SI5513DC-T1-E3

Mfr. #:: SI5513DC-T1-E3
제조사:: Vishay / Siliconix
설명:: MOSFET RECOMMENDED ALT 781-SI5513CDC-T1-GE3
수명 주기:: 이 제조업체의 새 제품입니다.
데이터 시트:: SI5513DC-T1-E3 데이터 시트
배달:: DHL FedEx Ups TNT EMS
지불:: T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:: SI5513DC-T1-E3 Datasheet SI5513DC-T1-E3 Datasheet (P4-P6)SI5513DC-T1-E3 Datasheet (P7-P8)
ECAD Model:

제품 속성
속성 값

제조사:: 비쉐이

제품 카테고리:: MOSFET

RoHS:: Y

기술:: 시

상표명:: TrenchFET

포장:: 릴

시리즈:: Si5513DC

상표:: 비쉐이 / 실리콘닉스

상품 유형:: MOSFET

공장 팩 수량:: 3000

하위 카테고리:: MOSFET

부품 번호 별칭:: SI5513DC-E3

단위 무게:: 0.002998 oz

Tags: SI5513DC-T, SI5513DC, SI5513D, SI5513, SI551, SI55, SI5

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

SI5513DC-T1-E3 설명

***ical: Trans MOSFET N/P-CH Si 20V 3.1A/2.1A 8-Pin Chip FET T/R

***C: Trans MOSFET N/P-CH Si 20V 3.1A/2.1A 8-Pin

***ied Electronics & Automation: MOSFET; 20V N & P CH (D-S) Complementary

***i-Key: MOSFET N/P-CH 20V 3.1A 1206-8

***ser: Dual MOSFETs 20V 4.2/2.9A

***: 20V N & P CH (D-S)

***ark: MOSFET; Transistor Type:MOSFET; Transistor Polarity:Dual N/P Channel; Drain Source Voltage, Vds:20V; Continuous Drain Current, Id:4.2A; On Resistance, Rds(on):75mohm; Rds(on) Test Voltage, Vgs:4.5V; Package/Case:1206-8 ChipFET ;RoHS Compliant: Yes

***nell: MOSFET, DUAL, NP, 8-1206; Transistor Type:MOSFET; Transistor Polarity:NP; Voltage, Vds Typ:20V; Current, Id Cont:4.2A; Resistance, Rds On:0.075ohm; Voltage, Vgs Rds on Measurement:4.5V; Voltage, Vgs th Typ:1.5V; Case Style:1206-8 ChipFET; Termination Type:SMD

***ment14 APAC: MOSFET, DUAL, NP, 8-1206; Transistor Polarity:N and P Channel; Continuous Drain Current Id:4.2A; Drain Source Voltage Vds:20V; On Resistance Rds(on):75mohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs Typ:1.5V; Power Dissipation Pd:1.1W; Transistor Case Style:1206; No. of Pins:8; Current Id Max:4.2A; Package / Case:1206-8 ChipFET; Termination Type:SMD; Voltage Vds Typ:20V; Voltage Vgs Max:1.5V; Voltage Vgs Rds on Measurement:4.5V

Market price

부분 #	제조	설명	재고	가격
SI5513DC-T1-E3 DISTI # SI5513DC-T1-E3TR-ND	Vishay Siliconix	MOSFET N/P-CH 20V 3.1A 1206-8 RoHS: Compliant Min Qty: 3000 Container: Tape & Reel (TR)	Limited Supply - Call
SI5513DC-T1-E3 DISTI # SI5513DC-T1-E3CT-ND	Vishay Siliconix	MOSFET N/P-CH 20V 3.1A 1206-8 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	Limited Supply - Call
SI5513DC-T1-E3 DISTI # SI5513DC-T1-E3DKR-ND	Vishay Siliconix	MOSFET N/P-CH 20V 3.1A 1206-8 RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	Limited Supply - Call
SI5513DC-T1-E3 DISTI # 70026247	Vishay Siliconix	MOSFET,20V N & P CH (D-S) Complementary RoHS: Compliant	0	3000:$0.5100 6000:$0.5000 15000:$0.4850 30000:$0.4640 75000:$0.4340
SI5513DC-T1-E3 DISTI # 781-SI5513DC-E3	Vishay Intertechnologies	MOSFET RECOMMENDED ALT 781-SI5513CDC-T1-GE3 RoHS: Compliant	0
SI5513DC-T1 DISTI # 781-SI5513DC	Vishay Intertechnologies	MOSFET RECOMMENDED ALT 781-SI5513CDC-T1-GE3 RoHS: Not compliant	0
SI5513DCT1E3	Vishay Intertechnologies	Small Signal Field-Effect Transistor, 3.1A I(D), 20V, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET RoHS: Compliant	16060
SI5513DC-T1-E3 DISTI # 1470128	Vishay Intertechnologies	MOSFET, DUAL, NP, 8-1206	0	500:£0.2270 250:£0.2520 100:£0.2760 10:£0.4140 1:£0.5590
SI5513DC-T1-E3 DISTI # 1470128	Vishay Intertechnologies	MOSFET, DUAL, NP, 8-1206 RoHS: Compliant	0	6000:$0.3150 3000:$0.3270 1000:$0.3380 500:$0.3580 250:$0.4210 100:$0.5120 10:$0.6530 1:$0.7890

관련 상품

영상	부분 #	설명
	Mfr.#: SI5513DC-T1-GE3 OMO.#: OMO-SI5513DC-T1-GE3	MOSFET
	Mfr.#: SI5513DC-T1-E3 OMO.#: OMO-SI5513DC-T1-E3	MOSFET RECOMMENDED ALT 781-SI5513CDC-T1-GE3
	Mfr.#: SI5513D-T1-E3 OMO.#: OMO-SI5513D-T1-E3-1190	신규 및 오리지널
	Mfr.#: SI5513DC OMO.#: OMO-SI5513DC-1190	신규 및 오리지널
	Mfr.#: SI5513DC-T1 OMO.#: OMO-SI5513DC-T1-1190	MOSFET RECOMMENDED ALT 781-SI5513CDC-T1-GE3
	Mfr.#: SI5513DC-T1 , MA22D3900L OMO.#: OMO-SI5513DC-T1-MA22D3900L-1190	신규 및 오리지널
	Mfr.#: SI5513DC-T1-E3 OMO.#: OMO-SI5513DC-T1-E3-VISHAY	MOSFET N/P-CH 20V 3.1A 1206-8
	Mfr.#: SI5513DC-T1-GE3 OMO.#: OMO-SI5513DC-T1-GE3-VISHAY	MOSFET N/P-CH 20V 3.1A 1206-8
	Mfr.#: SI5513DCT1E3 OMO.#: OMO-SI5513DCT1E3-1190	Small Signal Field-Effect Transistor, 3.1A I(D), 20V, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET

유효성

재고:: Available
주문 시:: 3000
수량 입력:

SI5513DC-T1-E3의 현재 가격은 참고용이며 최상의 가격을 원하시면 판매팀 [email protected]으로 문의 또는 다이렉트 이메일을 보내주십시오.

시작

SI5513DC-T 4
SI5513DC 6
SI5513D 7
SI5513 11
SI551 30
SI55 57
SI5 8250

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SI5513DC-T1-E3

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes