FDMD85100

Mfr. #:: FDMD85100
제조사:: ON Semiconductor
설명:: IGBT Transistors MOSFET 100V Dual N-Channel PowerTrench MOSFET
수명 주기:: 이 제조업체의 새 제품입니다.
데이터 시트:: FDMD85100 데이터 시트
배달:: DHL FedEx Ups TNT EMS
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ECAD Model:
추가 정보:: FDMD85100 추가 정보

제품 속성
속성 값

제조사: 페어차일드 반도체

제품 카테고리: FET - 어레이

시리즈: 파워트렌치R

포장: Digi-ReelR 대체 패키징

단위 무게: 0.008818 oz

장착 스타일: SMD/SMT

패키지 케이스: 8-PowerWDFN

기술: 시

작동 온도: -55°C ~ 150°C (TJ)

장착형: 표면 실장

채널 수: 2 Channel

공급자-장치-패키지: 8-Power 5x6

구성: 듀얼

FET형: 2 N-Channel (Half Bridge)

파워맥스: 2.2W

트랜지스터형: 2 N-Channel

드레인-소스 전압 Vdss: 100V

입력-커패시턴스-Ciss-Vds: 2230pF @ 50V

FET 기능: 기준

Current-Continuous-Drain-Id-25°C: 10.4A

Rds-On-Max-Id-Vgs: 9.9 mOhm @ 10.4A, 10V

Vgs-th-Max-Id: 4V @ 250μA

Gate-Charge-Qg-Vgs: 31nC @ 10V

Pd 전력 손실: 50 W 50 W

최대 작동 온도: + 150 C

최소 작동 온도: - 55 C

가을철: 4.2 ns 4.4 ns

상승 시간: 5 ns 5.6 ns

Vgs 게이트 소스 전압: 20 V 20 V

Id-연속-드레인-전류: 48 A 48 A

Vds-드레인-소스-고장-전압: 100 V 100 V

Vgs-th-Gate-Source-Threshold-Voltage: 2 V 2V

Rds-On-Drain-Source-Resistance: 18.7 mOhms 18.6 mOhms

트랜지스터 극성: N-채널

일반 꺼짐 지연 시간: 19 ns 18 ns

일반 켜기 지연 시간: 14 ns 12.5 ns

Qg-Gate-Charge: 22 nC 21 nC

순방향 트랜스컨덕턴스-최소: 27 S 26 S

채널 모드: 상승

Tags: FDMD85, FDMD, FDM

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

FDMD85100 설명

***et Japan: Transistor MOSFET Array Dual N-CH 100V 48A 8-Pin PQFN T/R

***emi: Dual N-Channel PowerTrench® MOSFET 100V 48A, 9.9mΩ

***ark: 100V Dual N-Channel PowerTrench MOSFET - 8LD, PQFN, JEDEC, 5.0X6.0MM, POWERCLIP DUAL, SYMMETRICAL HAL

***rchild Semiconductor: This device includes two 100V N-Channel MOSFETs in a dual Power (5 mm X 6 mm) package. HS source and LS Drain internally connected for half/full bridge, low source inductance package, low rDS(on)/Qg FOM silicon.

FDMD85100 추가 정보

PowerTrench® MOSFETs: ON Semiconductor PowerTrench® MOSFETs offer a broad portfolio of MOSFETs in the industry. These MOSFETs offer both N-Channel and P-Channel versions that are optimized for low RDS(ON) switching performance and ruggedness. Typical applications include load switches, primary switching, mobile computing, DC-DC converters, and synchronous rectifiers.

Market price

부분 #	제조	설명	재고	가격
FDMD85100 DISTI # V72:2272_06337942	ON Semiconductor	100V DUAL N-CHANNEL POWERTRENC	2898	1000:$1.4840 500:$1.7360 250:$1.9310 100:$2.0230 25:$2.3150 10:$2.3170 1:$2.7030
FDMD85100 DISTI # FDMD85100CT-ND	ON Semiconductor	MOSFET 2N-CH 100V RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	5182In Stock	1000:$1.6904 500:$2.0043 100:$2.4752 10:$3.0190 1:$3.3800
FDMD85100 DISTI # FDMD85100DKR-ND	ON Semiconductor	MOSFET 2N-CH 100V RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	5182In Stock	1000:$1.6904 500:$2.0043 100:$2.4752 10:$3.0190 1:$3.3800
FDMD85100 DISTI # FDMD85100TR-ND	ON Semiconductor	MOSFET 2N-CH 100V RoHS: Compliant Min Qty: 3000 Container: Tape & Reel (TR)	3000In Stock	3000:$1.5591
FDMD85100 DISTI # 27527757	ON Semiconductor	100V DUAL N-CHANNEL POWERTRENC	9000	3000:$1.5590
FDMD85100 DISTI # 25975390	ON Semiconductor	100V DUAL N-CHANNEL POWERTRENC	2898	1000:$1.4840 500:$1.7360 250:$1.9310 100:$2.0230 25:$2.3150 10:$2.3170 5:$2.7030
FDMD85100 DISTI # FDMD85100	ON Semiconductor	Trans MOSFET N-CH 100V 10.4A 8-Pin PQFN T/R - Tape and Reel (Alt: FDMD85100) RoHS: Compliant Min Qty: 3000 Container: Reel	Americas - 0	3000:$1.2900 6000:$1.2900 12000:$1.2900 18000:$1.2900 30000:$1.2900
FDMD85100 DISTI # FDMD85100	ON Semiconductor	Trans MOSFET N-CH 100V 10.4A 8-Pin PQFN T/R (Alt: FDMD85100) RoHS: Compliant Min Qty: 3000 Container: Tape and Reel	Europe - 0	3000:€2.2900 6000:€1.7900 12000:€1.5900 18000:€1.3900 30000:€1.3900
FDMD85100 DISTI # 512-FDMD85100	ON Semiconductor	MOSFET FET 100V 9.9 MOHM PQFN56 RoHS: Compliant	2807	1:$2.8300 10:$2.4000 100:$2.0800 250:$1.9800 500:$1.7700 1000:$1.5000
FDMD85100	Fairchild Semiconductor Corporation	Power Field-Effect Transistor RoHS: Compliant	2101	1000:$1.5500 500:$1.6300 100:$1.7000 25:$1.7700 1:$1.9100
FDMD85100 DISTI # C1S541901391436	ON Semiconductor	Trans MOSFET N-CH 100V 10.4A 8-Pin PQFN EP T/R RoHS: Compliant	2898	250:$1.9310 100:$2.0230 25:$2.3150 10:$2.3170 1:$2.7030

영상	부분 #	설명
	Mfr.#: FDMD8440L OMO.#: OMO-FDMD8440L	MOSFET FET 40V 87A 2.6 mOhm
	Mfr.#: FDMD8560L OMO.#: OMO-FDMD8560L	MOSFET 60V Dual N-Channel PowerTrench MOSFET
	Mfr.#: FDMD8260LET60 OMO.#: OMO-FDMD8260LET60	MOSFET 60V/20V Dual Nch Power Trench MOSFET
	Mfr.#: FDMD8240L OMO.#: OMO-FDMD8240L	MOSFET PT8 N-ch40VLLDualNch PowerTrench MOSFET
	Mfr.#: FDMD85100 OMO.#: OMO-FDMD85100	MOSFET FET 100V 9.9 MOHM PQFN56
	Mfr.#: FDMD8260LET60 OMO.#: OMO-FDMD8260LET60-ON-SEMICONDUCTOR	MOSFET 2N-CH 60V 15A
	Mfr.#: FDMD84100 OMO.#: OMO-FDMD84100-ON-SEMICONDUCTOR	MOSFET 2N-CH 100V 7A 8-PQFN
	Mfr.#: FDMD86100 OMO.#: OMO-FDMD86100-ON-SEMICONDUCTOR	MOSFET 2N-CH 100V
	Mfr.#: FDMD8240LET40 OMO.#: OMO-FDMD8240LET40-ON-SEMICONDUCTOR	MOSFET 2N-CH 40V 24A POWER3.3X5
	Mfr.#: FDMD8900 OMO.#: OMO-FDMD8900-ON-SEMICONDUCTOR	MOSFET 2N-CH 30V POWER

FDMD85100

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes