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BSC030N03LSGATMA1

BSC030N03LSGATMA1
Mfr. #:
BSC030N03LSGATMA1
제조사:
Infineon Technologies
설명:
MOSFET N-CH 30V 100A TDSON-8
수명 주기:
이 제조업체의 새 제품입니다.
데이터 시트:
BSC030N03LSGATMA1 데이터 시트
배달:
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ECAD Model:
제품 속성
속성 값
제조사
인피니언 테크놀로지스
제품 카테고리
FET - 단일
시리즈
옵티모스
포장
Digi-ReelR 대체 패키징
부분 별칭
BSC030N03LS BSC030N03LSGXT G SP000237661
장착 스타일
SMD/SMT
상표명
옵티모스
패키지 케이스
8-PowerTDFN
기술
시
작동 온도
-55°C ~ 150°C (TJ)
장착형
표면 실장
채널 수
1 Channel
공급자-장치-패키지
PG-TDSON-8
FET형
MOSFET N-채널, 금속 산화물
파워맥스
69W
트랜지스터형
1 N-Channel
드레인-소스 전압 Vdss
30V
입력-커패시턴스-Ciss-Vds
4300pF @ 15V
FET 기능
로직 레벨 게이트
Current-Continuous-Drain-Id-25°C
23A (Ta), 100A (Tc)
Rds-On-Max-Id-Vgs
3 mOhm @ 30A, 10V
Vgs-th-Max-Id
2.2V @ 250μA
Gate-Charge-Qg-Vgs
55nC @ 10V
트랜지스터 극성
N-채널
Tags
BSC030N03LSG, BSC030N03L, BSC030N03, BSC030N0, BSC030N, BSC030, BSC03, BSC0, BSC
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
N-Channel 30 V 3 mOhm OptiMOS™3 Power-MOSFET - PG-TDSON-8
***ment14 APAC
MOSFET, N CH, 100A, 30V, PG-TDSON-8; Transistor Polarity:N Channel; Continuous Drain Current Id:100A; Drain Source Voltage Vds:30V; On Resistance Rds(on):2.5mohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:69W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:PG-TSDSON; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:100A; Power Dissipation Pd:69W; Transistor Type:Power MOSFET; Voltage Vgs Max:20V
***ineon SCT
Ultra low gate and output charge, together with lowest on-state resistance in small footprint packages, make OptiMOS™ 25V the best choice for the demanding requirements of voltage regulator solutions in servers, datacom and telecom applications, PG-TDSON-8, RoHS
***ineon
With the new OptiMOS 30V product family, Infineon sets new standards in power density and energy efficiency for discrete power MOSFETs and system in package. | Summary of Features: Ultra low gate and output charge; Lowest on-state resistance in small footprint packages; Easy to design in | Benefits: Increased battery lifetime; Improved EMI behavior making external snubber networks obsolete; Saving costs; Saving space; Reducing power losses | Target Applications: Onboard charger; Notebook; Mainboard; DC-DC; VRD/VRM; Motor control; LED
부분 # 제조 설명 재고 가격
BSC030N03LSGATMA1
DISTI # V72:2272_06384550		Infineon Technologies AGTrans MOSFET N-CH 30V 23A 8-Pin TDSON EP T/R
RoHS: Compliant		3707
  • 3000:$0.3750
  • 1000:$0.3789
  • 500:$0.4630
  • 250:$0.5154
  • 100:$0.5212
  • 25:$0.6420
  • 10:$0.6498
  • 1:$0.7405
BSC030N03LSGATMA1
DISTI # BSC030N03LSGATMA1CT-ND		Infineon Technologies AGMOSFET N-CH 30V 100A TDSON-8
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		309In Stock
  • 1000:$0.4886
  • 500:$0.6189
  • 100:$0.7981
  • 10:$1.0100
  • 1:$1.1400
BSC030N03LSGATMA1
DISTI # BSC030N03LSGATMA1DKR-ND		Infineon Technologies AGMOSFET N-CH 30V 100A TDSON-8
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		309In Stock
  • 1000:$0.4886
  • 500:$0.6189
  • 100:$0.7981
  • 10:$1.0100
  • 1:$1.1400
BSC030N03LSGATMA1
DISTI # BSC030N03LSGATMA1TR-ND		Infineon Technologies AGMOSFET N-CH 30V 100A TDSON-8
RoHS: Compliant
Min Qty: 5000
Container: Tape & Reel (TR)		On Order
  • 5000:$0.4206
BSC030N03LSGATMA1
DISTI # 31273903		Infineon Technologies AGTrans MOSFET N-CH 30V 23A 8-Pin TDSON EP T/R
RoHS: Compliant		3707
  • 3000:$0.3750
  • 1000:$0.3789
  • 500:$0.4630
  • 250:$0.5154
  • 100:$0.5212
  • 25:$0.6420
  • 20:$0.6498
BSC030N03LSGXT/IBM
DISTI # BSC030N03LSGATMA1		Infineon Technologies AGTrans MOSFET N-CH 30V 23A 8-Pin TDSON EP - Tape and Reel (Alt: BSC030N03LSGATMA1)
RoHS: Compliant
Min Qty: 5000
Container: Reel		Americas - 30000
  • 5000:$0.4119
  • 10000:$0.4109
  • 20000:$0.4099
  • 30000:$0.4089
  • 50000:$0.4069
BSC030N03LSGATMA1
DISTI # 60R2485		Infineon Technologies AGMOSFET, N CHANNEL, 30V, 100A, PG-TSDSON,Transistor Polarity:N Channel,Continuous Drain Current Id:100A,Drain Source Voltage Vds:30V,On Resistance Rds(on):0.0025ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:1V RoHS Compliant: Yes4606
  • 1:$0.9500
  • 10:$0.8050
  • 100:$0.6190
  • 500:$0.5470
  • 1000:$0.4320
BSC030N03LS G
DISTI # 726-BSC030N03LS-G		Infineon Technologies AGMOSFET N-Ch 30V 100A TDSON-8 OptiMOS 3
RoHS: Compliant		4848
  • 1:$0.9500
  • 10:$0.8050
  • 100:$0.6190
  • 500:$0.5470
  • 1000:$0.4320
BSC030N03LSGATMA1
DISTI # 726-BSC030N03LSGATMA		Infineon Technologies AGMOSFET N-Ch 30V 100A TDSON-8 OptiMOS 3
RoHS: Compliant		4892
  • 1:$0.9500
  • 10:$0.8050
  • 100:$0.6190
  • 500:$0.5470
  • 1000:$0.4320
BSC030N03LSGATMA1Infineon Technologies AGPower Field-Effect Transistor, 23A I(D), 30V, 0.0047ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
RoHS: Compliant		500
  • 1000:$0.3700
  • 500:$0.3900
  • 100:$0.4000
  • 25:$0.4200
  • 1:$0.4500
BSC030N03LSGATMA1
DISTI # 8259112P		Infineon Technologies AGMOSFET N-CH 23A 30V OPTIMOS3 TDSON8EP, RL1700
  • 100:£0.2570
BSC030N03LSGATMA1
DISTI # BSC030N03LSGATMA1		Infineon Technologies AGTransistor: N-MOSFET,unipolar,30V,98A,69W,PG-TDSON-82739
  • 1:$0.6732
  • 3:$0.5972
  • 10:$0.5016
  • 100:$0.4499
  • 1000:$0.4190
BSC030N03LSGATMA1
DISTI # C1S322000606399		Infineon Technologies AGMOSFETs
RoHS: Compliant		3707
  • 250:$0.5326
  • 100:$0.5342
  • 25:$0.6523
  • 10:$0.6551
BSC030N03LSGATMA1
DISTI # 1775436		Infineon Technologies AGMOSFET, N CH, 100A, 30V, PG-TDSON-8
RoHS: Compliant		4606
  • 1:$1.5100
  • 10:$1.2800
  • 100:$0.9800
  • 500:$0.8660
  • 1000:$0.6840
  • 5000:$0.6130
BSC030N03LSGATMA1
DISTI # 1775436		Infineon Technologies AGMOSFET, N CH, 100A, 30V, PG-TDSON-8
RoHS: Compliant		4606
  • 5:£0.6060
  • 25:£0.5490
  • 100:£0.4120
  • 250:£0.3690
  • 500:£0.3260
영상 부분 # 설명
BSC030N04NS G

Mfr.#: BSC030N04NS G

OMO.#: OMO-BSC030N04NS-G

 MOSFET N-Ch 40V 100A TDSON-8 OptiMOS 3
BSC030N03MSGATMA1

Mfr.#: BSC030N03MSGATMA1

OMO.#: OMO-BSC030N03MSGATMA1

 MOSFET N-Ch 30V 100A TDSON-8 OptiMOS 3M
BSC030N03LS G

Mfr.#: BSC030N03LS G

OMO.#: OMO-BSC030N03LS-G

 MOSFET N-Ch 30V 100A TDSON-8 OptiMOS 3
BSC030N03LS G

Mfr.#: BSC030N03LS G

OMO.#: OMO-BSC030N03LS-G-1190

 Trans MOSFET N-CH 30V 23A 8-Pin TDSON T/R (Alt: BSC030N03LS G)
BSC030N03LSG

Mfr.#: BSC030N03LSG

OMO.#: OMO-BSC030N03LSG-1190

 Power Field-Effect Transistor, 23A I(D), 30V, 0.0047ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
BSC030N03MS G

Mfr.#: BSC030N03MS G

OMO.#: OMO-BSC030N03MS-G-1190

 Trans MOSFET N-CH 30V 21A 8-Pin TDSON EP
BSC030N03MSG

Mfr.#: BSC030N03MSG

OMO.#: OMO-BSC030N03MSG-1190

 신규 및 오리지널
BSC030N03SL

Mfr.#: BSC030N03SL

OMO.#: OMO-BSC030N03SL-1190

 신규 및 오리지널
BSC030N04NS G

Mfr.#: BSC030N04NS G

OMO.#: OMO-BSC030N04NS-G-1190

 MOSFET N-Ch 40V 100A TDSON-8 OptiMOS 3
BSC030N04NSGATMA1

Mfr.#: BSC030N04NSGATMA1

OMO.#: OMO-BSC030N04NSGATMA1-INFINEON-TECHNOLOGIES

 MOSFET N-CH 40V 100A TDSON-8
유효성
재고:
Available
주문 시:
4000
수량 입력:
BSC030N03LSGATMA1의 현재 가격은 참고용이며 최상의 가격을 원하시면 판매팀 [email protected]으로 문의 또는 다이렉트 이메일을 보내주십시오.
참고 가격(USD)
수량
단가
내선 가격
1
US$0.56
US$0.56
10
US$0.53
US$5.27
100
US$0.50
US$49.95
500
US$0.47
US$235.90
1000
US$0.44
US$444.00
2021년부터 반도체 공급 부족으로 인해 아래 가격은 2021년 이전 정상 가격입니다. 확인을 위해 문의를 보내주세요.
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