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IRGB4B60KD1PBF

IRGB4B60KD1PBF
Mfr. #:
IRGB4B60KD1PBF
제조사:
Infineon Technologies
설명:
IGBT Transistors 600V Low-Vceon Non Punch Through
수명 주기:
이 제조업체의 새 제품입니다.
데이터 시트:
IRGB4B60KD1PBF 데이터 시트
배달:
DHL FedEx Ups TNT EMS
지불:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IRGB4B60KD1PBF DatasheetIRGB4B60KD1PBF Datasheet (P4-P6)IRGB4B60KD1PBF Datasheet (P7-P9)IRGB4B60KD1PBF Datasheet (P10-P12)IRGB4B60KD1PBF Datasheet (P13-P15)IRGB4B60KD1PBF Datasheet (P16)
ECAD Model:
제품 속성
속성 값
제조사
인피니언 테크놀로지스
제품 카테고리
IGBT - 싱글
시리즈
-
포장
튜브
단위 무게
0.211644 oz
장착 스타일
구멍을 통해
패키지 케이스
TO-220-3
입력 유형
기준
장착형
구멍을 통해
공급자-장치-패키지
TO-220AB
구성
하나의
파워맥스
63W
역복구-시간-trr
93ns
전류 수집기 Ic-Max
11A
Voltage-Collector-Emitter-Breakdown-Max
600V
IGBT형
NPT
전류 수집기 펄스 Icm
22A
Vce-on-Max-Vge-Ic
2.5V @ 15V, 4A
스위칭 에너지
73μJ (on), 47μJ (off)
게이트 차지
12nC
Td-on-off-25°C
22ns/100ns
시험조건
400V, 4A, 100 Ohm, 15V
Pd 전력 손실
63 W
최소 작동 온도
- 55 C
컬렉터-이미터-전압-VCEO-최대
600 V
컬렉터-이미터-포화-전압
2.5 V
연속 수집기 전류 at-25-C
12 A
최대 게이트 이미 터 전압
+/- 20 V
Tags
IRGB4B, IRGB4, IRGB, IRG
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ernational Rectifier
600V Low-Vceon Non Punch Through Copack IGBT in a TO-220 FullPak package
***et
Trans IGBT Chip N-CH 600V 11A 3-Pin(3+Tab) TO-220AB
***ineon
Target Applications: Dishwasher; Fan; Lighting HID; Pump; Refridgeration; Solar
***roFlash
IGBT; Transistor Polarity: N Channel; Collector Emitter Voltage, Vceo: 600V; Collector Emitter Saturation Voltage,...
***or
IRGB4B60K - IGBT WITH ULTRAFAST
***S
French Electronic Distributor since 1988
***ical
Trans IGBT Chip N-CH 600V 11A 3-Pin(3+Tab) TO-220 Full-Pak
***ure Electronics
IRGIB6B60 Series 600 V 11 A Insulated Gate Bipolar Transistor - TO-220FP
***ineon
Target Applications: Dishwasher; Dryer; Fan; Lighting HID; Pump; Refridgeration; Solar
***ernational Rectifier
600V Low-Vceon Copack IGBT in a TO-220 FullPak package
***ark
IGBT; Transistor Type:IGBT; Leaded Process Compatible:Yes ;RoHS Compliant: Yes
***nell
IGBT, 600V, 9A, TO-220FP; Transistor Type:IGBT; Transistor Polarity:N; Voltage, Vces:600V; Current Ic Continuous a Max:9A; Voltage, Vce Sat Max:2.2V; Power Dissipation:32W; Case Style:TO-220FP; Termination Type:Through Hole; Collector-to-Emitter Breakdown Voltage:600V; Current, Icm Pulsed:22A; Power, Pd:32W; Time, Fall:22ns; Time, Fall Max:22ns; Time, Rise:17ns
***ical
Trans IGBT Chip N-CH 600V 11A 28000mW 3-Pin(3+Tab) TO-220FP Tube
***S.I.T. Europe - USA - Asia
Insulated Gate Bipolar Transistor, 11A I(C), 600V V(BR)CES, N-Channel, TO-220AB
***el Electronic
STMICROELECTRONICS STGF14NC60KD IGBT Single Transistor, 11 A, 2.5 V, 28 W, 600 V, TO-220FP, 3 Pins
***ark
IGBT, TO-220FP; Continuous Collector Current:11A; Collector Emitter Saturation Voltage:2.5V; Power Dissipation:28W; Collector Emitter Voltage Max:600V; No. of Pins:3Pins; Operating Temperature Max:150°C; Product Range:-; MSL:- RoHS Compliant: Yes
***ure Electronics
IRGIB7B60 Series 600 V 8 A N-Channel UltraFast IGBT - TO-220AB
***Yang
Trans IGBT Chip N-CH 600V 12A 3-Pin(3+Tab) TO-220AB - Rail/Tube
***ernational Rectifier
600V Low-Vceon Copack IGBT in a TO-220 FullPak package
***ment14 APAC
IGBT, 600V, 12A, TO-220FP; Transistor Type:IGBT; DC Collector Current:12A; Collector Emitter Voltage Vces:2.2V; Power Dissipation Pd:39W; Collector Emitter Voltage V(br)ceo:600V; Transistor Case Style:TO-220FP; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Ic Continuous a Max:12A; Fall Time Max:42ns; Fall Time tf:42ns; Package / Case:TO-220FP; Power Dissipation Max:39W; Power Dissipation Pd:39W; Power Dissipation Pd:39W; Pulsed Current Icm:24A; Rise Time:22ns; Termination Type:Through Hole; Transistor Polarity:N Channel; Voltage Vces:600V
***ical
Trans IGBT Chip N-CH 600V 8A 56000mW 3-Pin(3+Tab) TO-220AB Tube
***ernational Rectifier
600V UltraFast Copack Trench IGBT in a TO-220AB package
***S.I.T. Europe - USA - Asia
Insulated Gate Bipolar Transistor, 8A I(C), 600V V(BR)CES, N-Channel, TO-220AB
***nell
SINGLE IGBT, 600V; Transistor Type: IGBT; DC Collector Current: 8A; Collector Emitter Voltage Vces: 600V; Power Dissipation Pd: 56W; Collector Emitter Voltage V(br)ceo: 600V; No. of Pins: 3; C-E Breakdown Voltage: 2.2V
***ical
Trans IGBT Chip N-CH 600V 10A 25000mW 3-Pin(3+Tab) TO-220FP Tube
***ure Electronics
STGF7NC60HD Series 600 V 10 A N-Channel Very Fast PowerMESH IGBT - TO-220FP
***icroelectronics
N-channel 14 A, 600 V, very fast IGBT with Ultrafast diode
***S.I.T. Europe - USA - Asia
Insulated Gate Bipolar Transistor, 10A I(C), 600V V(BR)CES, N-Channel, TO-220AB
***nell
IGBT, 600V, 7A, TO-220FP; DC Collector Current: 10A; Collector Emitter Saturation Voltage Vce(on): 2.5V; Power Dissipation Pd: 80W; Collector Emitter Voltage V(br)ceo: 600V; Transistor Case Style: TO-220FP; No. of Pins: 3Pins;
***ark
N CH IGBT, PowerMESH, 600V, 10A, TO-220FP; Continuous Collector Current:10A; Collector Emitter Saturation Voltage:1.85V; Power Dissipation:25W; Collector Emitter Voltage Max:600V; No. of Pins:3Pins; Operating Temperature Max:150°C RoHS Compliant: Yes
***et
Trans IGBT Chip N-CH 600V 13A 3-Pin(3+Tab) TO-220 Rail
***r Electronics
Insulated Gate Bipolar Transistor, 13A I(C), 600V V(BR)CES, N-Channel, TO-220AB
***rchild Semiconductor
Fairchild's UFD series of Insulated Gate Bipolar Transistors (IGBTs) provides low conduction and switching losses. The UD series si designed for applications such as motor control and general inverters where high speed switching is a required feature.
부분 # 제조 설명 재고 가격
IRGB4B60KD1PBF
DISTI # IRGB4B60KD1PBF-ND		Infineon Technologies AGIGBT 600V 11A 63W TO220AB
RoHS: Compliant
Min Qty: 1000
Container: Tube		Limited Supply - Call
    IRGB4B60KD1PBF
    DISTI # 70017212    		Infineon Technologies AG600V Low-VCEON Non Punch Through COPACK IGBT IN A TO-220 FULLPAK Package
    RoHS: Compliant    		0
    • 500:$3.4600
    • 1000:$3.3910
    • 2500:$3.2870
    • 5000:$3.1490
    • 12500:$2.9410
    IRGB4B60KD1PBF
    DISTI # 942-IRGB4B60KD1PBF    		Infineon Technologies AGIGBT Transistors 600V Low-Vceon Non Punch Through
    RoHS: Compliant    		9
    • 1:$1.8800
    • 10:$1.6000
    • 100:$1.2800
    • 500:$1.1200
    • 1000:$0.9270
    • 2500:$0.8630
    • 5000:$0.8310
    • 10000:$0.7990
    IRGB4B60KD1PBFInternational Rectifier 200
      영상 부분 # 설명
      IRGB4B60KPBF

      Mfr.#: IRGB4B60KPBF

      OMO.#: OMO-IRGB4B60KPBF

      		 IGBT Transistors 600V Low VCEon
      IRGB4B60KD1PBF

      Mfr.#: IRGB4B60KD1PBF

      OMO.#: OMO-IRGB4B60KD1PBF-INFINEON-TECHNOLOGIES

      		 IGBT Transistors 600V Low-Vceon Non Punch Through
      IRGB4B60KPBF

      Mfr.#: IRGB4B60KPBF

      OMO.#: OMO-IRGB4B60KPBF-INFINEON-TECHNOLOGIES

      		 IGBT Transistors 600V Low VCEon
      IRGB4B60K

      Mfr.#: IRGB4B60K

      OMO.#: OMO-IRGB4B60K-1190

      		 신규 및 오리지널
      유효성
      재고:
      Available
      주문 시:
      4500
      수량 입력:
      IRGB4B60KD1PBF의 현재 가격은 참고용이며 최상의 가격을 원하시면 판매팀 [email protected]으로 문의 또는 다이렉트 이메일을 보내주십시오.
      참고 가격(USD)
      수량
      단가
      내선 가격
      1
      US$1.20
      US$1.20
      10
      US$1.14
      US$11.39
      100
      US$1.08
      US$107.87
      500
      US$1.02
      US$509.35
      1000
      US$0.96
      US$958.80
      시작
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