IPP60R330P6XKSA1

IPP60R330P6XKSA1
Mfr. #:
IPP60R330P6XKSA1
제조사:
Infineon Technologies
설명:
MOSFET N-CH 600V 12A TO220-3
수명 주기:
이 제조업체의 새 제품입니다.
데이터 시트:
IPP60R330P6XKSA1 데이터 시트
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ECAD Model:
제품 속성
속성 값
Tags
IPP60R3, IPP60R, IPP60, IPP6, IPP
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
N-Channel 600 V 12 A 330 mO 22 nC CoolMOS P6 Power Transistor - TO-220
***ical
Trans MOSFET N-CH 600V 12A 3-Pin(3+Tab) TO-220 Tube
***et
Trans MOSFET N-CH 600(Min)V 12A 3-Pin TO-220 Tube
***i-Key
MOSFET N-CH 600V 12A TO220-3
***ark
Mosfet, N-Ch, 600V, 12A, To-220; Transistor Polarity:n Channel; Continuous Drain Current Id:12A; Drain Source Voltage Vds:600V; On Resistance Rds(On):0.297Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power Dissipationrohs Compliant: Yes
***ment14 APAC
Prices include import duty and tax. MOSFET, N-CH, 600V, 12A, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:12A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.297ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power Dissipation Pd:93W; Transistor Case Style:TO-220; No. of Pins:3Pins; Operating Temperature Max:150°C; Product Range:CoolMOS P6 Series; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018)
***nell
MOSFET, CA-N, 600V, 12A, TO-220; Polarità Transistor:Canale N; Corrente Continua di Drain Id:12A; Tensione Drain Source Vds:600V; Resistenza di Attivazione Rds(on):0.297ohm; Tensione Vgs di Misura Rds(on):10V; Tensione di Soglia Vgs:4V; Dissipazione di Potenza Pd:93W; Modello Case Transistor:TO-220; No. di Pin:3Pin; Temperatura di Esercizio Max:150°C; Gamma Prodotti:CoolMOS P6 Series; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):MSL 1 - Non Limitata; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (27-Jun-2018)
***ineon
Infineons CoolMOS P6 product family is designed to enable higher system efficiency whilst being easy to design in. CoolMOS P6 closes the gap between technologies which focus on delivering ultimate performance and those which concentrate more on ease-of-use. | Summary of Features: Reduced gate charge (Q g); Higher V th; Good body diode ruggedness; Optimized integrated R g; Improved dv/dt from 50V/ns; CoolMOS quality with over 12 years manufacturing experience in superjunction technology | Benefits: Improved effciency especially in light load condition; Better efficiency in soft switching applications due to earlier turn-off; Suitable for hard- & soft-switching topologies; Optimized balance of efficiency and ease of use and good controllability of switching behavior; High robustness and better efficiency; Outstanding quality & reliability | Target Applications: PFC stages for server, telecom rectifier, PC silverbox, gaming consoles; PWM stages (TTF, LLC) for server, telecom rectifier, PC silverbox, gaming consoles
부분 # 제조 설명 재고 가격
IPP60R330P6XKSA1
DISTI # IPP60R330P6XKSA1-ND
Infineon Technologies AGMOSFET N-CH 600V 12A TO220-3
RoHS: Compliant
Min Qty: 500
Container: Tube
Limited Supply - Call
    IPP60R330P6XKSA1
    DISTI # 726-IPP60R330P6XKSA1
    Infineon Technologies AGMOSFET LOW POWER_LEGACY
    RoHS: Compliant
    0
      IPP60R330P6
      DISTI # 726-IPP60R330P6
      Infineon Technologies AGMOSFET LOW POWER_LEGACY
      RoHS: Compliant
      0
        IPP60R330P6XKSA1
        DISTI # 2781181
        Infineon Technologies AGMOSFET, N-CH, 600V, 12A, TO-220
        RoHS: Compliant
        0
        • 100:$2.0100
        • 25:$2.4500
        • 5:$2.8200
        IPP60R330P6XKSA1
        DISTI # 2781181
        Infineon Technologies AGMOSFET, N-CH, 600V, 12A, TO-2200
        • 500:£0.9100
        • 250:£0.9760
        • 100:£1.0400
        • 10:£1.3700
        • 1:£1.7300
        영상 부분 # 설명
        IPP60R330P6XKSA1

        Mfr.#: IPP60R330P6XKSA1

        OMO.#: OMO-IPP60R330P6XKSA1

        MOSFET LOW POWER_LEGACY
        IPP60R330P6

        Mfr.#: IPP60R330P6

        OMO.#: OMO-IPP60R330P6-1190

        MOSFET LOW POWER_LEGACY
        IPP60R330P6XKSA1

        Mfr.#: IPP60R330P6XKSA1

        OMO.#: OMO-IPP60R330P6XKSA1-INFINEON-TECHNOLOGIES

        MOSFET N-CH 600V 12A TO220-3
        유효성
        재고:
        Available
        주문 시:
        2000
        수량 입력:
        IPP60R330P6XKSA1의 현재 가격은 참고용이며 최상의 가격을 원하시면 판매팀 [email protected]으로 문의 또는 다이렉트 이메일을 보내주십시오.
        참고 가격(USD)
        수량
        단가
        내선 가격
        1
        US$0.00
        US$0.00
        10
        US$0.00
        US$0.00
        100
        US$0.00
        US$0.00
        500
        US$0.00
        US$0.00
        1000
        US$0.00
        US$0.00
        시작
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