SI4966DY-T1-E3

SI4966DY-T1-E3
Mfr. #:
SI4966DY-T1-E3
제조사:
Vishay / Siliconix
설명:
MOSFET RECOMMENDED ALT 781-SI9926CDY-T1-GE3
수명 주기:
이 제조업체의 새 제품입니다.
데이터 시트:
SI4966DY-T1-E3 데이터 시트
배달:
DHL FedEx Ups TNT EMS
지불:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
SI4966DY-T1-E3 DatasheetSI4966DY-T1-E3 Datasheet (P4-P6)SI4966DY-T1-E3 Datasheet (P7-P8)
ECAD Model:
제품 속성
속성 값
제조사:
비쉐이
제품 카테고리:
MOSFET
RoHS:
E
기술:
장착 스타일:
SMD/SMT
패키지/케이스:
SO-8
상표명:
TrenchFET
포장:
키:
1.75 mm
길이:
4.9 mm
시리즈:
SI4
너비:
3.9 mm
상표:
비쉐이 / 실리콘닉스
상품 유형:
MOSFET
공장 팩 수량:
2500
하위 카테고리:
MOSFET
부품 번호 별칭:
SI4966DY-E3
단위 무게:
0.006596 oz
Tags
SI4966DY-T, SI4966D, SI4966, SI496, SI49, SI4
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
Dual N-Channel 20 V 0.025 Ohms Surface Mount Power Mosfet - SOIC-8
***ied Electronics & Automation
MOSFET, Power,Dual N-Ch,VDSS 20V,RDS(ON) 0.019Ohm,ID+/-7.1A,SO-8,PD 2W,VGS+/-12V
***ical
Trans MOSFET N-CH 20V 7.1A 8-Pin SOIC N T/R
***ark
Transistor; Transistor Type:MOSFET; Transistor Polarity:Dual N Channel; Drain Source Voltage, Vds:20V; Continuous Drain Current, Id:7.1A; On Resistance, Rds(on):0.025ohm; Rds(on) Test Voltage, Vgs:4.5V ;RoHS Compliant: Yes
***nell
MOSFET, NP, REEL 2500; Transistor Type:MOSFET; Transistor Polarity:Dual N; Voltage, Vds Typ:20V; Current, Id Cont:7.2A; Resistance, Rds On:0.025ohm; Voltage, Vgs Rds on Measurement:2.5V; Voltage, Vgs th Typ:1.5V; Case Style:SOIC; Termination Type:SMD; Current, Idm Pulse:40A; N-channel Gate Charge:25nC; No. of Pins:8; Power, Pd:2W; Quantity, Reel:2500; Resistance, Rds on @ Vgs = 2.5V:0.035ohm; Resistance, Rds on @ Vgs = 4.5V:0.025ohm; SMD Marking:SI4966DY; Transistors, No. of:2; Voltage, Vds Max:20V; Width, Tape:12mm
부분 # 제조 설명 재고 가격
SI4966DY-T1-E3
DISTI # SI4966DY-T1-E3TR-ND
Vishay SiliconixMOSFET 2N-CH 20V 8SOIC
RoHS: Compliant
Min Qty: 2500
Container: Tape & Reel (TR)
Limited Supply - Call
    SI4966DY-T1-E3
    DISTI # SI4966DY-T1-E3CT-ND
    Vishay SiliconixMOSFET 2N-CH 20V 8SOIC
    RoHS: Compliant
    Min Qty: 1
    Container: Cut Tape (CT)
    Limited Supply - Call
      SI4966DY-T1-E3
      DISTI # SI4966DY-T1-E3DKR-ND
      Vishay SiliconixMOSFET 2N-CH 20V 8SOIC
      RoHS: Compliant
      Min Qty: 1
      Container: Digi-Reel®
      Limited Supply - Call
        SI4966DY-T1-E3
        DISTI # 06J8013
        Vishay IntertechnologiesDUAL N CHANNEL MOSFET, 20V, SOIC, FULL REEL,Transistor Polarity:Dual N Channel,Continuous Drain Current Id:7.1A,Drain Source Voltage Vds:20V,On Resistance Rds(on):0.025ohm,Rds(on) Test Voltage Vgs:4.5V,Power Dissipation Pd:2W RoHS Compliant: Yes0
          SI4966DY-T1-E3
          DISTI # 70026027
          Vishay SiliconixMOSFET,Power,Dual N-Ch,VDSS 20V,RDS(ON) 0.019Ohm,ID +/-7.1A,SO-8,PD 2W,VGS +/-1
          RoHS: Compliant
          0
          • 2500:$1.0500
          SI4966DY-T1-E3
          DISTI # 781-SI4966DY-T1-E3
          Vishay IntertechnologiesMOSFET RECOMMENDED ALT 781-SI9926CDY-T1-GE3
          RoHS: Compliant
          0
            SI4966DY-T1
            DISTI # 781-SI4966DY-TR
            Vishay IntertechnologiesMOSFET RECOMMENDED ALT 781-SI9926CDY-E3
            RoHS: Not compliant
            0
              SI4966DY-T1-E3Vishay Intertechnologies 1666
                영상 부분 # 설명
                SI4966DY-T1-E3

                Mfr.#: SI4966DY-T1-E3

                OMO.#: OMO-SI4966DY-T1-E3

                MOSFET RECOMMENDED ALT 781-SI9926CDY-T1-GE3
                SI4966DY-T1-GE3

                Mfr.#: SI4966DY-T1-GE3

                OMO.#: OMO-SI4966DY-T1-GE3

                MOSFET RECOMMENDED ALT 781-SI9926CDY-T1-GE3
                SI4966DY-T1-GE3

                Mfr.#: SI4966DY-T1-GE3

                OMO.#: OMO-SI4966DY-T1-GE3-VISHAY

                RF Bipolar Transistors MOSFET 20V 7.1A 2.0W 25mohm @ 4.5V
                SI4966DY

                Mfr.#: SI4966DY

                OMO.#: OMO-SI4966DY-1190

                MOSFET 20V 7.1A 2W
                SI4966DY-E3

                Mfr.#: SI4966DY-E3

                OMO.#: OMO-SI4966DY-E3-1190

                MOSFET 20V 7.1A 2W
                SI4966DY-T1

                Mfr.#: SI4966DY-T1

                OMO.#: OMO-SI4966DY-T1-1190

                MOSFET RECOMMENDED ALT 781-SI9926CDY-E3
                SI4966DY-T1-E3

                Mfr.#: SI4966DY-T1-E3

                OMO.#: OMO-SI4966DY-T1-E3-VISHAY

                MOSFET 2N-CH 20V 8SOIC
                SI4966DYT1

                Mfr.#: SI4966DYT1

                OMO.#: OMO-SI4966DYT1-1190

                신규 및 오리지널
                유효성
                재고:
                Available
                주문 시:
                2500
                수량 입력:
                SI4966DY-T1-E3의 현재 가격은 참고용이며 최상의 가격을 원하시면 판매팀 [email protected]으로 문의 또는 다이렉트 이메일을 보내주십시오.
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