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IXFK100N65X2

IXFK100N65X2
Mfr. #:
IXFK100N65X2
제조사:
Littelfuse
설명:
MOSFET MOSFET 650V/100A Ultra Junction X2
수명 주기:
이 제조업체의 새 제품입니다.
데이터 시트:
IXFK100N65X2 데이터 시트
배달:
DHL FedEx Ups TNT EMS
지불:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IXFK100N65X2 DatasheetIXFK100N65X2 Datasheet (P4-P5)
ECAD Model:
추가 정보:
IXFK100N65X2 추가 정보
제품 속성
속성 값
제조사:
익시스
제품 카테고리:
MOSFET
RoHS:
Y
기술:
시
장착 스타일:
구멍을 통해
패키지/케이스:
TO-264-3
채널 수:
1 Channel
트랜지스터 극성:
N-채널
Vds - 드레인 소스 항복 전압:
650 V
Id - 연속 드레인 전류:
100 A
Rds On - 드레인 소스 저항:
30 mOhms
Vgs th - 게이트 소스 임계 전압:
2.7 V
Vgs - 게이트 소스 전압:
30 V
Qg - 게이트 차지:
180 nC
최소 작동 온도:
- 55 C
최대 작동 온도:
+ 150 C
Pd - 전력 손실:
1.04 kW
구성:
하나의
채널 모드:
상승
상표명:
HiPerFET
포장:
튜브
시리즈:
650V Ultra Junction X2
상표:
익시스
순방향 트랜스컨덕턴스 - 최소:
40 S
가을 시간:
7 ns
상품 유형:
MOSFET
상승 시간:
24 ns
공장 팩 수량:
25
하위 카테고리:
MOSFET
일반적인 끄기 지연 시간:
83 ns
일반적인 켜기 지연 시간:
59 ns
단위 무게:
0.264555 oz
Tags
IXFK100, IXFK10, IXFK1, IXFK, IXF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***Components
N-Channel MOSFET, 100 A, 650 V, 3-Pin TO-264P IXYS IXFK100N65X2
***ark
Mosfet, N Channel, 650V, 100A, To 246P Rohs Compliant: Yes
***ical
Trans MOSFET N-CH 650V 100A 3-Pin(3+Tab) TO-264
***i-Key
MOSFET N-CH 650V 100A TO-264
***ment14 APAC
Prices include import duty and tax. MOSFET, N-CH, 650V, 100A, TO-246P; Transistor Polarity:N Channel; Continuous Drain Current Id:100A; Drain Source Voltage Vds:650V; On Resistance Rds(on):0.03ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:5V; Power Dissipation Pd:1.04kW; Transistor Case Style:TO-264P; No. of Pins:3Pins; Operating Temperature Max:150°C; Product Range:HiPerFET Series; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (12-Jan-2017)
***nell
MOSFET, CA-N, 650V, 100A, TO-246P; Polarità Transistor:Canale N; Corrente Continua di Drain Id:100A; Tensione Drain Source Vds:650V; Resistenza di Attivazione Rds(on):0.03ohm; Tensione Vgs di Misura Rds(on):10V; Tensione di Soglia Vgs:5V; Dissipazione di Potenza Pd:1.04kW; Modello Case Transistor:TO-264P; No. di Pin:3Pin; Temperatura di Esercizio Max:150°C; Gamma Prodotti:HiPerFET Series; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):MSL 1 - Non Limitata; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (12-Jan-2017)
Electrical Vehicle DC Fast Chargers
DC charging stations are designed to convert the electrical grid’s AC power into DC power that can then be fed directly into a vehicle’s battery system for fast charging – in 30 minutes or less. Because the conversion from AC to DC power is being done in the charging station, these units can provide higher levels of power (50kW to 350kW and beyond) to the vehicle compared to AC charging stations. Working with tens to hundreds of kilowatts of power, efficient conversion, reliability of the system, and user safety are critical.
X2-Class 650V-700V Power MOSFETs with HiPerFET™
IXYS X2-Class 650V-700V Power MOSFETs with HiPerFET™ are designed for high-efficiency and high-speed power switching applications. The Ultra-Junction X2-Class MOSFETs offer low gate charge and excellent ruggedness with a fast intrinsic diode. These MOSFETs are available in many standard industrial packages including isolated types. Typical applications are switch-mode and resonant-mode power supplies, DC-DC converters, PFC circuits, AC and DC motor drives and robotics and servo controls.
Ultra Junction MOSFETs
IXYS Ultra Junction MOSFETs feature low RDS(on) and low Qg in low inductance industry standard packages. These devices enable high power density, easy mounting, and space-saving opportunities. The ultra junction MOSFETs are ideal solutions in SMPS, DC-DC converters, PFC circuits, AC and DC motor drives, and robotics/servo controls.
부분 # 제조 설명 재고 가격
IXFK100N65X2
DISTI # IXFK100N65X2-ND		IXYS CorporationMOSFET N-CH 650V 100A TO-264
RoHS: Compliant
Min Qty: 1
Container: Tube		19In Stock
  • 500:$8.7000
  • 100:$10.2000
  • 25:$11.1000
  • 10:$12.0000
  • 1:$13.2000
IXFK100N65X2
DISTI # 02AC9804		IXYS CorporationMOSFET, N-CH, 650V, 100A, TO-246P,Transistor Polarity:N Channel,Continuous Drain Current Id:100A,Drain Source Voltage Vds:650V,On Resistance Rds(on):0.03ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:5V,Power RoHS Compliant: Yes20
  • 500:$8.7900
  • 250:$9.5400
  • 100:$10.3000
  • 50:$10.7600
  • 25:$11.2100
  • 10:$12.2700
  • 1:$13.3300
IXFK100N65X2
DISTI # 747-IXFK100N65X2		IXYS CorporationMOSFET MOSFET 650V/100A Ultra Junction X2
RoHS: Compliant		1484
  • 1:$13.2000
  • 10:$12.1500
  • 25:$11.1000
  • 50:$10.6500
  • 100:$10.2000
  • 250:$9.4500
  • 500:$8.7000
IXFK100N65X2
DISTI # 9171429P		IXYS CorporationN-CH X2 SERIES MOSFET 650V 100A TO-264P, TU93
  • 75:£9.4900
  • 25:£10.0000
  • 10:£10.4300
  • 5:£10.8700
IXFK100N65X2
DISTI # 2674751		IXYS CorporationMOSFET, N-CH, 650V, 100A, TO-246P
RoHS: Compliant		20
  • 100:$15.3800
  • 25:$16.7300
  • 10:$18.0900
  • 1:$19.8900
IXFK100N65X2
DISTI # 2674751		IXYS CorporationMOSFET, N-CH, 650V, 100A, TO-246P
RoHS: Compliant		18
  • 100:£7.2600
  • 50:£7.7200
  • 10:£7.8900
  • 5:£9.4000
  • 1:£9.8700
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 SHORTER RECOVERY TIME, ENABLING
유효성
재고:
Available
주문 시:
1984
수량 입력:
IXFK100N65X2의 현재 가격은 참고용이며 최상의 가격을 원하시면 판매팀 [email protected]으로 문의 또는 다이렉트 이메일을 보내주십시오.
참고 가격(USD)
수량
단가
내선 가격
1
US$13.20
US$13.20
10
US$12.15
US$121.50
25
US$11.10
US$277.50
50
US$10.65
US$532.50
100
US$10.20
US$1 020.00
250
US$9.45
US$2 362.50
500
US$8.70
US$4 350.00
1000
US$8.25
US$8 250.00
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