FDMC86340ET80

Mfr. #:: FDMC86340ET80
제조사:: ON Semiconductor / Fairchild
설명:: MOSFET FET 80V 6.5 MOHM PQFN33
수명 주기:: 이 제조업체의 새 제품입니다.
데이터 시트:: FDMC86340ET80 데이터 시트
배달:: DHL FedEx Ups TNT EMS
지불:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:
추가 정보:: FDMC86340ET80 추가 정보

제품 속성
속성 값

제조사:: 온세미컨덕터

제품 카테고리:: MOSFET

RoHS:: Y

기술:: 시

장착 스타일:: SMD/SMT

패키지/케이스:: Power-33-8

채널 수:: 1 Channel

트랜지스터 극성:: N-채널

Vds - 드레인 소스 항복 전압:: 80 V

Id - 연속 드레인 전류:: 48 A

Rds On - 드레인 소스 저항:: 8.5 mOhms

Vgs th - 게이트 소스 임계 전압:: 2 V

Vgs - 게이트 소스 전압:: 20 V

Qg - 게이트 차지:: 31 nC

최소 작동 온도:: - 55 C

최대 작동 온도:: + 150 C

Pd - 전력 손실:: 54 W

구성:: 하나의

상표명:: PowerTrench 파워 클립

포장:: 릴

키:: 0.8 mm

길이:: 3.3 mm

시리즈:: FDMC86340ET80

트랜지스터 유형:: 1 N-Channel

너비:: 3.3 mm

상표:: 온세미컨덕터 / 페어차일드

순방향 트랜스컨덕턴스 - 최소:: 36 S

가을 시간:: 5.1 ns

상품 유형:: MOSFET

상승 시간:: 7.9 ns

공장 팩 수량:: 3000

하위 카테고리:: MOSFET

일반적인 끄기 지연 시간:: 23 ns

일반적인 켜기 지연 시간:: 20 ns

단위 무게:: 0.005386 oz

Tags: FDMC863, FDMC86, FDMC8, FDMC, FDM

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

FDMC86340ET80 설명

***ark: PT7 N-ch 80/20V Power Trench MOSFET - 8LD, PQFN, POWERCLIP SINGLE, JEDEC, MO-240, 3.3X3.3 MM

***emi: N-Channel Shielded Gate Power Trench® MOSFET 80V, 68A, 6.5mΩ

***Yang: Trans MOSFET N-CH 80V 14A 8-Pin PQFN T/R - Tape and Reel

***r Electronics: Power Field-Effect Transistor, 68A I(D), 80V, 0.0065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-240BA

***rchild Semiconductor: This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that incorporates Shielded Gate technology. This process has been optimized for the on-state resistance and yet maintain superior switching performance.

***ical: Trans MOSFET N-CH 80V 82A Automotive 8-Pin TDSON EP T/R

***ark: MOSFET, N-CH, 80V, 82A, TDSON; Channel Type:N Channel; Drain Source Voltage Vds:80V; Continuous Drain Current Id:82A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3V; Qualification:- RoHS Compliant: Yes

***nell: MOSFET, N-CH, 80V, 82A, TDSON-8; Transistor Polarity: N Channel; Continuous Drain Current Id: 82A; Drain Source Voltage Vds: 80V; On Resistance Rds(on): 0.0052ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3V; Power Dissipation Pd: 74W; Transistor Case Style: TDSON; No. of Pins: 8Pins; Operating Temperature Max: 150°C; Product Range: OptiMOS 5 Series; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (27-Jun-2018)

***ineon: OptiMOS 5 80V, Infineons latest generation of power MOSFETs, are especially designed for synchronous rectification in telecom and server power supplies. In addition, these devices can also be utilized in other industrial applications such as solar, low voltage drives and adapters. Within seven different packages, the new OptiMOS 5 80V MOSFETs offer the industrys lowest R DS(on). | Summary of Features: Optimized for synchronous rectification; Ideal for high switching frequency; Output capacitance reduction of up to 44%; R DS(on) reduction of up to 44% | Benefits: Highest system efficiency; Reduced switching and conduction losses; Less paralleling required; Increased power density; Low voltage overshoot | Target Applications: Telecom; Server; Solar; Low voltage drives; Light electric vehicles; Adapter

***ineon SCT: Trans MOSFET N-CH 80V 74A Automotive 8-Pin TDSON EP T/R, PG-TDSON-8, RoHS

***nell: MOSFET, N-CH, 80V, 74A, TDSON; Transistor Polarity: N Channel; Continuous Drain Current Id: 74A; Drain Source Voltage Vds: 80V; On Resistance Rds(on): 0.0062ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3V; Power Dissipation Pd: 69W; Transistor Case Style: TDSON; No. of Pins: 8Pins; Operating Temperature Max: 150°C; Product Range: OptiMOS 5 Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)

***ineon: OptiMOS 5 80V, Infineons latest generation of power MOSFETs, are especially designed for synchronous rectification in telecom and server power supplies. In addition, these devices can also be utilized in other industrial applications such as solar, low voltage drives and adapters. Within seven different packages, the new OptiMOS 5 80V MOSFETs offer the industrys lowest R DS(on). | Summary of Features: Optimized for synchronous rectification; Ideal for high switching frequency; Output capacitance reduction of up to 44%; R DS(on) reduction of up to 44% | Benefits: Highest system efficiency; Reduced switching and conduction losses; Less paralleling required; Increased power density; Low voltage overshoot | Target Applications: Telecom; Server; Solar; Low voltage drives; Light electric vehicles; Adapter

***ure Electronics: N-Channel 80 V 6.2 mOhm 69.4 W SMT TrenchFET Mosfet - PowerPAK SO-8

***ical: Trans MOSFET N-CH 80V 60A 5-Pin(4+Tab) PowerPAK SO EP T/R

***nell: MOSFET, N-CH, 80V, PPAK-SO8; Transistor Polarity:N Channel; Continuous Drain Current Id:60A; Drain Source Voltage Vds:80V; On Resistance Rds(on):0.0051ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:69.4W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:PowerPAK SO; No. of Pins:5; MSL:MSL 1 - Unlimited; Operating Temperature Range:-55°C to +150°C

***ical: Trans MOSFET N-CH 80V 80A Automotive 3-Pin(2+Tab) D2PAK T/R

***nell: MOSFET, N-CH, 80V, 80A, TO-263-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 80A; Drain Source Voltage Vds: 80V; On Resistance Rds(on): 0.0043ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3V; Power Dissipation Pd: 125W; Transistor Case Style: TO-263; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: OptiMOS 5 Series; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (27-Jun-2018)

***ineon SCT: Industry leading power MOSFET technology for telecom and server applications with OptiMOS™ 5 80V in D2PAK package, PG-TO263-3, RoHS

***ineon: OptiMOS 5 80V, Infineons latest generation of power MOSFETs, are especially designed for synchronous rectification in telecom and server power supplies. In addition, these devices can also be utilized in other industrial applications such as solar, low voltage drives and adapters. Within seven different packages, the new OptiMOS 5 80V MOSFETs offer the industrys lowest R DS(on). | Summary of Features: Optimized for synchronous rectification; Ideal for high switching frequency; Output capacitance reduction of up to 44%; R DS(on) reduction of up to 44% | Benefits: Highest system efficiency; Reduced switching and conduction losses; Less paralleling required; Increased power density; Low voltage overshoot | Target Applications: Telecom; Server; Solar; Low voltage drives; Light electric vehicles; Adapter

***ure Electronics: N-Channel 80 V 8.9 mOhm 83 W SMT TrenchFET Power Mosfet - PowerPAK SO-8

***ical: Trans MOSFET N-CH 80V 60A 8-Pin PowerPAK SO EP T/R

***et: N-CHANNEL 80-V (D-S) POWERPAK SO-8 THUNDERFET MOSFET, 6.3 MO

***ark: MOSFET, N-CH, 80V, 60A, POWERPAKSO-8

***nell: MOSFET, N-CH, 80V, 60A, POWERPAKSO-8; Transistor Polarity:N Channel; Continuous Drain Current Id:60A; Drain Source Voltage Vds:80V; On Resistance Rds(on):0.0052ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:83W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:PowerPAK SO; No. of Pins:8; MSL:MSL 1 - Unlimited

***et Europe: Trans MOSFET N-CH 80V 23.8A 8-Pin PowerPAK SO T/R

***mal: N-Channel 80V PowerPak SO-8 ThunderFET MOSFET 5.5m

***el Electronic: B RAM 512 x 12 Bit EPROM 8-Bit CMOS Microcontroller - SOIC-8

***enic: 80V 60A 6.25W 5.5m´Î@10V20A 2.8V@250Ã×A N Channel PowerPAK SO-8 MOSFETs ROHS

***ure Electronics: N Chan, 80V, 60a, 5.5 mOhms @ 10V, PowerPAK® SO-8

***nell: MOSFET, N-CH, 80V, 60A, POWERPAKSO-8; Transistor Polarity:N Channel; Continuous Drain Current Id:60A; Drain Source Voltage Vds:80V; On Resistance Rds(on):0.0046ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:104W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:PowerPAK SO; No. of Pins:8; MSL:MSL 1 - Unlimited

***S: French Electronic Distributor since 1988

FDMC86340ET80 추가 정보

PowerTrench® MOSFETs: ON Semiconductor PowerTrench® MOSFETs offer a broad portfolio of MOSFETs in the industry. These MOSFETs offer both N-Channel and P-Channel versions that are optimized for low RDS(ON) switching performance and ruggedness. Typical applications include load switches, primary switching, mobile computing, DC-DC converters, and synchronous rectifiers.

Market price

부분 #	제조	설명	재고	가격
FDMC86340ET80 DISTI # V72:2272_06337926	ON Semiconductor	PT7 N-CH 80/20V POWER TRENCH M	2044	1000:$1.1908 500:$1.2034 250:$1.3867 100:$1.4011 25:$1.7629 10:$1.7807 1:$2.3234
FDMC86340ET80 DISTI # V36:1790_06337926	ON Semiconductor	PT7 N-CH 80/20V POWER TRENCH M	0	3000000:$0.8808 1500000:$0.8820 300000:$0.9384 30000:$1.0180 3000:$1.0300
FDMC86340ET80 DISTI # FDMC86340ET80CT-ND	ON Semiconductor	MOSFET N-CH 80V 48A POWER33 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	Limited Supply - Call
FDMC86340ET80 DISTI # FDMC86340ET80DKR-ND	ON Semiconductor	MOSFET N-CH 80V 48A POWER33 RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	Limited Supply - Call
FDMC86340ET80 DISTI # FDMC86340ET80TR-ND	ON Semiconductor	MOSFET N-CH 80V 48A POWER33 RoHS: Compliant Min Qty: 3000 Container: Tape & Reel (TR)	Temporarily Out of Stock	3000:$1.0301
FDMC86340ET80 DISTI # 31339539	ON Semiconductor	PT7 N-CH 80/20V POWER TRENCH M	1944	7:$2.3234
FDMC86340ET80 DISTI # FDMC86340ET80	ON Semiconductor	Trans MOSFET N-CH 80V 14A 8-Pin PQFN T/R (Alt: FDMC86340ET80) RoHS: Compliant Min Qty: 3000 Container: Tape and Reel	Europe - 0	30000:€0.9569 18000:€1.0029 12000:€1.1039 6000:€1.2919 3000:€1.5789
FDMC86340ET80 DISTI # FDMC86340ET80	ON Semiconductor	Trans MOSFET N-CH 80V 14A 8-Pin PQFN T/R - Tape and Reel (Alt: FDMC86340ET80) RoHS: Compliant Min Qty: 3000 Container: Reel	Americas - 0	30000:$0.8969 18000:$0.9189 12000:$0.9309 6000:$0.9429 3000:$0.9489
FDMC86340ET80 DISTI # 512-FDMC86340ET80	ON Semiconductor	MOSFET FET 80V 6.5 MOHM PQFN33 RoHS: Compliant	1040	1:$2.1300 10:$1.8100 100:$1.4500 500:$1.2700 1000:$1.0500 3000:$0.9820 6000:$0.9450

영상	부분 #	설명
	Mfr.#: SST26VF032B-104I/SM OMO.#: OMO-SST26VF032B-104I-SM	NOR Flash 32Mb 2.7V-3.6V SQI Flash Memory
	Mfr.#: SMLVT3V3 OMO.#: OMO-SMLVT3V3	TVS Diodes / ESD Suppressors 600W 3.3V Unidirect
	Mfr.#: ispPAC-POWR1220AT8-02TN100I OMO.#: OMO-ISPPAC-POWR1220AT8-02TN100I	Supervisory Circuits Prec. Power Supply Seq. Monitor Marg.
	Mfr.#: LM2675MX-5.0/NOPB OMO.#: OMO-LM2675MX-5-0-NOPB	Switching Voltage Regulators HIGH EFF 1A STEP- DOWN VLTG REG
	Mfr.#: TAJC685K050RNJ OMO.#: OMO-TAJC685K050RNJ	Tantalum Capacitors - Solid SMD 50V 6.8uF 10% 2312 ESR= 1 Ohms
	Mfr.#: RT0402BRD0710KL OMO.#: OMO-RT0402BRD0710KL	Thin Film Resistors - SMD 10K ohm 0.1% 1/16W
	Mfr.#: 505473-0810 OMO.#: OMO-505473-0810-393	Conn Board to Board RCP 4Power/4Signal POS 0.4mm Solder ST SMD Embossed T/R - Tape and Reel (Alt: 5054730810)
	Mfr.#: SMLVT3V3 OMO.#: OMO-SMLVT3V3-STMICROELECTRONICS	TVS DIODE 3.3V 10.3V SMB
	Mfr.#: ISPPAC-POWR1220AT8-02TN100I OMO.#: OMO-ISPPAC-POWR1220AT8-02TN100I-LATTICE-SEMICONDUCTOR	Supervisory Circuits Prec. Power Supply Seq. Monitor Marg.
	Mfr.#: TAJC685K050RNJ OMO.#: OMO-TAJC685K050RNJ-AVX	Tantalum Capacitors - Solid SMD 50V 6.8uF 10%

FDMC86340ET80

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes