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STGB14NC60KDT4

STGB14NC60KDT4
Mfr. #:
STGB14NC60KDT4
제조사:
STMicroelectronics
설명:
IGBT Transistors PowerMESH&#34 IGBT
수명 주기:
이 제조업체의 새 제품입니다.
데이터 시트:
STGB14NC60KDT4 데이터 시트
배달:
DHL FedEx Ups TNT EMS
지불:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
추가 정보:
STGB14NC60KDT4 추가 정보 STGB14NC60KDT4 Product Details
제품 속성
속성 값
제조사:
ST마이크로일렉트로닉스
제품 카테고리:
IGBT 트랜지스터
RoHS:
Y
기술:
시
패키지/케이스:
D2PAK-3
장착 스타일:
SMD/SMT
구성:
하나의
컬렉터-이미터 전압 VCEO 최대:
600 V
수집기-이미터 포화 전압:
2.1 V
최대 게이트 이미터 전압:
20 V
최소 작동 온도:
- 55 C
최대 작동 온도:
+ 150 C
시리즈:
STGB14NC60KDT4
포장:
릴
연속 수집가 현재 IC 최대:
25 A
키:
4.6 mm
길이:
10.4 mm
너비:
9.35 mm
상표:
ST마이크로일렉트로닉스
지속적인 수집가 전류:
25 A
게이트-이미터 누설 전류:
2 A
상품 유형:
IGBT 트랜지스터
공장 팩 수량:
1000
하위 카테고리:
IGBT
단위 무게:
0.079014 oz
Tags
STGB14NC60KD, STGB14, STGB1, STGB, STG
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans IGBT Chip N-CH 600V 25A 80000mW 3-Pin(2+Tab) D2PAK T/R
***icroelectronics
14 A, 600 V short-circuit rugged IGBT
*** Source Electronics
IGBT 600V 25A 80W D2PAK / N-CHANNEL 14A - 600V - TO-220/TO-220FP/D2PAK SHORT CIRCUIT RATED PowerMESH IGBT
***icroelectronics SCT
Short-circuit rugged IGBT, D2PAK, Tape and Reel
***r Electronics
Insulated Gate Bipolar Transistor, 25A I(C), 600V V(BR)CES, N-Channel, TO-263AB
***(Formerly Allied Electronics)
IGBT, N-CHANNEL 600V 25A, D2PAK
***ser
IGBTs Insulated Gate Bipolar Transistor PowerMESH" IGBT
*** Electronic Components
IGBT Transistors PowerMESH" IGBT
***nell
IGBT, SMD, 600V, 14A, D2-PAK; DC Collector Current: 25A; Collector Emitter Saturation Voltage Vce(on): 2.5V; Power Dissipation Pd: 80W; Collector Emitter Voltage V(br)ceo: -; Transistor Case Style: TO-263; No. of Pins: 3Pins;
*** Source Electronics
Trans IGBT Chip N-CH 600V 25A 80000mW 3-Pin(2+Tab) D2PAK T/R / IGBT 600V 25A 80W D2PAK
***ure Electronics
STGB7NC60H Series 600 V 14 A N-Channel Power Mesh IGBT - D2PAK
***icroelectronics
N-channel 14 A, 600 V, very fast IGBT with Ultrafast diode
***ark
Igbt, Smd, 600V, 14A, D2-Pak; Dc Collector Current:25A; Collector Emitter Saturation Voltage Vce(On):2.5V; Power Dissipation Pd:80W; Collector Emitter Voltage V(Br)Ceo:-; Transistor Case Style:to-263; No. Of Pins:3Pins; Operating Rohs Compliant: Yes
*** Source Electronics
Trans IGBT Chip N-CH 600V 20A 60000mW 3-Pin(2+Tab) D2PAK T/R / IGBT 600V 20A 65W D2PAK
***Parts
IGBTs - Single, Transistors N-Channel, D2PAK 20A 600V 65W Surface Mount
***ment14 APAC
IGBT, SMD, 600V, 10A, D2-PAK; DC Collector Current:10A; Emitter Saturation Voltage Vce(on):2.5V; Power Dissipation Pd:60W;
***nell
IGBT, SMD, 600V, 10A, D2-PAK; DC Collector Current: 10A; Collector Emitter Saturation Voltage Vce(on): 2.5V; Power Dissipation Pd: 60W; Collector Emitter Voltage V(br)ceo: 600V; Transistor Case Style: TO-263; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (17-Dec-2015); Current Ic Continuous a Max: 20A; Fall Time tf: 82ns; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +150°C; Power Dissipation Max: 60W; Pulsed Current Icm: 30A; Rise Time: 6ns; Termination Type: Surface Mount Device; Transistor Polarity: N Channel; Transistor Type: IGBT; Voltage Vces: 600V
***ure Electronics
STGB10NC60HD Series 600 V 20 A Surface Mount Very fast IGBT - D2PAK-3
***ical
Trans IGBT Chip N-CH 600V 20A 65000mW 3-Pin(2+Tab) D2PAK T/R
***(Formerly Allied Electronics)
STGB10NC60HDT4,IGBT N-ch 600V 10A D2PAK
***nell
IGBT, N 600V 10A D²PAK; DC Collector Current: 10A; Collector Emitter Saturation Voltage Vce(on): 2.5V; Power Dissipation Pd: 65W; Collector Emitter Voltage V(br)ceo: 600V; Transistor Case Style: TO-263; No. of Pins: 3Pins; Ope
부분 # 제조 설명 재고 가격
STGB14NC60KDT4
DISTI # V72:2272_18458244		STMicroelectronicsTrans IGBT Chip N-CH 600V 25A 3-Pin(2+Tab) D2PAK T/R
RoHS: Compliant		1000
  • 1000:$0.7440
  • 500:$0.8779
  • 250:$0.9875
  • 100:$0.9982
  • 25:$1.1984
  • 10:$1.2123
  • 1:$1.3866
STGB14NC60KDT4
DISTI # 497-5109-1-ND		STMicroelectronicsIGBT 600V 25A 80W D2PAK
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		2980In Stock
  • 500:$1.1903
  • 100:$1.4245
  • 10:$1.7460
  • 1:$1.9300
STGB14NC60KDT4
DISTI # 497-5109-6-ND		STMicroelectronicsIGBT 600V 25A 80W D2PAK
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		2980In Stock
  • 500:$1.1903
  • 100:$1.4245
  • 10:$1.7460
  • 1:$1.9300
STGB14NC60KDT4
DISTI # 497-5109-2-ND		STMicroelectronicsIGBT 600V 25A 80W D2PAK
RoHS: Compliant
Min Qty: 1000
Container: Tape & Reel (TR)		2000In Stock
  • 5000:$0.9063
  • 2000:$0.9163
  • 1000:$0.9761
STGB14NC60KDT4
DISTI # 30523276		STMicroelectronicsTrans IGBT Chip N-CH 600V 25A 3-Pin(2+Tab) D2PAK T/R
RoHS: Compliant		1000
  • 1000:$0.7440
  • 500:$0.8779
  • 250:$0.9875
  • 100:$0.9982
  • 25:$1.1984
  • 10:$1.2123
  • 9:$1.3866
STGB14NC60KDT4
DISTI # STGB14NC60KDT4		STMicroelectronicsTrans IGBT Chip N-CH 600V 25A 3-Pin(2+Tab) D2PAK T/R - Tape and Reel (Alt: STGB14NC60KDT4)
RoHS: Compliant
Min Qty: 1000
Container: Reel		Americas - 0
  • 1000:$0.8539
  • 2000:$0.8139
  • 4000:$0.7769
  • 6000:$0.7429
  • 10000:$0.7269
STGB14NC60KDT4
DISTI # STGB14NC60KDT4		STMicroelectronicsTrans IGBT Chip N-CH 600V 25A 3-Pin(2+Tab) D2PAK T/R (Alt: STGB14NC60KDT4)
RoHS: Compliant
Min Qty: 1000
Container: Tape and Reel		Europe - 0
  • 1000:€0.7139
  • 2000:€0.7119
  • 4000:€0.7109
  • 6000:€0.7089
  • 10000:€0.7069
STGB14NC60KDT4
DISTI # 511-STGB14NC60KDT4		STMicroelectronicsIGBT Transistors PowerMESH&#34 IGBT
RoHS: Compliant		1452
  • 1:$1.6700
  • 10:$1.4200
  • 100:$1.1400
  • 500:$0.9980
  • 1000:$0.8270
STGB14NC60KDT4
DISTI # IGBT2121		STMicroelectronicsIGBT 600V 14A 1,8VD2PAK
RoHS: Compliant		Stock DE - 0Stock US - 0
  • 1000:$0.8608
  • 2000:$0.8079
  • 4000:$0.7814
  • 6000:$0.7218
STGB14NC60KDT4
DISTI # C1S730201102808		STMicroelectronicsIGBT Chip
RoHS: Compliant		1000
  • 250:$0.9875
  • 100:$0.9982
  • 25:$1.1984
  • 10:$1.2123
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Mfr.#: OPA4196ID

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 MOSFET N-channel 600 V, 0.135 Ohm typ., 22 A MDmesh M2 Power MOSFETs in D2PAK package
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Mfr.#: STF11N60DM2

OMO.#: OMO-STF11N60DM2

 MOSFET N-channel 600 V, 0.370 Ohm typ., 10 A MDmesh DM2 Power MOSFET in a TO-220FP package
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Mfr.#: VIPER12AS-E

OMO.#: OMO-VIPER12AS-E

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Mfr.#: STM32F407VGT6

OMO.#: OMO-STM32F407VGT6

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Mfr.#: TPS54335ADDAR

OMO.#: OMO-TPS54335ADDAR

 Switching Voltage Regulators 4.5-28V Input 3A Sync SD Cnvtr
2499-003-X5W0-103ZLF

Mfr.#: 2499-003-X5W0-103ZLF

OMO.#: OMO-2499-003-X5W0-103ZLF

 EMI Feedthrough Filters 10000pF 500Volts
유효성
재고:
Available
주문 시:
1984
수량 입력:
STGB14NC60KDT4의 현재 가격은 참고용이며 최상의 가격을 원하시면 판매팀 [email protected]으로 문의 또는 다이렉트 이메일을 보내주십시오.
참고 가격(USD)
수량
단가
내선 가격
1
US$1.68
US$1.68
10
US$1.43
US$14.30
100
US$1.14
US$114.00
500
US$1.00
US$499.00
2021년부터 반도체 공급 부족으로 인해 아래 가격은 2021년 이전 정상 가격입니다. 확인을 위해 문의를 보내주세요.
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