MHT1002NR3

MHT1002NR3
Mfr. #:
MHT1002NR3
제조사:
NXP / Freescale
설명:
RF MOSFET Transistors RF PWR LDMOS TRANSIS 915MHz, 350W CW,50V
수명 주기:
이 제조업체의 새 제품입니다.
데이터 시트:
MHT1002NR3 데이터 시트
배달:
DHL FedEx Ups TNT EMS
지불:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
추가 정보:
MHT1002NR3 추가 정보
제품 속성
속성 값
제조사:
NXP
제품 카테고리:
RF MOSFET 트랜지스터
RoHS:
Y
기술:
얻다:
20 dB
출력 파워:
350 W
포장:
동작 주파수:
915 MHz
유형:
RF 전력 MOSFET
상표:
NXP / 프리스케일
습기에 민감한:
상품 유형:
RF MOSFET 트랜지스터
공장 팩 수량:
250
하위 카테고리:
MOSFET
부품 번호 별칭:
935323605528
단위 무게:
0.108111 oz
Tags
MHT10, MHT1, MHT
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***escale Semiconductor
RF Power LDMOS Transistor for Consumer and Commercial Cooking, 915 MHz, 350 W, 48 V
***ark
RUGGED RF POWER LDMOS TRANSISTOR, HEATING AND COOKING, 915MHz, 350W CW, 50V
***W
RF Power Transistor,915 to 915 MHz, 387 W, Typ Gain in dB is 20.7 @ 915 MHz, 48 V, LDMOS, SOT1818
*** Electronic Components
RF MOSFET Transistors RF PWR LDMOS TRANSIS 915MHz, 350W CW,50V
***et
Power LDMOS Transistor N-Channel 48V 350W 915MHz 5-Pin SMT T/R
***W
Amplifier,920 to 960 MHz, 31 W, Typ Gain in dB is 35.9 @ 940 MHz, 28 V, LDMOS, SOT1727
***et
RF Amp Module Single Power Amp 960MHz 32V 17-Pin TO-272 W T/R
*** Semiconductors SCT
Single W-CDMA RF LDMOS Wideband Integrated Power Amplifier, 728-768 MHz, 920-960 MHz, 3.2 W, 28 V, FM16F
***nell
RF FET, 65V, 728MHZ-960MHZ, TO-272WB; Drain Source Voltage Vds: 65V; Continuous Drain Current Id: -; Power Dissipation Pd: -; Operating Frequency Min: 728MHz; Operating Frequency Max: 960MHz; RF Transistor Case: TO-272WB; No.
***W
Amplifier,920 to 960 MHz, 31 W, Typ Gain in dB is 35.9 @ 940 MHz, 28 V, LDMOS, SOT1726
*** Source Electronics
RF Amp Single Power Amp 960MHz 32V 17-Pin TO-270 W T/R / IC PWR AMP RF 900MHZ TO-270-16
*** Semiconductors SCT
Single W-CDMA RF LDMOS Wideband Integrated Power Amplifier, 728-768 MHz, 920-960 MHz, 3.2 W, 28 V, FM16F
***nell
RF FET, 65V, 728MHZ-960MHZ, TO-270WB; Drain Source Voltage Vds: 65V; Continuous Drain Current Id: -; Power Dissipation Pd: -; Operating Frequency Min: 728MHz; Operating Frequency Max: 960MHz; RF Transistor Case: TO-270WB; No. of Pins: 16Pins; Operating Temperature Max: 150°C; Product Range: MW7IC930N Series; MSL: MSL 3 - 168 hours; SVHC: No SVHC (15-Jan-2019)
***ical
RF Amp Module Single Power Amp 960MHz 32V 17-Pin TO-270 W GULL T/R
***W
Amplifier,920 to 960 MHz, 31 W, Typ Gain in dB is 35.9 @ 940 MHz, 28 V, LDMOS, SOT1723
*** Semiconductors SCT
Single W-CDMA RF LDMOS Wideband Integrated Power Amplifier, 728-768 MHz, 920-960 MHz, 3.2 W, 28 V, FM16
***escale Semiconductor
Single W-CDMA RF LDMOS Wideband Integrated Power Amplifier, 728-960 MHz, 2.5 W Avg., 28 V
***W
Amplifier,728 to 960 MHz, 26 W, Typ Gain in dB is 36.2 @ 940 MHz, 28 V, LDMOS, SOT1720
***p One Stop Global
RF Amp Module Dual Power Amp 960MHz 32V 15-Pin TO-270 W T/R
***escale Semiconductor
Single W-CDMA RF LDMOS Wideband Integrated Power Amplifier, 728-960 MHz, 2.5 W Avg., 28 V
***et
RF Amp Chip Dual Power Amplifier 960MHz 714-Pin TO-270WBG T/R
***W
Amplifier,728 to 960 MHz, 26 W, Typ Gain in dB is 36.2 @ 940 MHz, 28 V, LDMOS, SOT1720
***p One Stop Global
RF Amp Module Dual Power Amp 960MHz 32V 15-Pin TO-270 W GULL T/R
MHT1002N RF Power Transistor
Freescale's MHT1002N RF Power Transistor is a new cost-effective, solid-state RF power transistors specifically targeting 915MHz RF cooking applications. This device delivers highly efficient and controllable RF energy without performance degradation over time. This device is designed for operation in the harsh environments encountered with RF Heating (high vibration, RF mismatch, high temperatures). It is rated for continuous wave (CW) operation at high power and high frequencies. This offers superior thermal performance v.s. ceramic packaging and is available in a 50V low voltage operation. Typical applications include consumer microwave ovens, commercial RF heating and microwave oven applications, industrial heating.
부분 # 제조 설명 재고 가격
MHT1002NR3
DISTI # MHT1002NR3-ND
NXP SemiconductorsIC RF AMP 915MHZ OM780-4
RoHS: Compliant
Min Qty: 250
Container: Tape & Reel (TR)
Temporarily Out of Stock
  • 250:$211.2289
MHT1002NR3
DISTI # MHT1002NR3
NXP SemiconductorsTrans MOSFET N-CH 5-Pin SMT T/R - Tape and Reel (Alt: MHT1002NR3)
RoHS: Compliant
Min Qty: 250
Container: Reel
Americas - 0
  • 250:$215.2900
  • 500:$206.7900
  • 1000:$198.7900
  • 1500:$191.4900
  • 2500:$187.8900
MHT1002NR3
DISTI # 841-MHT1002NR3
NXP SemiconductorsRF MOSFET Transistors RF PWR LDMOS TRANSIS 915MHz, 350W CW,50V
RoHS: Compliant
0
  • 250:$192.0400
MHT1002NR3
DISTI # MHT1002NR3
NXP SemiconductorsRF POWER TRANSISTOR
RoHS: Compliant
0
  • 250:$195.6700
영상 부분 # 설명
MHT1008NT1

Mfr.#: MHT1008NT1

OMO.#: OMO-MHT1008NT1

RF MOSFET Transistors RF Power LDMOS Transistor for Consumer and Commercial Cooking, 2450 MHz, 12.5 W CW, 28 V
MHT1006NT1

Mfr.#: MHT1006NT1

OMO.#: OMO-MHT1006NT1

RF MOSFET Transistors 728-2700 MHz 1.26 W Avg. 28 V
MHT1001HR5

Mfr.#: MHT1001HR5

OMO.#: OMO-MHT1001HR5

RF MOSFET Transistors 2.4GHZ HV6 40W
MHT1004NR3

Mfr.#: MHT1004NR3

OMO.#: OMO-MHT1004NR3

RF MOSFET Transistors RF Power LDMOS Transistor for Consumer and Commercial Cooking, 2450 MHz, 300 W, 32 V
MHT1002NR3

Mfr.#: MHT1002NR3

OMO.#: OMO-MHT1002NR3

RF MOSFET Transistors RF PWR LDMOS TRANSIS 915MHz, 350W CW,50V
MHT1000H

Mfr.#: MHT1000H

OMO.#: OMO-MHT1000H-1190

신규 및 오리지널
MHT1001H

Mfr.#: MHT1001H

OMO.#: OMO-MHT1001H-1190

신규 및 오리지널
MHT1004NR3

Mfr.#: MHT1004NR3

OMO.#: OMO-MHT1004NR3-NXP-SEMICONDUCTORS

RF POWER LDMOS TRANSISTOR 2450
MHT1006NT1

Mfr.#: MHT1006NT1

OMO.#: OMO-MHT1006NT1-NXP-SEMICONDUCTORS

RF MOSFET Transistors 728-2700 MHz 1.26 W Avg. 28 V
MHT1002NR3

Mfr.#: MHT1002NR3

OMO.#: OMO-MHT1002NR3-NXP-SEMICONDUCTORS

RF MOSFET Transistors RF PWR LDMOS TRANSIS 915MHz, 350W CW,50V
유효성
재고:
Available
주문 시:
3000
수량 입력:
MHT1002NR3의 현재 가격은 참고용이며 최상의 가격을 원하시면 판매팀 [email protected]으로 문의 또는 다이렉트 이메일을 보내주십시오.
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