IRF7450TRPBF

Mfr. #:: IRF7450TRPBF
제조사:: Infineon Technologies
설명:: MOSFET N-CH 200V 2.5A 8-SOIC
수명 주기:: 이 제조업체의 새 제품입니다.
데이터 시트:: IRF7450TRPBF 데이터 시트
배달:: DHL FedEx Ups TNT EMS
지불:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:
추가 정보:: IRF7450TRPBF 추가 정보

제품 속성
속성 값

제조사: 인피니언 테크놀로지스

제품 카테고리: FET - 단일

시리즈: 헥스펫

포장: Digi-ReelR 대체 패키징

단위 무게: 0.017870 oz

장착 스타일: SMD/SMT

패키지 케이스: 8-SOIC (0.154", 3.90mm Width)

기술: 시

작동 온도: -55°C ~ 150°C (TJ)

장착형: 표면 실장

채널 수: 1 Channel

공급자-장치-패키지: 8-SO

구성: 하나의

FET형: MOSFET N-채널, 금속 산화물

파워맥스: 2.5W

트랜지스터형: 1 N-Channel

드레인-소스 전압 Vdss: 200V

입력-커패시턴스-Ciss-Vds: 940pF @ 25V

FET 기능: 기준

Current-Continuous-Drain-Id-25°C: 2.5A (Ta)

Rds-On-Max-Id-Vgs: 170 mOhm @ 1.5A, 10V

Vgs-th-Max-Id: 5.5V @ 250μA

Gate-Charge-Qg-Vgs: 39nC @ 10V

Pd 전력 손실: 2.5 W

최대 작동 온도: + 150 C

최소 작동 온도: - 55 C

가을철: 18 ns

상승 시간: 3 ns

Vgs 게이트 소스 전압: 30 V

Id-연속-드레인-전류: 2.5 A

Vds-드레인-소스-고장-전압: 200 V

Vgs-th-Gate-Source-Threshold-Voltage: 5.5 V

Rds-On-Drain-Source-Resistance: 170 mOhms

트랜지스터 극성: N-채널

일반 꺼짐 지연 시간: 17 ns

일반 켜기 지연 시간: 10 ns

Qg-Gate-Charge: 26 nC

순방향 트랜스컨덕턴스-최소: 2.6 S

채널 모드: 상승

Tags: IRF7450T, IRF7450, IRF745, IRF74, IRF7, IRF

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

IRF7450TRPBF 추가 정보

200-250V HEXFET® Power MOSFETs: Infineon 200-250V HEXFET® Power MOSFETs offer a broad range of MOSFETs in various packages, current and RDS(on) ratings. These 200-250V HEXFET® Power MOSFETs utilize the latest processing techniques to achieve low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that Infineon HEXFET® Power MOSFETs are known for provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.Learn More

Market price

부분 #	제조	설명	재고	가격
IRF7450TRPBF DISTI # 27491384	Infineon Technologies AG	Trans MOSFET N-CH 200V 2.5A 8-Pin SOIC T/R RoHS: Compliant	4000	4000:$0.6667
IRF7450TRPBF DISTI # IRF7450PBFCT-ND	Infineon Technologies AG	MOSFET N-CH 200V 2.5A 8-SOIC RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	7727In Stock	1000:$0.8010 500:$1.0146 100:$1.3083 10:$1.6550 1:$1.8700
IRF7450TRPBF DISTI # IRF7450PBFDKR-ND	Infineon Technologies AG	MOSFET N-CH 200V 2.5A 8-SOIC RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	7727In Stock	1000:$0.8010 500:$1.0146 100:$1.3083 10:$1.6550 1:$1.8700
IRF7450TRPBF DISTI # IRF7450PBFTR-ND	Infineon Technologies AG	MOSFET N-CH 200V 2.5A 8-SOIC RoHS: Compliant Min Qty: 4000 Container: Tape & Reel (TR)	4000In Stock	4000:$0.7258
IRF7450TRPBF DISTI # IRF7450TRPBF	Infineon Technologies AG	Trans MOSFET N-CH 200V 2.5A 8-Pin SOIC T/R - Tape and Reel (Alt: IRF7450TRPBF) RoHS: Compliant Min Qty: 4000 Container: Reel	Americas - 0	4000:$0.5429 8000:$0.5229 16000:$0.5039 24000:$0.4869 40000:$0.4789
IRF7450TRPBF DISTI # 43AC3286	Infineon Technologies AG	MOSFET, N-CH, 200V, 2.5A, SOIC-8,Transistor Polarity:N Channel,Continuous Drain Current Id:2.5A,Drain Source Voltage Vds:200V,On Resistance Rds(on):0.17ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:5.5V,Power RoHS Compliant: Yes	3824	1:$1.5500 10:$1.3200 25:$1.2200 50:$1.1200 100:$1.0200 250:$0.9580 500:$0.8960 1000:$0.7070
IRF7450TRPBF DISTI # 70018907	Infineon Technologies AG	MOSFET,200V,2.5A,170 MOHM,26 NC QG,SO-8 RoHS: Compliant	0	4000:$0.6200
IRF7450TRPBF DISTI # 942-IRF7450TRPBF	Infineon Technologies AG	MOSFET MOSFT 200V 2.5A 170mOhm 26nC RoHS: Compliant	7210	1:$1.5500 10:$1.3200 100:$1.0200 500:$0.8960 1000:$0.7070
IRF7450TRPBF	Infineon Technologies AG	Single N-Channel 200 V 0.17 Ohm 39 nC HEXFET Power Mosfet - SOIC-8 RoHS: Compliant	4000Reel	4000:$0.5550
IRF7450TRPBF DISTI # 2803409	Infineon Technologies AG	MOSFET, N-CH, 200V, 2.5A, SOIC-8 RoHS: Compliant	3824	5:$2.1800 25:$1.9000 100:$1.5500
IRF7450TRPBF DISTI # 2803409	Infineon Technologies AG	MOSFET, N-CH, 200V, 2.5A, SOIC-8 RoHS: Compliant	3824	5:£1.1300 25:£1.0300 100:£0.7970 250:£0.7490 500:£0.7000

관련 상품

영상	부분 #	설명
	Mfr.#: IRF7452TRPBF OMO.#: OMO-IRF7452TRPBF	MOSFET MOSFT 100V 4.5A 60mOhm 33nC
	Mfr.#: IRF7455 OMO.#: OMO-IRF7455-INFINEON-TECHNOLOGIES	MOSFET N-CH 30V 15A 8-SOIC
	Mfr.#: IRF7459TRPBF OMO.#: OMO-IRF7459TRPBF-INFINEON-TECHNOLOGIES	MOSFET N-CH 20V 12A 8-SOIC
	Mfr.#: IRF7452TR OMO.#: OMO-IRF7452TR-INFINEON-TECHNOLOGIES	MOSFET N-CH 100V 4.5A 8-SOIC
	Mfr.#: IRF7455PBF OMO.#: OMO-IRF7455PBF-INFINEON-TECHNOLOGIES	MOSFET N-CH 30V 15A 8-SOIC
	Mfr.#: IRF7456PBF OMO.#: OMO-IRF7456PBF-INFINEON-TECHNOLOGIES	MOSFET N-CH 20V 16A 8-SOIC
	Mfr.#: IRF7456PBF-1 OMO.#: OMO-IRF7456PBF-1-1190	신규 및 오리지널
	Mfr.#: IRF7456TRPBF(PB FREE) OMO.#: OMO-IRF7456TRPBF-PB-FREE--1190	신규 및 오리지널
	Mfr.#: IRF7457TR OMO.#: OMO-IRF7457TR-INFINEON-TECHNOLOGIES	MOSFET N-CH 20V 15A 8-SOIC
	Mfr.#: IRF7457TRPBF OMO.#: OMO-IRF7457TRPBF-INFINEON-TECHNOLOGIES	RF Bipolar Transistors MOSFET MOSFT 20V 15A 7mOhm 28nC

유효성

재고:: Available
주문 시:: 5000
수량 입력:

IRF7450TRPBF의 현재 가격은 참고용이며 최상의 가격을 원하시면 판매팀 [email protected]으로 문의 또는 다이렉트 이메일을 보내주십시오.

참고 가격(USD)

수량
단가
내선 가격

1: ~~US$0.72~~; ~~US$0.72~~

10: ~~US$0.68~~; ~~US$6.82~~

100: ~~US$0.65~~; ~~US$64.65~~

500: ~~US$0.61~~; ~~US$305.30~~

1000: ~~US$0.57~~; ~~US$574.70~~

시작

IRF7450T 3
IRF7450 5
IRF745 50
IRF74 375
IRF7 1262
IRF 8615

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IRF7450TRPBF

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes