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| 부분 # | 제조 | 설명 | 재고 | 가격 |
|---|---|---|---|---|
| BSZ120P03NS3EGATMA1 DISTI # V72:2272_06384848 | Infineon Technologies AG | Trans MOSFET P-CH 30V 40A 8-Pin TSDSON EP T/R RoHS: Compliant | 905 |
|
| BSZ120P03NS3EGATMA1 DISTI # V36:1790_06384848 | Infineon Technologies AG | Trans MOSFET P-CH 30V 40A 8-Pin TSDSON EP T/R RoHS: Compliant | 0 | |
| BSZ120P03NS3EGATMA1 DISTI # BSZ120P03NS3EGATMA1TR-ND | Infineon Technologies AG | MOSFET P-CH 30V 40A TSDSON-8 RoHS: Compliant Min Qty: 5000 Container: Tape & Reel (TR) | Temporarily Out of Stock |
|
| BSZ120P03NS3EGATMA1 DISTI # 32825692 | Infineon Technologies AG | Trans MOSFET P-CH 30V 40A 8-Pin TSDSON EP T/R RoHS: Compliant | 5000 |
|
| BSZ120P03NS3EGATMA1 DISTI # 31955319 | Infineon Technologies AG | Trans MOSFET P-CH 30V 40A 8-Pin TSDSON EP T/R RoHS: Compliant | 905 |
|
| BSZ120P03NS3EGATMA1 DISTI # BSZ120P03NS3EGATMA1 | Infineon Technologies AG | Trans MOSFET P-CH 30V 40A 8-Pin TSDSON EP - Tape and Reel (Alt: BSZ120P03NS3EGATMA1) RoHS: Compliant Min Qty: 5000 Container: Reel | Americas - 0 |
|
| BSZ120P03NS3EGATMA1 DISTI # SP000709730 | Infineon Technologies AG | Trans MOSFET P-CH 30V 40A 8-Pin TSDSON EP (Alt: SP000709730) RoHS: Compliant Min Qty: 5000 | Europe - 0 |
|
| BSZ120P03NS3EGATMA1. DISTI # 31AC8239 | Infineon Technologies AG | Transistor Polarity:P Channel,Continuous Drain Current Id:-40A,Drain Source Voltage Vds:-30V,On Resistance Rds(on):0.009ohm,Rds(on) Test Voltage Vgs:-10V,Threshold Voltage Vgs:-2.5V,Power Dissipation Pd:52W,No. of Pins:8Pins | 0 |
|
| BSZ120P03NS3EGATMA1 DISTI # 49AC0114 | Infineon Technologies AG | MOSFET, P-CH, -30V, -40A, TSDSON-8,Transistor Polarity:P Channel,Continuous Drain Current Id:-40A,Drain Source Voltage Vds:-30V,On Resistance Rds(on):0.009ohm,Rds(on) Test Voltage Vgs:-10V,Threshold Voltage Vgs:-2.5V,Power RoHS Compliant: Yes | 3240 |
|
| BSZ120P03NS3E G DISTI # 726-BSZ120P03NS3EG | Infineon Technologies AG | MOSFET P-Ch -30V -40A TSDSON-8 OptiMOS P3 RoHS: Compliant | 0 |
|
| BSZ120P03NS3EGATMA1 DISTI # 726-BSZ120P03NS3EGAT | Infineon Technologies AG | MOSFET P-Ch -30V -40A TSDSON-8 OptiMOS P3 RoHS: Compliant | 0 |
|
| BSZ120P03NS3EG | Infineon Technologies AG | 109 | ||
| BSZ120P03NS3EGATMA1 DISTI # 2839439 | Infineon Technologies AG | MOSFET, P-CH, -30V, -40A, TSDSON-8 RoHS: Compliant | 3480 |
|
| BSZ120P03NS3EGATMA1 DISTI # 2839439 | Infineon Technologies AG | MOSFET, P-CH, -30V, -40A, TSDSON-8 RoHS: Compliant | 3240 |
|
| BSZ120P03NS3EG | Infineon Technologies AG | -30V,-40A,P-channel power MOSFET | 100 |
|
| 영상 | 부분 # | 설명 |
|---|---|---|
|
Mfr.#: BSZ120P03NS3GATMA1 OMO.#: OMO-BSZ120P03NS3GATMA1 |
MOSFET P-Ch -30V -40A TSDSON-8 OptiMOS P3 |
|
|
Mfr.#: BSZ120P03NS3 G OMO.#: OMO-BSZ120P03NS3-G |
MOSFET P-Ch -30V -40A TSDSON-8 OptiMOS P3 |
|
|
Mfr.#: BSZ120P03NS3E G OMO.#: OMO-BSZ120P03NS3E-G |
MOSFET P-Ch -30V -40A TSDSON-8 OptiMOS P3 |
|
|
Mfr.#: BSZ120P03NS3EGATMA1 OMO.#: OMO-BSZ120P03NS3EGATMA1 |
MOSFET P-Ch -30V -40A TSDSON-8 OptiMOS P3 |
|
Mfr.#: BSZ120P03NS3 G OMO.#: OMO-BSZ120P03NS3-G-1190 |
Trans MOSFET P-CH 30V 40A 8-Pin TSDSON T/R (Alt: BSZ120P03NS3 G) |
|
|
Mfr.#: BSZ120P03NS3EG OMO.#: OMO-BSZ120P03NS3EG-1190 |
-30V,-40A,P-channel power MOSFET |
|
|
Mfr.#: BSZ120P03NS3G OMO.#: OMO-BSZ120P03NS3G-1190 |
신규 및 오리지널 |
|
Mfr.#: BSZ120P03NS3GATMA1 |
MOSFET P-CH 30V 40A TSDSON-8 |
|
|
Mfr.#: BSZ120P03NS3GATMA1-CUT TAPE |
신규 및 오리지널 |
|
|
Mfr.#: BSZ120P03NS3EGATMA1 |
MOSFET P-CH 30V 40A TSDSON-8 |
