FDBL0240N100

FDBL0240N100
Mfr. #:
FDBL0240N100
제조사:
ON Semiconductor / Fairchild
설명:
MOSFET N-Channel Power Trench MOSFET
수명 주기:
이 제조업체의 새 제품입니다.
데이터 시트:
FDBL0240N100 데이터 시트
배달:
DHL FedEx Ups TNT EMS
지불:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
추가 정보:
FDBL0240N100 추가 정보
제품 속성
속성 값
제조사:
온세미컨덕터
제품 카테고리:
MOSFET
RoHS:
Y
기술:
장착 스타일:
SMD/SMT
패키지/케이스:
H-PSOF-8
채널 수:
1 Channel
트랜지스터 극성:
N-채널
Vds - 드레인 소스 항복 전압:
100 V
Id - 연속 드레인 전류:
210 A
Rds On - 드레인 소스 저항:
2.8 mOhms
Vgs th - 게이트 소스 임계 전압:
2 V
Vgs - 게이트 소스 전압:
20 V
Qg - 게이트 차지:
79 nC
최소 작동 온도:
- 55 C
최대 작동 온도:
+ 175 C
Pd - 전력 손실:
300 W
구성:
하나의
채널 모드:
상승
상표명:
파워트렌치
포장:
키:
2.4 mm
길이:
10.48 mm
시리즈:
FDBL0240N100
트랜지스터 유형:
1 N-Channel
너비:
9.9 mm
상표:
온세미컨덕터 / 페어차일드
순방향 트랜스컨덕턴스 - 최소:
162 S
가을 시간:
17 ns
상품 유형:
MOSFET
상승 시간:
32 ns
공장 팩 수량:
2000
하위 카테고리:
MOSFET
일반적인 끄기 지연 시간:
44 ns
일반적인 켜기 지연 시간:
26 ns
단위 무게:
0.029985 oz
Tags
FDBL02, FDBL0, FDBL, FDB
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***Semiconductor
N-Channel PowerTrench® MOSFET, 100V, 210A, 2.8mΩ
***ical
Trans MOSFET N-CH 100V 210A 9-Pin(8+Tab) TO-LL T/R
***i-Key
MOSFET N-CH 100V POWER56
***et Europe
N-CHANNEL POWER TRENCH MOSFET
N-Channel PowerTrench® MOSFETs
ON Semiconductor N-Channel PowerTrench® MOSFETs are produced using advanced PowerTrench® process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance. ON Semiconductor N-Channel PowerTrench® MOSFETs are available in a variety of Drain to Source Voltage specifications, from 30V to 250V.The FDD10N20LZ and FDD7N25LZ are N-Channel enhancement mode power field effect transistors that are produced using planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficient switching mode power supplies and active power factor correction.The FDMC6296 is a single N-Channel MOSFET in a thermally efficient MicroFET Package that has been specifically designed to perform well in Point of Load converters. Providing an optimized balance between rDS(on) and gate charge this device can be effectively used as a "high side" control swtich or "low side" synchronous rectifier.Learn more
부분 # 제조 설명 재고 가격
FDBL0240N100
DISTI # V72:2272_14141734
ON SemiconductorN-CHANNEL POWER TRENCH MOSFET1881
  • 1000:$2.2439
  • 500:$2.6710
  • 250:$2.8900
  • 100:$3.1680
  • 25:$3.2550
  • 10:$3.6170
  • 1:$4.7179
FDBL0240N100
DISTI # V36:1790_14141734
ON SemiconductorN-CHANNEL POWER TRENCH MOSFET0
  • 2000000:$1.9760
  • 1000000:$1.9780
  • 200000:$2.0840
  • 20000:$2.2500
  • 2000:$2.2770
FDBL0240N100
DISTI # FDBL0240N100CT-ND
ON SemiconductorMOSFET N-CH 100V 210A POWER56
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)
5750In Stock
  • 1000:$2.4686
  • 500:$2.9270
  • 100:$3.4384
  • 10:$4.1970
  • 1:$4.6700
FDBL0240N100
DISTI # FDBL0240N100DKR-ND
ON SemiconductorMOSFET N-CH 100V 210A POWER56
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®
5750In Stock
  • 1000:$2.4686
  • 500:$2.9270
  • 100:$3.4384
  • 10:$4.1970
  • 1:$4.6700
FDBL0240N100
DISTI # FDBL0240N100TR-ND
ON SemiconductorMOSFET N-CH 100V 210A POWER56
RoHS: Compliant
Min Qty: 2000
Container: Tape & Reel (TR)
4000In Stock
  • 2000:$2.2769
FDBL0240N100
DISTI # 32149079
ON SemiconductorN-CHANNEL POWER TRENCH MOSFET1881
  • 4:$4.7179
FDBL0240N100
DISTI # FDBL0240N100
ON SemiconductorN-CHANNEL POWER TRENCH MOSFET - Tape and Reel (Alt: FDBL0240N100)
RoHS: Compliant
Min Qty: 2000
Container: Reel
Americas - 0
  • 8000:$1.9900
  • 12000:$1.9900
  • 20000:$1.9900
  • 2000:$2.0900
  • 4000:$2.0900
FDBL0240N100
DISTI # FDBL0240N100
ON SemiconductorN-CHANNEL POWER TRENCH MOSFET (Alt: FDBL0240N100)
RoHS: Compliant
Min Qty: 2000
Europe - 0
  • 20000:€1.7900
  • 12000:€1.9900
  • 8000:€2.0900
  • 4000:€2.1900
  • 2000:€2.2900
FDBL0240N100
DISTI # 01AC8514
ON SemiconductorFET 100V 2.8 MOHM TOLL / REEL0
  • 500:$2.1200
  • 250:$2.1900
  • 100:$2.6100
  • 50:$3.0200
  • 25:$3.2200
  • 10:$3.6700
  • 1:$4.2400
FDBL0240N100
DISTI # 512-FDBL0240N100
ON SemiconductorMOSFET N-Channel Power Trench MOSFET
RoHS: Compliant
1690
  • 1:$4.3200
  • 10:$3.6700
  • 100:$3.1800
  • 250:$3.0200
  • 500:$2.7100
  • 1000:$2.2900
  • 2000:$2.1700
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Mfr.#: 74438357068

OMO.#: OMO-74438357068

Fixed Inductors WE-MAPI SMD 4030 6.8uH 3A 74mOhms
HS200 1R J

Mfr.#: HS200 1R J

OMO.#: OMO-HS200-1R-J

Wirewound Resistors - Chassis Mount 200W 1 Ohm 5%
74650194R

Mfr.#: 74650194R

OMO.#: OMO-74650194R

Terminals WP-THRBU THR Bush M4 3.5mm Blind
74650174R

Mfr.#: 74650174R

OMO.#: OMO-74650174R

Terminals WP-THRBU THR Bush M4 3.5mm Blind
ATA6561-GAQW-N

Mfr.#: ATA6561-GAQW-N

OMO.#: OMO-ATA6561-GAQW-N-MICROCHIP-TECHNOLOGY

INDUSTRIAL GRADE CAN TRX WITH VI
TMK105BJ105KV-F

Mfr.#: TMK105BJ105KV-F

OMO.#: OMO-TMK105BJ105KV-F-428

Cap Ceramic 1uF 25V X5R 10% Pad SMD 0402 85C T/R
유효성
재고:
Available
주문 시:
1984
수량 입력:
FDBL0240N100의 현재 가격은 참고용이며 최상의 가격을 원하시면 판매팀 [email protected]으로 문의 또는 다이렉트 이메일을 보내주십시오.
참고 가격(USD)
수량
단가
내선 가격
1
US$4.32
US$4.32
10
US$3.67
US$36.70
100
US$3.18
US$318.00
250
US$3.02
US$755.00
500
US$2.71
US$1 355.00
1000
US$2.29
US$2 290.00
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