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IPD60R600P7SAUMA1

IPD60R600P7SAUMA1
Mfr. #:
IPD60R600P7SAUMA1
제조사:
Infineon Technologies
설명:
MOSFET CONSUMER
수명 주기:
이 제조업체의 새 제품입니다.
데이터 시트:
IPD60R600P7SAUMA1 데이터 시트
배달:
DHL FedEx Ups TNT EMS
지불:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
추가 정보:
IPD60R600P7SAUMA1 추가 정보
제품 속성
속성 값
제조사:
인피니언
제품 카테고리:
MOSFET
RoHS:
Y
기술:
시
장착 스타일:
SMD/SMT
패키지/케이스:
TO-252-3
채널 수:
1 Channel
트랜지스터 극성:
N-채널
Vds - 드레인 소스 항복 전압:
600 V
Id - 연속 드레인 전류:
6 A
Rds On - 드레인 소스 저항:
490 mOhms
Vgs th - 게이트 소스 임계 전압:
3 V
Vgs - 게이트 소스 전압:
20 V
Qg - 게이트 차지:
9 nC
최소 작동 온도:
- 40 C
최대 작동 온도:
+ 150 C
Pd - 전력 손실:
30 W
구성:
하나의
채널 모드:
상승
상표명:
쿨모스
포장:
릴
시리즈:
CoolMOS P7
트랜지스터 유형:
1 N-Channel
상표:
인피니언 테크놀로지스
가을 시간:
7 ns
습기에 민감한:
네
상품 유형:
MOSFET
상승 시간:
6 ns
공장 팩 수량:
2500
하위 카테고리:
MOSFET
일반적인 끄기 지연 시간:
37 ns
일반적인 켜기 지연 시간:
7 ns
부품 번호 별칭:
IPD60R600P7S SP001658286
단위 무게:
0.011993 oz
Tags
IPD60R600P7S, IPD60R600P7, IPD60R600P, IPD60R60, IPD60R6, IPD60R, IPD60, IPD6, IPD
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
Single N-Channel 650V 600 mOhm 9 nC CoolMOS™ Power Mosfet - DPAK
***ical
Trans MOSFET N-CH 600V 6A 3-Pin(2+Tab) DPAK T/R
***i-Key
MOSFET N-CH 600V 6A TO252-3
***ark
Mosfet, N-Ch, 600V, 6A, 30W, To-252; Transistor Polarity:n Channel; Continuous Drain Current Id:6A; Drain Source Voltage Vds:600V; On Resistance Rds(On):0.49Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:3.5V; Power Rohs Compliant: Yes
***ment14 APAC
Prices include import duty and tax. MOSFET, N-CH, 600V, 6A, 30W, TO-252; Transistor Polarity:N Channel; Continuous Drain Current Id:6A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.49ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3.5V; Power Dissipation Pd:30W; Transistor Case Style:TO-252; No. of Pins:3Pins; Operating Temperature Max:150°C; Product Range:CoolMOS P7 Series; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018)
***nell
MOSFET CAN N, 600V, 6A, 30W, TO-252; Polarità Transistor:Canale N; Corrente Continua di Drain Id:6A; Tensione Drain Source Vds:600V; Resistenza di Attivazione Rds(on):0.49ohm; Tensione Vgs di Misura Rds(on):10V; Tensione di Soglia Vgs:3.5V; Dissipazione di Potenza Pd:30W; Modello Case Transistor:TO-252; No. di Pin:3Pin; Temperatura di Esercizio Max:150°C; Gamma Prodotti:CoolMOS P7 Series; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):MSL 1 - Non Limitata; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (27-Jun-2018)
***ineon
The 600V CoolMOS P7 is the successor to the 600V CoolMOS P6 series. It continues to balance the need for high efficiency against the ease-of-use in the design process. The best-in-class R onxA and the inherently low gate charge (Q G) of the CoolMOS 7th generation platform ensure its high efficiency. | Summary of Features: 600V P7 enables excellent FOM R DS(on)xE oss andR DS(on)xQ G | Benefits: Excellent FOMs R DS(on)xQ G/R DS(on)xE oss enable higher efficiency | Target Applications: TV power supply; Industrial SMPS; Server; Telecom; Lighting
600V CoolMOS P7 MOSFETs
Infineon 600V CoolMOS P7 MOSFETs are 7th generation devices and utilize revolutionary technology for high voltage power MOSFETs. The transistors are designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. The 600V CoolMOS P7 combines the benefits of a fast switching SJ MOSFET with excellent ease of use. The 600V P7 feature very low ringing tendency, outstanding robustness of body diode against hard commutation and excellent ESD capability. Extremely low switching and conduction losses make switching applications even more efficient, compact and cooler.
CoolMOS™ 7 Superjunction MOSFETs
Infineon Technologies CoolMOS™ 7 Superjunction MOSFETs set new standards for energy efficiency, power density and ease of use. CoolMOS 7 technology is optimized for specific applications with innovative package concepts and various technologies. CoolMOS 7 MOSFETS are ideal for applications like making electric vehicle charging stations smaller with higher outputs resulting in faster car charging. Thanks to CoolMOS 7, new generations of adapters and chargers are smaller, lighter and more efficient. With CoolMOS 7, engineers can make renewable energy systems cheaper and more efficient.
CoolMOS™ Power Transistors
Infineon CoolMOS™ Power Transistors use the revolutionary CoolMOS™ technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS™ C6 and E6 power transistor series combine the experience of the leading SJ MOSFET supplier with high class innovation. The resulting devices provide all the benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, more compact, lighter, and cooler.
CoolMOS™ P7 MOSFETs
Infineon Technologies CoolMOS™ P7 MOSFETs deliver best-in-class price/performance ratio with excellent ease-of-use to address challenges in various applications. The 700V and 800V CoolMOS P7 power MOSFETs have been developed for flyback-based low-power SMPS applications including adapter and charger, lighting, audio SMPS, AUX and industrial power. The 600V CoolMOS P7 power MOSFETs target not only low power but also high-power SMPS applications like solar inverters, server, telecomand EV charging stations. The P7 MOSFETs are fully optimized for hard- and soft-switching topologies. 
부분 # 제조 설명 재고 가격
IPD60R600P7SAUMA1
DISTI # 33694187		Infineon Technologies AGTrans MOSFET N-CH 600V 6A T/R2500
  • 2500:$0.4844
IPD60R600P7SAUMA1
DISTI # IPD60R600P7SAUMA1TR-ND		Infineon Technologies AGMOSFET N-CH 600V 6A TO252-3
RoHS: Compliant
Min Qty: 2500
Container: Tape & Reel (TR)		On Order
  • 25000:$0.2848
  • 12500:$0.2923
  • 5000:$0.3035
  • 2500:$0.3260
IPD60R600P7SAUMA1
DISTI # IPD60R600P7SAUMA1CT-ND		Infineon Technologies AGMOSFET N-CH 600V 6A TO252-3
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		Temporarily Out of Stock
  • 1000:$0.3705
  • 500:$0.4631
  • 100:$0.5858
  • 10:$0.7640
  • 1:$0.8700
IPD60R600P7SAUMA1
DISTI # IPD60R600P7SAUMA1DKR-ND		Infineon Technologies AGMOSFET N-CH 600V 6A TO252-3
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		Temporarily Out of Stock
  • 1000:$0.3705
  • 500:$0.4631
  • 100:$0.5858
  • 10:$0.7640
  • 1:$0.8700
IPD60R600P7SAUMA1
DISTI # V36:1790_18206086		Infineon Technologies AGTrans MOSFET N-CH 600V 6A T/R0
  • 2500000:$0.2494
  • 1250000:$0.2496
  • 250000:$0.2651
  • 25000:$0.2908
  • 2500:$0.2950
IPD60R600P7SAUMA1
DISTI # IPD60R600P7SAUMA1		Infineon Technologies AGCONSUMER - Tape and Reel (Alt: IPD60R600P7SAUMA1)
RoHS: Compliant
Min Qty: 2500
Container: Reel		Americas - 0
  • 25000:$0.2719
  • 15000:$0.2759
  • 10000:$0.2859
  • 5000:$0.2969
  • 2500:$0.3079
IPD60R600P7SAUMA1
DISTI # SP001658286		Infineon Technologies AGCONSUMER (Alt: SP001658286)
RoHS: Compliant
Min Qty: 2500		Europe - 0
  • 25000:€0.2539
  • 15000:€0.2739
  • 10000:€0.2969
  • 5000:€0.3239
  • 2500:€0.3959
IPD60R600P7SAUMA1
DISTI # IPD60R600P7S		Infineon Technologies AGCONSUMER (Alt: IPD60R600P7S)
RoHS: Compliant
Min Qty: 2500		Asia - 0
    IPD60R600P7SAUMA1
    DISTI # 93AC7117    		Infineon Technologies AGMOSFET, N-CH, 600V, 6A, 30W, TO-252,Transistor Polarity:N Channel,Continuous Drain Current Id:6A,Drain Source Voltage Vds:600V,On Resistance Rds(on):0.49ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3.5V,Power RoHS Compliant: Yes2265
    • 1000:$0.3460
    • 500:$0.3750
    • 250:$0.4040
    • 100:$0.4330
    • 50:$0.5120
    • 25:$0.5920
    • 10:$0.6710
    • 1:$0.7980
    IPD60R600P7SAUMA1
    DISTI # 726-IPD60R600P7SAUMA    		Infineon Technologies AGMOSFET CONSUMER
    RoHS: Compliant    		5254
    • 1:$0.7900
    • 10:$0.6640
    • 100:$0.4290
    • 1000:$0.3430
    IPD60R600P7SAUMA1Infineon Technologies AGSingle N-Channel 650V 600 mOhm 9 nC CoolMOS Power Mosfet - DPAK
    RoHS: Not Compliant    		2500Reel
    • 2500:$0.2950
    IPD60R600P7SAUMA1
    DISTI # XSFP00000131732    		Infineon Technologies AG 
    RoHS: Compliant    		5000 in Stock0 on Order
    • 5000:$0.3933
    • 2500:$0.4214
    IPD60R600P7SAUMA1
    DISTI # 2986469    		Infineon Technologies AGMOSFET, N-CH, 600V, 6A, 30W, TO-252
    RoHS: Compliant    		2265
    • 100:$0.6740
    • 25:$1.0800
    • 5:$1.1800
    IPD60R600P7SAUMA1
    DISTI # 2986469    		Infineon Technologies AGMOSFET, N-CH, 600V, 6A, 30W, TO-2522265
    • 100:£0.4180
    • 10:£0.7100
    • 1:£0.8800
    영상 부분 # 설명
    DRV110APWR

    Mfr.#: DRV110APWR

    OMO.#: OMO-DRV110APWR

    		 Motor / Motion / Ignition Controllers & Drivers PWM Solenoid Controller
    TPS3808G01DBVR

    Mfr.#: TPS3808G01DBVR

    OMO.#: OMO-TPS3808G01DBVR

    		 Supervisory Circuits Programmable-Delay Supervisory
    BZT52C5V1-7-F

    Mfr.#: BZT52C5V1-7-F

    OMO.#: OMO-BZT52C5V1-7-F

    		 Zener Diodes 500mW 5.1V Zener AEC-Q101 Qualified
    D3Z5V1BF-7

    Mfr.#: D3Z5V1BF-7

    OMO.#: OMO-D3Z5V1BF-7

    		 Zener Diodes 400mW 5.08V Zener ZENER DIODE
    MURS160-13-F

    Mfr.#: MURS160-13-F

    OMO.#: OMO-MURS160-13-F

    		 Rectifiers 600V 1A
    BSS138

    Mfr.#: BSS138

    OMO.#: OMO-BSS138

    		 MOSFET SOT-23 N-CH LOGIC
    TPS3808G01DBVR

    Mfr.#: TPS3808G01DBVR

    OMO.#: OMO-TPS3808G01DBVR-TEXAS-INSTRUMENTS

    		 Supervisory Circuits Programmable-Delay Supervisory
    D3Z5V1BF-7

    Mfr.#: D3Z5V1BF-7

    OMO.#: OMO-D3Z5V1BF-7-DIODES

    		 Zener Diodes Tight Tolerance ZENER DIODE
    BSS138

    Mfr.#: BSS138

    OMO.#: OMO-BSS138-ON-SEMICONDUCTOR

    		 MOSFET N-CH 50V 220MA SOT-23
    DRV110APWR

    Mfr.#: DRV110APWR

    OMO.#: OMO-DRV110APWR-TEXAS-INSTRUMENTS

    		 Motor / Motion / Ignition Controllers & Drivers PWM Solenoid Controlle
    유효성
    재고:
    Available
    주문 시:
    1988
    수량 입력:
    IPD60R600P7SAUMA1의 현재 가격은 참고용이며 최상의 가격을 원하시면 판매팀 [email protected]으로 문의 또는 다이렉트 이메일을 보내주십시오.
    참고 가격(USD)
    수량
    단가
    내선 가격
    1
    US$0.79
    US$0.79
    10
    US$0.66
    US$6.64
    100
    US$0.43
    US$42.90
    1000
    US$0.34
    US$343.00
    2021년부터 반도체 공급 부족으로 인해 아래 가격은 2021년 이전 정상 가격입니다. 확인을 위해 문의를 보내주세요.
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