SCT2280KEC

SCT2280KEC
Mfr. #:
SCT2280KEC
제조사:
Rohm Semiconductor
설명:
MOSFET MOSFET1200V14A280m OhmSiliconCarbideSiC
수명 주기:
이 제조업체의 새 제품입니다.
데이터 시트:
SCT2280KEC 데이터 시트
배달:
DHL FedEx Ups TNT EMS
지불:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
추가 정보:
SCT2280KEC 추가 정보
제품 속성
속성 값
제조사:
로옴 반도체
제품 카테고리:
MOSFET
RoHS:
Y
기술:
SiC
장착 스타일:
구멍을 통해
패키지/케이스:
TO-247-3
채널 수:
1 Channel
트랜지스터 극성:
N-채널
Vds - 드레인 소스 항복 전압:
1200 V
Id - 연속 드레인 전류:
14 A
Rds On - 드레인 소스 저항:
280 mOhms
Vgs th - 게이트 소스 임계 전압:
1.6 V
Vgs - 게이트 소스 전압:
- 6 V, 22 V
Qg - 게이트 차지:
36 nC
최소 작동 온도:
- 55 C
최대 작동 온도:
+ 175 C
Pd - 전력 손실:
108 W
구성:
하나의
채널 모드:
상승
포장:
튜브
시리즈:
SCT2x
트랜지스터 유형:
1 N-Channel
상표:
로옴 반도체
순방향 트랜스컨덕턴스 - 최소:
1.4 S
가을 시간:
29 ns
상품 유형:
MOSFET
상승 시간:
19 ns
공장 팩 수량:
360
하위 카테고리:
MOSFET
일반적인 끄기 지연 시간:
47 ns
일반적인 켜기 지연 시간:
19 ns
부품 번호 별칭:
SCT2280KE
단위 무게:
1.340411 oz
Tags
SCT228, SCT22, SCT2, SCT
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***Components
SiC N-Channel MOSFET, 14 A, 1200 V, 3-Pin TO-247 ROHM SCT2280KEC
***ical
Trans MOSFET N-CH SiC 1.2KV 14A 3-Pin(3+Tab) TO-247 Tube
***ure Electronics
N-Channel 180 W 1200 V 280 mOhm Flange Mount SiC Power Mosfet - TO-247-3
***et Europe
Trans SiC MOSFET N-CH 1200V 14A 3-Pin TO-247 Tube
***i-Key
MOSFET N-CH 1200V 14A TO-247
***ukat
SiC-N-Ch 1200V 14A 108W 0,364R TO247
***ronik
SiC-N 1200V 14A 280mOhm TO247-3
***
1200V, 10A 280MOHM, T0247 FET
***ark
Mosfet, N Channel, 1.2Kv, 14A, 0R28, To-247-3; Transistor Polarity:n Channel; Continuous Drain Current Id:14A; Drain Source Voltage Vds:1.2Kv; On Resistance Rds(On):0.28Ohm; Rds(On) Test Voltage Vgs:18V; Threshold Voltage Vgs:4V Rohs Compliant: Yes
***ment14 APAC
Prices include import duty and tax. MOSFET, 1200V, 14A, SIC, TO-247; Transistor Polarity:N Channel; Continuous Drain Current Id:14A; Drain Source Voltage Vds:1.2kV; On Resistance Rds(on):0.28ohm; Rds(on) Test Voltage Vgs:18V; Threshold Voltage Vgs:4V; Power Dissipation Pd:108W; Transistor Case Style:TO-247; No. of Pins:3Pins; Operating Temperature Max:175°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (15-Jan-2018); Operating Temperature Min:-55°C
***nell
MOSFET, 1200V, 14A, SIC, TO-247; Polarità Transistor:Canale N; Corrente Continua di Drain Id:14A; Tensione Drain Source Vds:1.2kV; Resistenza di Attivazione Rds(on):0.28ohm; Tensione Vgs di Misura Rds(on):18V; Tensione di Soglia Vgs:4V; Dissipazione di Potenza Pd:108W; Modello Case Transistor:TO-247; No. di Pin:3Pin; Temperatura di Esercizio Max:175°C; Gamma Prodotti:-; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):MSL 1 - Non Limitata; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (15-Jan-2018); Temperatura di Esercizio Min:-55°C
Silicon Carbide (SiC) Power Devices
ROHM Semiconductor SiC Power Devices deliver 10x the dielectric breakdown field strength, 3x the bandgap, and 3x the thermal conductivity of conventional silicon solutions. This translates to lower switching loss, lower ON resistance, and support for high-temperature operation, making it possible to minimize power loss along with module size. SiC also allows designers to use fewer components, further reducing design complexity.
N-Channel SiC Power MOSFETs
ROHM Semiconductor N-Channel SiC (Silicon Carbide) Power MOSFETs feature no tail current during switching, resulting in faster operation and reduced switching loss. In addition, low ON resistance minimizes power dissipation and provides greater energy savings.
Industrial Product Solutions
ROHM Industrial Product Solutions supply a quality lineup of products from passive devices and discretes to ICs and modules, providing total solutions at the system level. The Industrial Product Solutions have achieved high quality, technological capability, and a stable supply of products (over 10 years) creating innovative solutions in a highly integrated production system. These products meet the rapidly evolving needs of the industrial equipment market. ROHM continues to leverage its strengths providing optimized solutions tailored to customer sets.
Electronic Vehicle (EV) Solutions
ROHM Semiconductor Electronic Vehicle (EV) Solutions are designed to contribute to efficiency and improved performance in of state-of-the-art Electronic Vehicles (EV). ROHM offers products optimized for a variety of solutions, with focus on Dedicated EV Blocks, such as the Main Inverter, DC-DC Converter, On-board Charger, and Electric Compressor.
부분 # 제조 설명 재고 가격
SCT2280KEC
DISTI # 30328916
ROHM Semiconductor0210
  • 150:$7.4349
  • 60:$7.7022
  • 30:$7.9101
SCT2280KEC
DISTI # 34023146
ROHM Semiconductor030
  • 3:$10.3148
SCT2280KEC
DISTI # SCT2280KEC-ND
ROHM SemiconductorMOSFET N-CH 1200V 14A TO-247
Min Qty: 1
Container: Tube
3572In Stock
  • 500:$6.5255
  • 100:$7.4938
  • 25:$8.6304
  • 10:$9.0520
  • 1:$10.0200
SCT2280KEC
DISTI # SCT2280KEC
ROHM SemiconductorTrans SiC MOSFET N-CH 1200V 14A 3-Pin TO-247 Tube (Alt: SCT2280KEC)
RoHS: Compliant
Min Qty: 360
Container: Tube
Asia - 0
    SCT2280KEC
    DISTI # SCT2280KEC
    ROHM SemiconductorTrans SiC MOSFET N-CH 1200V 14A 3-Pin TO-247 Tube - Rail/Tube (Alt: SCT2280KEC)
    RoHS: Compliant
    Min Qty: 360
    Container: Tube
    Americas - 0
      SCT2280KEC
      DISTI # 06X0712
      ROHM SemiconductorMOSFET, N CHANNEL, 1.2KV, 14A, 0R28, TO-247-3,Transistor Polarity:N Channel,Continuous Drain Current Id:14A,Drain Source Voltage Vds:1.2kV,On Resistance Rds(on):0.28ohm,Rds(on) Test Voltage Vgs:18V,Threshold Voltage Vgs:4V RoHS Compliant: Yes
      RoHS: Compliant
      291
      • 250:$7.1500
      • 100:$7.4900
      • 50:$8.0600
      • 25:$8.6300
      • 10:$9.0500
      • 1:$10.0100
      SCT2280KECROHM SemiconductorN-Channel 180 W 1200 V 280 mOhm Flange Mount SiC Power Mosfet - TO-247-3
      RoHS: Compliant
      Min Qty: 30
      300Tube
      • 150:$8.4600
      • 120:$8.5400
      • 60:$8.8100
      • 30:$10.5700
      SCT2280KEC
      DISTI # 755-SCT2280KEC
      ROHM SemiconductorMOSFET MOSFET1200V14A280m OhmSiliconCarbideSiC
      RoHS: Compliant
      1041
      • 1:$10.0100
      • 10:$9.0500
      • 25:$8.6300
      • 100:$7.4900
      • 250:$7.1500
      SCT2280KECROHM SemiconductorMOSFET MOSFET1200V14A280m OhmSiliconCarbideSiC
      RoHS: Compliant
      Americas - 180
      • 30:$6.0700
      • 2010:$5.7400
      • 5010:$5.6100
      • 10020:$5.5200
      SCT2280KEC
      DISTI # 1246854
      ROHM SemiconductorSCT2280KEC SiC N-Channel MOSFET, 14 A, 1200 V SCT2280KE, 3-Pin TO-247 ROHM, EA18
      • 1:$9.9690
      • 5:$8.8520
      • 10:$8.4100
      • 25:$8.0070
      • 50:$7.8510
      SCT2280KEC
      DISTI # TMOSP11161
      ROHM SemiconductorSiC-N 1200V 14A 280mOhm TO247-3
      RoHS: Compliant
      Stock DE - 1620Stock HK - 0Stock US - 0
      • 30:$9.6800
      • 60:$9.1300
      • 90:$8.5700
      • 120:$7.7500
      • 180:$7.4700
      SCT2280KEC
      DISTI # SCT2280KEC
      ROHM SemiconductorSiC-N-Ch 1200V 14A 108W 0,364R TO247
      RoHS: Compliant
      23
      • 1:€11.5000
      • 5:€9.5000
      • 10:€8.5000
      • 30:€8.2000
      SCT2280KECROHM SemiconductorN-Channel 180 W 1200 V 280 mOhm Flange Mount SiC Power Mosfet - TO-247-3300
      • 90:$5.8305
      SCT2280KECUROHM Semiconductor 22
      • 1:$8.9432
      • 10:$8.3470
      • 25:$7.7508
      • 100:$7.1546
      • 250:$6.5583
      • 360:$5.9621
      SCT2280KEC
      DISTI # 2345467
      ROHM SemiconductorMOSFET, 1200V, 14A, SIC, TO-247
      RoHS: Compliant
      341
      • 25:$12.9200
      • 10:$13.5500
      • 1:$14.9900
      SCT2280KEC
      DISTI # 2345467
      ROHM SemiconductorMOSFET, 1200V, 14A, SIC, TO-247
      RoHS: Compliant
      306
      • 250:£5.7200
      • 100:£6.1200
      • 50:£6.5900
      • 10:£7.0600
      • 5:£8.1900
      • 1:£8.8000
      SCT2280KEC
      DISTI # XSFT00000032039
      ROHM SEMICONDUCTORN-Channel 180 W 1200 V 280 mOhm Flange Mount SiC Power Mosfet - TO-247-3
      RoHS: Compliant
      150 in Stock0 on Order
      • 30:$9.1600
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      OMO.#: OMO-NJM78L03UA-TE1

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      Aluminum Electrolytic Capacitors - Radial Leaded 450V 100uF 105C 12k Hour Radial
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      Mfr.#: HCPL-3180-300E

      OMO.#: OMO-HCPL-3180-300E-BROADCOM

      High Speed Optocouplers 2.0A IGBT Gate Drive
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      Mfr.#: OAR1R010JLF

      OMO.#: OMO-OAR1R010JLF-1086

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      RDER73A104K5B1H03B

      Mfr.#: RDER73A104K5B1H03B

      OMO.#: OMO-RDER73A104K5B1H03B-MURATA-ELECTRONICS

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      RC1210FR-072R2L

      Mfr.#: RC1210FR-072R2L

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      Film Capacitors 0.0022uF 630volts 5%
      유효성
      재고:
      Available
      주문 시:
      1984
      수량 입력:
      SCT2280KEC의 현재 가격은 참고용이며 최상의 가격을 원하시면 판매팀 [email protected]으로 문의 또는 다이렉트 이메일을 보내주십시오.
      참고 가격(USD)
      수량
      단가
      내선 가격
      1
      US$10.01
      US$10.01
      10
      US$9.05
      US$90.50
      25
      US$8.63
      US$215.75
      100
      US$7.49
      US$749.00
      250
      US$7.15
      US$1 787.50
      시작
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