QPD2795

Mfr. #:: QPD2795
제조사:: Qorvo
설명:: RF JFET Transistors 2.5-2.7GHz 360W 48V Gain 22dB GaN
수명 주기:: 이 제조업체의 새 제품입니다.
데이터 시트:: QPD2795 데이터 시트
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ECAD Model:
추가 정보:: QPD2795 추가 정보

제품 속성
속성 값

제조사:: 코르보

제품 카테고리:: RF JFET 트랜지스터

RoHS:: Y

트랜지스터 유형:: 헴트

기술:: GaN SiC

얻다:: 22 dB

트랜지스터 극성:: N-채널

Vds - 드레인 소스 항복 전압:: 48 V

Id - 연속 드레인 전류:: 360 mA

출력 파워:: 364 W

최대 드레인 게이트 전압:: 55 V

최소 작동 온도:: - 40 C

최대 작동 온도:: + 85 C

Pd - 전력 손실:: 83.5 W

장착 스타일:: SMD/SMT

패키지/케이스:: NI780-2

포장:: 와플

구성:: 듀얼

동작 주파수:: 2.5 GHz to 2.7 GHz

작동 온도 범위:: - 40 C to + 85 C

시리즈:: QPD

상표:: 코르보

습기에 민감한:: 네

상품 유형:: RF JFET 트랜지스터

공장 팩 수량:: 250

하위 카테고리:: 트랜지스터

Vgs th - 게이트 소스 임계 전압:: - 2.7 V

부품 번호 별칭:: 1130777

Tags: QPD279, QPD27, QPD2, QPD

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Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

QPD2795 설명

***W: RF Transistor, Power, 2.5 - 2.7 GHz, 55.6 dBm, 22 dB, GaN, NI-780 Ceramic

QPD2795 추가 정보

QPD GaN RF Transistors: Qorvo QPD GaN RF Transistors can be used in Doherty architecture for the final stage of a base station power amplifier for macrocell high-efficiency systems. These GaN transistors are discrete GaN on SiC HEMTs with a single-stage matched power amplifier transistor. Typical applications include W-CDMA/LTE, Macrocell base station, active antenna and general purpose applications.

Market price

부분 #	제조	설명	재고	가격
QPD2795 DISTI # 772-QPD2795	Qorvo	RF JFET Transistors 2.5-2.7GHz 360W 48V Gain 22dB GaN RoHS: Compliant	10	1:$198.7400 25:$164.5800

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