RFD4N06L

RFD4N06L
Mfr. #:
RFD4N06L
제조사:
Rochester Electronics, LLC
설명:
Power Field-Effect Transistor, 4A I(D), 60V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA
수명 주기:
이 제조업체의 새 제품입니다.
데이터 시트:
RFD4N06L 데이터 시트
배달:
DHL FedEx Ups TNT EMS
지불:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
제품 속성
속성 값
Tags
RFD4N, RFD4, RFD
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
부분 # 제조 설명 재고 가격
RFD4N06LSM9A
DISTI # RFD4N06LSM9A-ND
ON SemiconductorMOSFET N-CH 60V 4A DPAK
RoHS: Compliant
Min Qty: 2500
Container: Tape & Reel (TR)
Limited Supply - Call
    RFD4N06LSM9A
    DISTI # 512-RFD4N06LSM9A
    ON SemiconductorMOSFET 60V Single
    RoHS: Compliant
    0
      RFD4N06LSM9AFairchild Semiconductor CorporationPower Field-Effect Transistor, 4A I(D), 60V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
      RoHS: Compliant
      67132
      • 1000:$0.5100
      • 500:$0.5400
      • 100:$0.5600
      • 25:$0.5900
      • 1:$0.6300
      RFD4N06LHarris SemiconductorPower Field-Effect Transistor, 4A I(D), 60V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA
      RoHS: Not Compliant
      1424
      • 1000:$0.2800
      • 500:$0.2900
      • 100:$0.3000
      • 25:$0.3200
      • 1:$0.3400
      RFD4N06LHARTING Technology GroupPower Field-Effect Transistor, 4A I(D), 60V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA
      RoHS: Not Compliant
      975
        RFD4N06LSM9AS2457Fairchild Semiconductor Corporation 
        RoHS: Compliant
        38489
          영상 부분 # 설명
          RFD4N06LSM9A

          Mfr.#: RFD4N06LSM9A

          OMO.#: OMO-RFD4N06LSM9A

          MOSFET 60V Single
          RFD40N03

          Mfr.#: RFD40N03

          OMO.#: OMO-RFD40N03-1190

          신규 및 오리지널
          RFD43F-NF

          Mfr.#: RFD43F-NF

          OMO.#: OMO-RFD43F-NF-1190

          신규 및 오리지널
          RFD4N06L

          Mfr.#: RFD4N06L

          OMO.#: OMO-RFD4N06L-1190

          Power Field-Effect Transistor, 4A I(D), 60V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA
          RFD4N06LSM

          Mfr.#: RFD4N06LSM

          OMO.#: OMO-RFD4N06LSM-1190

          신규 및 오리지널
          RFD4N06LSM9A

          Mfr.#: RFD4N06LSM9A

          OMO.#: OMO-RFD4N06LSM9A-ON-SEMICONDUCTOR

          MOSFET N-CH 60V 4A DPAK
          RFD4N06LSM9AS2457

          Mfr.#: RFD4N06LSM9AS2457

          OMO.#: OMO-RFD4N06LSM9AS2457-1190

          신규 및 오리지널
          유효성
          재고:
          Available
          주문 시:
          2500
          수량 입력:
          RFD4N06L의 현재 가격은 참고용이며 최상의 가격을 원하시면 판매팀 [email protected]으로 문의 또는 다이렉트 이메일을 보내주십시오.
          참고 가격(USD)
          수량
          단가
          내선 가격
          1
          US$0.00
          US$0.00
          10
          US$0.00
          US$0.00
          100
          US$0.00
          US$0.00
          500
          US$0.00
          US$0.00
          1000
          US$0.00
          US$0.00
          시작
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