일을 보내주십시오.
참고 가격(USD)
수량
단가
내선 가격
1
US$1.98
US$1.98
10
US$1.68
US$16.80
100
US$1.35
US$135.00
500
US$1.18
US$590.00
1000
US$0.98
US$978.00
2000
US$0.91
US$1 822.00
5000
US$0.88
US$4 385.00
10000
US$0.84
US$8 440.00
시작
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