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| 부분 # | 제조 | 설명 | 재고 | 가격 |
|---|---|---|---|---|
| SI4812BDY-T1-E3 DISTI # V72:2272_09216572 | Vishay Intertechnologies | Trans MOSFET N-CH 30V 7.3A 8-Pin SOIC N T/R RoHS: Compliant | 0 | |
| SI4812BDY-T1-GE3 DISTI # SI4812BDY-T1-GE3CT-ND | Vishay Siliconix | MOSFET N-CH 30V 7.3A 8-SOIC RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT) | 2357In Stock |
|
| SI4812BDY-T1-GE3 DISTI # SI4812BDY-T1-GE3DKR-ND | Vishay Siliconix | MOSFET N-CH 30V 7.3A 8-SOIC RoHS: Compliant Min Qty: 1 Container: Digi-Reel® | 2357In Stock |
|
| SI4812BDY-T1-E3 DISTI # SI4812BDY-T1-E3CT-ND | Vishay Siliconix | MOSFET N-CH 30V 7.3A 8-SOIC RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT) | 1171In Stock |
|
| SI4812BDY-T1-E3 DISTI # SI4812BDY-T1-E3DKR-ND | Vishay Siliconix | MOSFET N-CH 30V 7.3A 8-SOIC RoHS: Compliant Min Qty: 1 Container: Digi-Reel® | 1171In Stock |
|
| SI4812BDY-T1-GE3 DISTI # SI4812BDY-T1-GE3TR-ND | Vishay Siliconix | MOSFET N-CH 30V 7.3A 8-SOIC RoHS: Compliant Min Qty: 2500 Container: Tape & Reel (TR) | Limited Supply - Call | |
| SI4812BDY-T1-E3 DISTI # SI4812BDY-T1-E3TR-ND | Vishay Siliconix | MOSFET N-CH 30V 7.3A 8-SOIC RoHS: Compliant Min Qty: 2500 Container: Tape & Reel (TR) | Limited Supply - Call | |
| SI4812BDY-E3 DISTI # SI4812BDY-E3 | Vishay Intertechnologies | Trans MOSFET N-CH 30V 7.3A 8-Pin SOIC N - Rail/Tube (Alt: SI4812BDY-E3) RoHS: Compliant Min Qty: 500 Container: Tube | Americas - 0 |
|
| SI4812BDY-T1-E3 DISTI # 51K6963 | Vishay Intertechnologies | N CHANNEL MOSFET, 30V, 9.5A, SOIC,Transistor Polarity:N Channel + Schottky,Continuous Drain Current Id:7.3A,Drain Source Voltage Vds:30V,On Resistance Rds(on):0.013ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3V RoHS Compliant: Yes | 0 | |
| SI4812BDY-T1-GE3 DISTI # 90R9129 | Vishay Intertechnologies | MOSFET Transistor, N Channel, 9.5 A, 30 V, 13 mohm, 10 V, 1 V RoHS Compliant: Yes | 0 | |
| SI4812BDY-T1-E3 DISTI # 781-SI4812BDY-E3 | Vishay Intertechnologies | MOSFET 30V 9A 2.5W RoHS: Compliant | 0 | |
| SI4812BDY-T1-GE3 DISTI # 781-SI4812BDY-GE3 | Vishay Intertechnologies | MOSFET 30V 9.5A 2.5W 16mohm @ 10V RoHS: Compliant | 0 | |
| SI4812DY DISTI # 781-SI4812DY | Vishay Intertechnologies | MOSFET RECOMMENDED ALT 781-SI4812BDY-E3 RoHS: Not compliant | 0 | |
| SI4812DY-T1-E3 DISTI # 781-SI4812DY-T1-E3 | Vishay Intertechnologies | MOSFET RECOMMENDED ALT 781-SI4812BDY-E3 RoHS: Compliant | 0 | |
| SI4812DY-E3 DISTI # 781-SI4812DY-E3 | Vishay Intertechnologies | MOSFET 30V 9A 2.5W RoHS: Compliant | 0 | |
| SI4812BDY-T1-E3 | Vishay Intertechnologies | 8440 | ||
| SI4812BDY-T1-GE3 DISTI # 1840424 | Vishay Intertechnologies | MOSFET+DIODE, N CH, 30V, 7.3A, 8SOIC RoHS: Compliant | 848 |
|
| SI4812BDY-T1-E3. DISTI # 2096246 | Vishay Intertechnologies | N CHANNEL MOSFET, 30V, 9.5A, SOIC RoHS: Compliant | 0 |
|
| SI4812BDY-T1-GE3 DISTI # 1840424 | Vishay Intertechnologies | MOSFET+DIODE, N CH, 30V, 7.3A, 8SOIC RoHS: Compliant | 848 |
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| 영상 | 부분 # | 설명 |
|---|---|---|
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Mfr.#: SI4122-D-GM OMO.#: OMO-SI4122-D-GM |
Phase Locked Loops - PLL RF synthesizer with RF2/IF output |
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Mfr.#: SI4662DY-T1-E3 OMO.#: OMO-SI4662DY-T1-E3-317 |
RF Bipolar Transistors MOSFET 30V 18.6A 6.25W |
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Mfr.#: SI4102DY-T1-E3 OMO.#: OMO-SI4102DY-T1-E3-VISHAY |
MOSFET N-CH 100V 3.8A 8-SOIC |
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Mfr.#: SI43-1K5-R OMO.#: OMO-SI43-1K5-R-1190 |
신규 및 오리지널 |
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Mfr.#: SI4464-BIB-FM OMO.#: OMO-SI4464-BIB-FM-1190 |
신규 및 오리지널 |
|
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Mfr.#: SI4466DY-T1 OMO.#: OMO-SI4466DY-T1-1190 |
MOSFET 20V 13.2A 2.5W |
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Mfr.#: SI4779CY-T1 OMO.#: OMO-SI4779CY-T1-1190 |
신규 및 오리지널 |
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Mfr.#: SI4966DY-E3 OMO.#: OMO-SI4966DY-E3-1190 |
MOSFET 20V 7.1A 2W |
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Mfr.#: SI4763-A50-AM |
RF RECEIVER 64MHZ-108MHZ 40QFN |
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Mfr.#: SI4430-B1-FM |
RF Transceiver Si4430 EZRadioPRO Transceiver +13dBm |