SI2307BDS-T1-GE3

SI2307BDS-T1-GE3
Mfr. #:
SI2307BDS-T1-GE3
제조사:
Vishay
설명:
MOSFET P-CH 30V 2.5A SOT23-3
수명 주기:
이 제조업체의 새 제품입니다.
데이터 시트:
SI2307BDS-T1-GE3 데이터 시트
배달:
DHL FedEx Ups TNT EMS
지불:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
SI2307BDS-T1-GE3 DatasheetSI2307BDS-T1-GE3 Datasheet (P4-P6)SI2307BDS-T1-GE3 Datasheet (P7-P9)
ECAD Model:
제품 속성
속성 값
Tags
SI2307BDS-T, SI2307B, SI2307, SI230, SI23, SI2
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
Si2307BDS Series 30 V 2.5 A Surface Mount P-Channel Mosfet - SOT-23-3 (TO-236)
***ical
Trans MOSFET P-CH 30V 2.5A 3-Pin SOT-23 T/R
***ment14 APAC
MOSFET, P, SOT-23; Transistor Polarity:P Channel; Continuous Drain Current Id:3.2A; Drain Source Voltage Vds:-30V; On Resistance Rds(on):78mohm; Rds(on) Test Voltage Vgs:-10V; Power Dissipation Pd:750mW; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SOT-23; SVHC:No SVHC (20-Jun-2011); Current Id Max:-2.5A; Junction Temperature Tj Max:150°C; Package / Case:SOT-23; Power Dissipation Pd:750mW; Power Dissipation Pd:750mW; Rise Time:12ns; Termination Type:SMD; Voltage Vds Typ:30V; Voltage Vgs Max:-20V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:3V; Voltage Vgs th Min:1V
부분 # 제조 설명 재고 가격
SI2307BDS-T1-GE3
DISTI # 31975006
Vishay IntertechnologiesTrans MOSFET P-CH 30V 2.5A 3-Pin SOT-23 T/R
RoHS: Compliant
3000
  • 3000:$0.1969
SI2307BDS-T1-GE3
DISTI # SI2307BDS-T1-GE3CT-ND
Vishay SiliconixMOSFET P-CH 30V 2.5A SOT23-3
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)
7753In Stock
  • 1000:$0.2596
  • 500:$0.3245
  • 100:$0.4104
  • 10:$0.5350
  • 1:$0.6100
SI2307BDS-T1-GE3
DISTI # SI2307BDS-T1-GE3DKR-ND
Vishay SiliconixMOSFET P-CH 30V 2.5A SOT23-3
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®
7753In Stock
  • 1000:$0.2596
  • 500:$0.3245
  • 100:$0.4104
  • 10:$0.5350
  • 1:$0.6100
SI2307BDS-T1-GE3
DISTI # SI2307BDS-T1-GE3TR-ND
Vishay SiliconixMOSFET P-CH 30V 2.5A SOT23-3
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)
6000In Stock
  • 30000:$0.1995
  • 15000:$0.2047
  • 6000:$0.2126
  • 3000:$0.2284
SI2307BDS-T1-GE3
DISTI # V36:1790_09216788
Vishay IntertechnologiesTrans MOSFET P-CH 30V 2.5A 3-Pin SOT-23 T/R
RoHS: Compliant
0
  • 3000000:$0.2045
  • 1500000:$0.2047
  • 300000:$0.2133
  • 30000:$0.2263
  • 3000:$0.2284
SI2307BDS-T1-GE3
DISTI # SI2307BDS-T1-GE3
Vishay IntertechnologiesTrans MOSFET P-CH 30V 2.5A 3-Pin TO-236 T/R (Alt: SI2307BDS-T1-GE3)
RoHS: Compliant
Min Qty: 3000
Container: Tape and Reel
Europe - 0
  • 30000:€0.1559
  • 18000:€0.1669
  • 12000:€0.1809
  • 6000:€0.2109
  • 3000:€0.3089
SI2307BDS-T1-GE3
DISTI # SI2307BDS-T1-GE3
Vishay IntertechnologiesTrans MOSFET P-CH 30V 2.5A 3-Pin TO-236 T/R - Tape and Reel (Alt: SI2307BDS-T1-GE3)
RoHS: Not Compliant
Min Qty: 3000
Container: Reel
Americas - 0
  • 30000:$0.1919
  • 18000:$0.1969
  • 12000:$0.2029
  • 6000:$0.2109
  • 3000:$0.2179
SI2307BDS-T1-GE3
DISTI # 781-SI2307BDS-GE3
Vishay IntertechnologiesMOSFET 30V 3.2A 1.25W 78mohm @ 10V
RoHS: Compliant
7294
  • 1:$0.5900
  • 10:$0.4780
  • 100:$0.3630
  • 500:$0.3000
  • 1000:$0.2400
  • 3000:$0.2170
  • 6000:$0.2020
  • 9000:$0.1950
SI2307BDS-T1-GE3Vishay IntertechnologiesMOSFET 30V 3.2A 1.25W 78mohm @ 10V
RoHS: Compliant
Americas -
    영상 부분 # 설명
    SI2307BDS-T1-E3

    Mfr.#: SI2307BDS-T1-E3

    OMO.#: OMO-SI2307BDS-T1-E3

    MOSFET 30V 3.2A 1.25W
    SI2307BDS

    Mfr.#: SI2307BDS

    OMO.#: OMO-SI2307BDS-1190

    2500 mA, 30 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB
    SI2307BDS-T1-GE3

    Mfr.#: SI2307BDS-T1-GE3

    OMO.#: OMO-SI2307BDS-T1-GE3-VISHAY

    MOSFET P-CH 30V 2.5A SOT23-3
    SI2307BDS-T1-E3-CUT TAPE

    Mfr.#: SI2307BDS-T1-E3-CUT TAPE

    OMO.#: OMO-SI2307BDS-T1-E3-CUT-TAPE-1190

    신규 및 오리지널
    SI2307BDS-T1-E3

    Mfr.#: SI2307BDS-T1-E3

    OMO.#: OMO-SI2307BDS-T1-E3-VISHAY

    Trans MOSFET P-CH 30V 2.5A 3-Pin SOT-23 T/R
    유효성
    재고:
    Available
    주문 시:
    1500
    수량 입력:
    SI2307BDS-T1-GE3의 현재 가격은 참고용이며 최상의 가격을 원하시면 판매팀 [email protected]으로 문의 또는 다이렉트 이메일을 보내주십시오.
    참고 가격(USD)
    수량
    단가
    내선 가격
    1
    US$0.27
    US$0.27
    10
    US$0.25
    US$2.52
    100
    US$0.24
    US$23.92
    500
    US$0.23
    US$112.95
    1000
    US$0.21
    US$212.60
    2021년부터 반도체 공급 부족으로 인해 아래 가격은 2021년 이전 정상 가격입니다. 확인을 위해 문의를 보내주세요.
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