PSMN1R6-30PL

Mfr. #:: PSMN1R6-30PL
제조사:: Nexperia
설명:: MOSFET,N CHANNEL,30V,100A,TO-220AB, Transistor Polarity:N Channel, Continuous Drain Current Id:100A, Drain Source Voltage Vds:30V, On Resistance Rds(on):0.0014ohm, Rds(on) Test Voltage Vgs:10V,
수명 주기:: 이 제조업체의 새 제품입니다.
데이터 시트:: PSMN1R6-30PL 데이터 시트
배달:: DHL FedEx Ups TNT EMS
지불:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:

제품 속성
속성 값

Tags: PSMN1R6-30P, PSMN1R6-3, PSMN1R6, PSMN1R, PSMN1, PSMN, PSM

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

PSMN1R6-30PL 설명

***el Nordic: Contact for details

***ment14 APAC: MOSFET,N CH,30V,100A,TO-220AB; Transistor Polarity:N Channel; Drain Source Voltage Vds:30V; On Resistance Rds(on):1.4mohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:306W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Id Max:100A; Power Dissipation Pd:306W; Voltage Vgs Max:20V

***ical: Trans MOSFET N-CH 30V 120A Automotive 3-Pin(3+Tab) TO-220AB Rail

***i-Key: PFET, 120A I(D), 30V, 0.0037OHM,

***peria: N-channel TrenchMOS intermediate level FET

***el Electronic: IC MOTOR DRIVER 3.6V-16V 16SSOP

***S: French Electronic Distributor since 1988

***ark: N CH MOSFET, TRENCH AUTO, 30V, 120A, 3TO220AB; Transistor Polarity:N Channel; Continuous Drain Current Id:120A; Drain Source Voltage Vds:30V; On Resistance Rds(on):1.9mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2.3V;RoHS Compliant: Yes

***emi: N-Channel PowerTrench® MOSFET 30V, 80A, 2.5mΩ

***ure Electronics: N-Channel 30 V 2.5 mOhm PowerTrench Mosfet - TO-220

***r Electronics: Power Field-Effect Transistor, 80A I(D), 30V, 0.0029ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

***ark: Transistor Polarity:n Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:80A; On Resistance Rds(On):0.0025Ohm; Transistor Mounting:through Hole; Rds(On) Test Voltage Vgs:1.6V; Threshold Voltage Vgs:20V; Msl:- Rohs Compliant: Yes

***rchild Semiconductor: This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS(on) and fast switching speed.

***ment14 APAC: MOSFET, N, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:80A; Drain Source Voltage Vds:30V; On Resistance Rds(on):2.5mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.6V; Power Dissipation Pd:254W; Transistor Case Style:TO-220; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Alternate Case Style:SOT-78B; Capacitance Ciss Typ:9200pF; Current Id Max:80A; Junction Temperature Tj Max:150°C; Junction Temperature Tj Min:-55°C; Junction to Case Thermal Resistance A:0.59°C/W; On State Resistance Max:2.5mohm; On State Resistance Typ:1.9mohm; Package / Case:TO-220; Pin Configuration:G(1),D(2)S(3); Power Dissipation Pd:254W; Power Dissipation Pd:254W; Pulse Current Idm:556A; Termination Type:Through Hole; Voltage Vds Typ:30V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:2.5V; Voltage Vgs th Min:1V

***ure Electronics: Single N-Channel 30 V 7 mOhm 60 nC HEXFET® Power Mosfet - TO-220-3

***ineon SCT: 30V Single N-Channel HEXFET Power MOSFET in a TO-220AB package, TO220-3, RoHS

***p One Stop Global: Trans MOSFET N-CH Si 30V 116A 3-Pin(3+Tab) TO-220AB Tube

***(Formerly Allied Electronics): MOSFET, 30V, 100A, 7 MOHM, 40 NC QG, LOGIC LEVEL, TO-220AB

***ineon: Benefits: RoHS Compliant; Industry-leading quality; Fully Avalanche Rated; Logic Level

***trelec: MOSFET Operating temperature: -55...175 °C Housing type: TO-220 Polarity: N Power dissipation: 180 W

***S.I.T. Europe - USA - Asia: Power Field-Effect Transistor, 116A I(D), 30V, 0.007ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

***ment14 APAC: MOSFET, N, 30V, 100A, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:100A; Drain Source Voltage Vds:30V; On Resistance Rds(on):7mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1V; Power Dissipation Pd:130W; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:116A; Current Temperature:25°C; Full Power Rating Temperature:25°C; Junction to Case Thermal Resistance A:1.2°C/W; Lead Spacing:2.54mm; No. of Transistors:1; Package / Case:TO-220AB; Power Dissipation Pd:130W; Power Dissipation Pd:130W; Pulse Current Idm:400A; Termination Type:Through Hole; Voltage Vds Typ:30V; Voltage Vgs Max:1V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:2.5V; Voltage Vgs th Min:1V

***(Formerly Allied Electronics): MOSFET, N Ch., 30V, 105A, 6 MOHM, 23 NCQG, TO-220AB, Pb-Free

***ure Electronics: Single N-Channel 30 V 6 mOhm 23 nC HEXFET® Power Mosfet - TO-220-3

***ineon SCT: 30V Single N-Channel HEXFET Power MOSFET in a TO-220AB package, TO220-3, RoHS

***p One Stop Global: Trans MOSFET N-CH 30V 105A 3-Pin(3+Tab) TO-220AB Tube

***ineon: Benefits: RoHS Compliant; Industry-leading quality; Low RDS(ON) at 4.5V VGS; Fully Characterized Avalanche Voltage and Current; Ultra-Low Gate Impedance; Logic Level

***ark: N Channel Mosfet, 30V, 105A, To-220Ab; Transistor Polarity:n Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:105A; On Resistance Rds(On):0.006Ohm; Transistor Mounting:through Hole; Rds(On) Test Voltage Vgs:10V Rohs Compliant: Yes

***ment14 APAC: MOSFET, N, 30V, 105A, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:105A; Drain Source Voltage Vds:30V; On Resistance Rds(on):6mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2.25V; Power Dissipation Pd:110W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:105A; Junction to Case Thermal Resistance A:1.32°C/W; On State resistance @ Vgs = 10V:6ohm; Package / Case:TO-220AB; Power Dissipation Pd:110W; Power Dissipation Pd:110W; Pulse Current Idm:420A; Termination Type:Through Hole; Voltage Vds Typ:30V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:2.25V

***emi: N-Channel PowerTrench® MOSFET 30V, 114A, 5.3mΩ

***et Europe: Trans MOSFET N-CH 30V 16A 3-Pin(3+Tab) TO-220AB Tube

***r Electronics: Power Field-Effect Transistor, 80A I(D), 30V, 0.0066ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

***rchild Semiconductor: This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS(ON) and fast switching speed.

***ical: Trans MOSFET N-CH 30V 108A Automotive 3-Pin(3+Tab) TO-220AB Rail

***et: Transistor MOSFET N-Channel 30V 75A 3-Pin TO-220AB

***or: PFET, 75A I(D), 30V, 0.007OHM, 1

***peria: N-channel TrenchMOS standard level FET

Market price

부분 #	제조	설명	재고	가격
PSMN1R6-30PL,127 DISTI # 1727-4269-ND	Nexperia	MOSFET N-CH 30V 100A TO220AB RoHS: Compliant Min Qty: 1 Container: Tube	4332In Stock	5000:$1.2515 2500:$1.2704 500:$1.6468 100:$2.0043 50:$2.3526 10:$2.4940 1:$2.7800
PSMN1R6-30PL,127 DISTI # PSMN1R6-30PL,127	Nexperia	Trans MOSFET N-CH 30V 100A 3-Pin(3+Tab) TO-220AB Tube - Rail/Tube (Alt: PSMN1R6-30PL,127) RoHS: Compliant Min Qty: 5000 Container: Tube	Americas - 0	15000:$1.0900 25000:$1.0900 50000:$1.0900 5000:$1.1900 10000:$1.1900
PSMN1R6-30PL,127 DISTI # PSMN1R6-30PL127	Nexperia	Trans MOSFET N-CH 30V 100A 3-Pin(3+Tab) TO-220AB Tube - Bulk (Alt: PSMN1R6-30PL127) RoHS: Not Compliant Min Qty: 266 Container: Bulk	Americas - 0	798:$1.0900 1330:$1.0900 2660:$1.0900 266:$1.1900 532:$1.1900
PSMN1R6-30PL,127 DISTI # PSMN1R6-30PL,127	Nexperia	Trans MOSFET N-CH 30V 100A 3-Pin(3+Tab) TO-220AB Tube (Alt: PSMN1R6-30PL,127) RoHS: Compliant Min Qty: 1 Container: Tube	Europe - 0	1000:€1.2200 500:€1.4700 250:€1.8700 100:€1.9200 10:€2.4800 1:€3.4600
PSMN1R6-30PL DISTI # 13T9539	Nexperia	MOSFET,N CHANNEL,30V,100A,TO-220AB,Transistor Polarity:N Channel,Continuous Drain Current Id:100A,Drain Source Voltage Vds:30V,On Resistance Rds(on):0.0014ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:1.7V,MSL:- RoHS Compliant: Yes	1012	5000:$1.0200 2500:$1.0600 1000:$1.3000 500:$1.4600 100:$1.5800 10:$1.9700 1:$2.3100
PSMN1R6-30PL,127 DISTI # 771-PSMN1R6-30PL,127	Nexperia	MOSFET N-CH 30V 1.7 mOhm Logic Level MOSFET RoHS: Compliant	0
PSMN1R6-30PL127	NXP Semiconductors	Now Nexperia PSMN1R6-30PL - Power Field-Effect Transistor, 100A I(D), 30V, 0.0021ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB RoHS: Not Compliant	9094	1000:$1.2400 500:$1.3000 100:$1.3600 25:$1.4100 1:$1.5200
PSMN1R6-30PL	NXP Semiconductors		1240
PSMN1R6-30PL DISTI # 1845637	Nexperia	MOSFET,N CH,30V,100A,TO-220AB	1143	500:£1.2700 250:£1.4500 100:£1.6300 10:£1.8200 1:£2.8100
PSMN1R6-30PL DISTI # 1845637	Nexperia	MOSFET,N CH,30V,100A,TO-220AB RoHS: Compliant	1012	250:$2.0300 100:$2.2100 25:$2.4600 1:$2.7300

영상	부분 #	설명
	Mfr.#: PSMN1R5-30BLEJ OMO.#: OMO-PSMN1R5-30BLEJ	MOSFET N-channel 30 V 1.5 mo FET
	Mfr.#: PSMN1R7-60BS,118 OMO.#: OMO-PSMN1R7-60BS-118	MOSFET Std N-chanMOSFET
	Mfr.#: PSMN1R0-40YSHX OMO.#: OMO-PSMN1R0-40YSHX	MOSFET PSMN1R0-40YSH/SOT1023/4 LEADS
	Mfr.#: PSMN1R2-30YLDX OMO.#: OMO-PSMN1R2-30YLDX	MOSFET N-CH 30V 1.2 mOhm logic level MOSFET
	Mfr.#: PSMN1R6-60CLJ OMO.#: OMO-PSMN1R6-60CLJ-NEXPERIA	MOSFET N-CH 60V D2PAK
	Mfr.#: PSMN1R2-25YLC OMO.#: OMO-PSMN1R2-25YLC-1190	LOGIC-LEVEL MOSFET N-CH. 25V 100A SOT669, RL
	Mfr.#: PSMN1R5-30BLE118 OMO.#: OMO-PSMN1R5-30BLE118-1190	Now Nexperia PSMN1R5-30BLE - Power Field-Effect Transistor, 120A I(D), 30V, 0.00185ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
	Mfr.#: PSMN1R7-60BS118 OMO.#: OMO-PSMN1R7-60BS118-1190	신규 및 오리지널
	Mfr.#: PSMN1R0-30YLC,115 OMO.#: OMO-PSMN1R0-30YLC-115-NEXPERIA	IGBT Transistors MOSFET N-CH 30 V 1.15 mOhms LOGIC LEVEL MOSFET
	Mfr.#: PSMN1R0-30YLC,115-CUT TAPE OMO.#: OMO-PSMN1R0-30YLC-115-CUT-TAPE-1190	신규 및 오리지널

PSMN1R6-30PL

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes