FFSH20120A-F085

Mfr. #:: FFSH20120A-F085
제조사:: ON Semiconductor
설명:: Schottky Diodes & Rectifiers 1200V 20A AUTO SIC SBD
수명 주기:: 이 제조업체의 새 제품입니다.
데이터 시트:: FFSH20120A-F085 데이터 시트
배달:: DHL FedEx Ups TNT EMS
지불:: T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:: FFSH20120A-F085 Datasheet FFSH20120A-F085 Datasheet (P4-P6)FFSH20120A-F085 Datasheet (P7-P8)
ECAD Model:
추가 정보:: FFSH20120A-F085 추가 정보

제품 속성
속성 값

제조사:: 온세미컨덕터

제품 카테고리:: 쇼트키 다이오드 및 정류기

RoHS:: Y

제품:: 쇼트키 탄화규소 다이오드

장착 스타일:: 구멍을 통해

패키지/케이스:: TO-247-2LD

If - 순방향 전류:: 20 A

Vrrm - 반복적인 역전압:: 1200 V

Vf - 순방향 전압:: 1.45 V

Ifsm - 순방향 서지 전류:: 135 A

구성:: 하나의

기술:: SiC

Ir - 역전류:: 200 uA

최소 작동 온도:: - 55 C

최대 작동 온도:: + 175 C

자격:: AEC-Q101

포장:: 튜브

상표:: 온세미컨덕터

Pd - 전력 손실:: 273 W

상품 유형:: 쇼트키 다이오드 및 정류기

공장 팩 수량:: 450

하위 카테고리:: 다이오드 및 정류기

trr - 역 복구 시간:: -

Vr - 역 전압:: 1200 V

Tags: FFSH201, FFSH2, FFSH, FFS

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

FFSH20120A-F085 추가 정보

FFSH SiC Schottky Diodes: ON Semiconductor FFSH Silicon Carbide (SiC) Schottky Diodes provide improved system efficiency and have a max junction temperature of 175ºC. These Schottky Diodes have no switching loss and a high surge current capacity. The diodes use Silicon Carbide semiconductor material for higher operating frequency, increasing power density and reduction of system size/cost. This ensures high reliability and robust operation during surge or over-voltage conditions.

1200V SiC Schottky Diodes: ON Semiconductor 1200V Silicon Carbide (SiC) Schottky Diodes provide superior switching performance and higher reliability to silicon-based devices. These SiC Schottky diodes feature no reverse recovery current, temperature-independent switching, and excellent thermal performance. The system benefits include high-efficiency, fast operating frequency, high-power density, low EMI, and reduced system size and cost.

Wide Bandgap SiC Devices: ON Semiconductor Wide Bandgap Silicon Carbide (SiC) Devices incorporate a completely new technology that provides superior switching performance and higher reliability compared to silicon. The system benefits include the highest efficiency, faster-operating frequency, increased power density, reduced EMI, and reduced system size and cost. ON Semiconductor’s SiC portfolio includes 650V and 1200V diodes, 650V and 1200V IGBT and SiC diode Power Integrated Modules (PIMs), 1200V MOSFETs and SiC MOSFET drivers, and AEC-Q100 qualified devices.

Market price

부분 #	제조	설명	재고	가격
FFSH20120A-F085 DISTI # V99:2348_21657264	ON Semiconductor	Silicon Carbide Schottky Diode	440	500:$13.3800 250:$14.3000 100:$14.5900 25:$16.7100 10:$17.6000 1:$19.3200
FFSH20120A-F085 DISTI # V36:1790_21657264	ON Semiconductor	Silicon Carbide Schottky Diode	0	450000:$10.7600 225000:$10.7700 45000:$12.5500 4500:$16.7200 450:$17.4900
FFSH20120A-F085 DISTI # FFSH20120A-F085OS-ND	ON Semiconductor	1200V 20A AUTO SIC SBD RoHS: Not compliant Min Qty: 1 Container: Tube	449In Stock	450:$15.0381 25:$17.9488 10:$18.7250 1:$20.3700
FFSH20120A-F085 DISTI # 31234725	ON Semiconductor	Silicon Carbide Schottky Diode	1350	500:$13.2660 450:$14.1867
FFSH20120A-F085 DISTI # 29729158	ON Semiconductor	Silicon Carbide Schottky Diode	440	500:$13.3800 250:$14.3000 100:$14.5900 25:$16.7100 10:$17.6000 1:$19.3200
FFSH20120A-F085 DISTI # FFSH20120A-F085	ON Semiconductor	1200V 20AAUTO SIC SBD - Rail/Tube (Alt: FFSH20120A-F085) RoHS: Compliant Min Qty: 450 Container: Tube	Americas - 0	4500:$11.3900 2700:$11.5900 1800:$11.7900 450:$11.9900 900:$11.9900
FFSH20120A-F085 DISTI # 62AC6882	ON Semiconductor	SIC SCHOTTKY DIODE, AEC-Q101, TO-247,Product Range:-,Diode Configuration:Single,Repetitive Reverse Voltage Vrrm Max:1.2kV,Continuous Forward Current If:20A,Total Capacitive Charge Qc:120nC,Diode Case Style:TO-247,No. of Pins:2RoHS Compliant: Yes	448	500:$13.5300 250:$14.4700 100:$15.2200 50:$16.2500 25:$17.2700 10:$18.0200 1:$19.5900
FFSH20120A-F085 DISTI # 863-FFSH20120A-F085	ON Semiconductor	Schottky Diodes & Rectifiers 1200V 20A AUTO SIC SBD RoHS: Compliant	663	1:$19.4000 10:$17.8400 25:$17.1000 100:$15.0700 250:$14.3300 500:$13.4000
FFSH20120A-F085 DISTI # 1784267	ON Semiconductor	1200V 20AAUTO SIC SBD, TU	420	150:£9.9910 30:£10.7840
FFSH20120A-F085 DISTI # 2895630	ON Semiconductor	SIC SCHOTTKY DIODE, AEC-Q101, TO-247 RoHS: Compliant	448	450:$22.6700 25:$27.0500 10:$28.2200 1:$30.7000
FFSH20120A-F085 DISTI # 2895630	ON Semiconductor	SIC SCHOTTKY DIODE, AEC-Q101, TO-247	448	100:£10.9200 50:£11.6600 10:£12.3900 5:£14.0600 1:£14.0900

영상	부분 #	설명
	Mfr.#: TL082CDR OMO.#: OMO-TL082CDR	Operational Amplifiers - Op Amps Dual JFET Op Amp
	Mfr.#: SQ2364EES-T1_GE3 OMO.#: OMO-SQ2364EES-T1-GE3	MOSFET 60V Vds; +/-8V Vgs SOT-23; 4A Id
	Mfr.#: PMEG40T20ERX OMO.#: OMO-PMEG40T20ERX	Schottky Diodes & Rectifiers PMEG40T20ER/SOD123/S
	Mfr.#: TL082CDR OMO.#: OMO-TL082CDR-TEXAS-INSTRUMENTS	Operational Amplifiers - Op Amps Dual JFET Op Amp
	Mfr.#: S1911-46R OMO.#: OMO-S1911-46R-HARWIN	JUMPER TIN SMD
	Mfr.#: C1812C105K1RACAUTO OMO.#: OMO-C1812C105K1RACAUTO-KEMET	CAP, 1F, 100V, 10%, X7R, 1812
	Mfr.#: FFSB10120A-F085 OMO.#: OMO-FFSB10120A-F085-ON-SEMICONDUCTOR	1200V 10A AUTO SIC SBD
	Mfr.#: FFSB20120A-F085 OMO.#: OMO-FFSB20120A-F085-ON-SEMICONDUCTOR	Silicon Carbide Schottky Diode
	Mfr.#: PMEG40T20ERX OMO.#: OMO-PMEG40T20ERX-NEXPERIA	DIODE SCHOTTKY 40V 2A SOD123W

FFSH20120A-F085

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes