SI2319DS-T1-E3

Mfr. #:: SI2319DS-T1-E3
제조사:: Vishay
설명:: MOSFET P-CH 40V 2.3A SOT23-3
수명 주기:: 이 제조업체의 새 제품입니다.
데이터 시트:: SI2319DS-T1-E3 데이터 시트
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추가 정보:: SI2319DS-T1-E3 추가 정보

제품 속성
속성 값

제조사: 비쉐이

제품 카테고리: FET - 단일

시리즈: 트렌치FETR

포장: Digi-ReelR 대체 패키징

부분 별칭: SI2319DS-E3

단위 무게: 0.050717 oz

장착 스타일: SMD/SMT

패키지 케이스: TO-236-3, SC-59, SOT-23-3

기술: 시

작동 온도: -55°C ~ 150°C (TJ)

장착형: 표면 실장

채널 수: 1 Channel

공급자-장치-패키지: SOT-23-3 (TO-236)

구성: 하나의

FET형: MOSFET P-채널, 금속 산화물

파워맥스: 750mW

트랜지스터형: 1 P-Channel

드레인-소스 전압 Vdss: 40V

입력-커패시턴스-Ciss-Vds: 470pF @ 20V

FET 기능: 기준

Current-Continuous-Drain-Id-25°C: 2.3A (Ta)

Rds-On-Max-Id-Vgs: 82 mOhm @ 3A, 10V

Vgs-th-Max-Id: 3V @ 250μA

Gate-Charge-Qg-Vgs: 17nC @ 10V

Pd 전력 손실: 750 mW

최대 작동 온도: + 150 C

최소 작동 온도: - 55 C

가을철: 15 ns

상승 시간: 15 ns

Vgs 게이트 소스 전압: 20 V

Id-연속-드레인-전류: 2.3 A

Vds-드레인-소스-고장-전압: - 40 V

Rds-On-Drain-Source-Resistance: 82 mOhms

트랜지스터 극성: P-채널

일반 꺼짐 지연 시간: 25 ns

일반 켜기 지연 시간: 7 ns

채널 모드: 상승

Tags: SI2319DS-T, SI2319DS, SI2319D, SI2319, SI231, SI23, SI2

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Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

SI2319DS-T1-E3 설명

***th Star Micro: Transistor MOSFET P-CH 40V 2.3A 3-Pin SOT-23 T/R

***ure Electronics: Single P-Channel 40 V 82 mOhms Surface Mount Power Mosfet - SOT-23

***et Europe: Trans MOSFET P-CH 40V 2.3A 3-Pin SOT-23 T/R

***ied Electronics & Automation: TRANS MOSFET P-CH 40V 2.3A 3-PIN SOT-23T/R

***itex: Transisitor P-MOSFET, 3A, 40V, SOT23

***eco: P-CH MOSFET SOT-23 40V 82MOHM @ 10V<AZ

***Components: MOSFET P-Channel 40V 2.3A SOT23

***ark: P-Channel 40-V (D-S) Mosfet Rohs Compliant: No

***i-Key: MOSFET P-CH 40V 2.3A SOT23-3

***: P-CHANNEL 40-V (D-S) MOSFET

***ronik: P-CHANNEL-FET 3,0A 40V SOT23

***nell: MOSFET,P CH,40V,2.3A,SOT23-3; Transistor Polarity:P Channel; Current Id Max:-2.3A; Drain Source Voltage Vds:-40V; On State Resistance:65mohm; Rds(on) Test Voltage Vgs:-10V; Voltage Vgs Max:-20V; Power Dissipation:750mW; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SOT-23; No. of Pins:3

***ment14 APAC: MOSFET,P CH,40V,2.3A,SOT23-3; Transistor Polarity:P Channel; Continuous Drain Current Id:-3A; Drain Source Voltage Vds:-40V; On Resistance Rds(on):65mohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs Typ:-3V; Power Dissipation Pd:750mW; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SOT-23; No. of Pins:3; SVHC:No SVHC (15-Dec-2010); Current Id Max:-2.3A; Power Dissipation Pd:750mW; Voltage Vgs Max:-20V

SI2319DS-T1-E3 추가 정보

SI2 Series TrenchFET® Power MOSFETs: Vishay SI2 Series TrenchFET® Power MOSFETs are N-channel MOSFETs designed with 30V V(ds) and are 100% tested gate resistance(Rg). These MOSFETs have gate resistance tested for 1MHz frequency with 0.2Ω to 1.4Ω. These SI2 series MOSFETs operate from -55ºC to 150ºC junction and storage temperature. The SI2 series are ideal for DC/DC converter, Load switch, and power management.

Market price

부분 #	제조	설명	재고	가격
SI2319DS-T1-E3 DISTI # V72:2272_07432254	Vishay Intertechnologies	Trans MOSFET P-CH 40V 2.3A 3-Pin SOT-23 T/R RoHS: Compliant	41	25:$0.5101 10:$0.6604 1:$0.8145
SI2319DS-T1-E3 DISTI # V36:1790_07432254	Vishay Intertechnologies	Trans MOSFET P-CH 40V 2.3A 3-Pin SOT-23 T/R RoHS: Compliant	0
SI2319DS-T1-E3 DISTI # SI2319DS-T1-E3CT-ND	Vishay Siliconix	MOSFET P-CH 40V 2.3A SOT23-3 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	96859In Stock	1000:$0.3288 500:$0.4110 100:$0.5199 10:$0.6780 1:$0.7700
SI2319DS-T1-E3 DISTI # SI2319DS-T1-E3DKR-ND	Vishay Siliconix	MOSFET P-CH 40V 2.3A SOT23-3 RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	96859In Stock	1000:$0.3288 500:$0.4110 100:$0.5199 10:$0.6780 1:$0.7700
SI2319DS-T1-E3 DISTI # SI2319DS-T1-E3TR-ND	Vishay Siliconix	MOSFET P-CH 40V 2.3A SOT23-3 RoHS: Compliant Min Qty: 3000 Container: Tape & Reel (TR)	96000In Stock	30000:$0.2527 15000:$0.2594 6000:$0.2693 3000:$0.2893
SI2319DS-T1-E3 DISTI # 32706761	Vishay Intertechnologies	Trans MOSFET P-CH 40V 2.3A 3-Pin SOT-23 T/R RoHS: Compliant	54000	3000:$0.3446
SI2319DS-T1-E3 DISTI # 33718350	Vishay Intertechnologies	Trans MOSFET P-CH 40V 2.3A 3-Pin SOT-23 T/R RoHS: Compliant	18000	3000:$0.3656
SI2319DS-T1-E3 DISTI # 30714766	Vishay Intertechnologies	Trans MOSFET P-CH 40V 2.3A 3-Pin SOT-23 T/R RoHS: Compliant	480	12:$2.2000
SI2319DS-T1-E3 DISTI # 30667360	Vishay Intertechnologies	Trans MOSFET P-CH 40V 2.3A 3-Pin SOT-23 T/R RoHS: Compliant	41	24:$0.8145
SI2319DS-T1-E3 DISTI # SI2319DS-T1-E3	Vishay Intertechnologies	Trans MOSFET P-CH 40V 2.3A 3-Pin SOT-23 T/R - Cut TR (SOS) (Alt: SI2319DS-T1-E3) RoHS: Compliant Min Qty: 1 Container: Cut Tape	Americas - 1917	30000:$0.3016 18000:$0.3115 12000:$0.3220 6000:$0.3333 1:$0.3454
SI2319DS-T1-E3 DISTI # SI2319DS-T1-E3	Vishay Intertechnologies	Trans MOSFET P-CH 40V 2.3A 3-Pin SOT-23 T/R (Alt: SI2319DS-T1-E3) RoHS: Compliant Min Qty: 3000 Container: Tape and Reel	Europe - 0	30000:€0.2229 18000:€0.2399 12000:€0.2599 6000:€0.3019 3000:€0.4419
SI2319DS-T1-E3 DISTI # SI2319DS-T1-E3	Vishay Intertechnologies	Trans MOSFET P-CH 40V 2.3A 3-Pin SOT-23 T/R - Tape and Reel (Alt: SI2319DS-T1-E3) RoHS: Not Compliant Min Qty: 3000 Container: Reel	Americas - 0	30000:$0.2436 18000:$0.2503 12000:$0.2575 6000:$0.2684 3000:$0.2766
SI2319DS-T1-E3 DISTI # 06J7581	Vishay Intertechnologies	Trans MOSFET P-CH 40V 2.3A 3-Pin SOT-23 T/R - Product that comes on tape, but is not reeled (Alt: 06J7581) RoHS: Not Compliant Min Qty: 1 Container: Ammo Pack	Americas - 0	1000:$0.3800 500:$0.4750 250:$0.5250 100:$0.5750 50:$0.6680 25:$0.7590 1:$0.9500
SI2319DS-T1-E3 DISTI # 85W0177	Vishay Intertechnologies	Trans MOSFET P-CH 40V 2.3A 3-Pin SOT-23 T/R - Tape and Reel (Alt: 85W0177) RoHS: Not Compliant Min Qty: 3000 Container: Reel	Americas - 0	30000:$0.2980 18000:$0.3040 12000:$0.3100 6000:$0.3210 1:$0.3340
SI2319DS-T1-E3 DISTI # 85W0177	Vishay Intertechnologies	P CHANNEL MOSFET, -40V, 3A, TO-236, FULL REEL,Transistor Polarity:P Channel,Continuous Drain Current Id:-3A,Drain Source Voltage Vds:-40V,On Resistance Rds(on):0.065ohm,Rds(on) Test Voltage Vgs:4.5V,Threshold Voltage Vgs:-3V RoHS Compliant: Yes	54000	1:$0.2240 3000:$0.2240
SI2319DS-T1-E3 DISTI # 06J7581	Vishay Intertechnologies	P CHANNEL MOSFET, -40V, -3A, TO-236,Transistor Polarity:P Channel,Continuous Drain Current Id:-3A,Drain Source Voltage Vds:-40V,On Resistance Rds(on):0.065ohm,Rds(on) Test Voltage Vgs:4.5V,Threshold Voltage Vgs:-3V RoHS Compliant: Yes	41776	500:$0.2930 1000:$0.2930 100:$0.3170 250:$0.3170 1:$0.3460 25:$0.3460 50:$0.3460
SI2319DS-T1-E3. DISTI # 28AC2127	Vishay Intertechnologies	P-CHANNEL 40-V (D-S) MOSFET ROHS COMPLIANT: NO	0	1:$0.2790 3000:$0.2790
SI2319DS-T1-E3 DISTI # 70026411	Vishay Siliconix	TRANS MOSFET P-CH 40V 2.3A 3-PIN SOT-23T/R RoHS: Compliant	6387	1:$0.4380 25:$0.4040 100:$0.3930 250:$0.3590 500:$0.3480
SI2319DS-T1-E3 DISTI # 781-SI2319DS-T1-E3	Vishay Intertechnologies	MOSFET 40V 3.0A 1.25W 82 mohms @ 10V RoHS: Compliant	65426	1:$0.7500 10:$0.6060 100:$0.4590 500:$0.3800 1000:$0.3040 3000:$0.2750 6000:$0.2560 9000:$0.2470 24000:$0.2380
SI2319DS-T1 DISTI # 781-SI2319DS	Vishay Intertechnologies	MOSFET RECOMMENDED ALT 781-SI2319DS-T1-E3 RoHS: Compliant	0
SI2319DS-T1-E3	Vishay Intertechnologies	P-Ch 40 V 3 A 82 mOhm 750 mW SMT Power Mosfet - SOT-23-3 RoHS: Compliant	2918Cut Tape/Mini-Reel	1:$0.3850 100:$0.3200 250:$0.3100 500:$0.3000 1500:$0.2900
SI2319DS-T1-E3	Vishay Intertechnologies	P-Ch 40 V 3 A 82 mOhm 750 mW SMT Power Mosfet - SOT-23-3 RoHS: Compliant	30000Reel	3000:$0.2600
SI2319DS-T1-E3	Vishay Siliconix		2514
SI2319DS-T1-E3	Vishay Intertechnologies		2092
SI2319DS-T1-E3	Vishay Intertechnologies		829
SI2319DS-T1-E3 DISTI # 2371827	Vishay Intertechnologies	P CHANNEL MOSFET, -40V, 3A, TO-236, FULL REEL RoHS: Compliant	54000	6000:$0.4010 9000:$0.4010 3000:$0.4370
SI2319DS-T1-E3 DISTI # 1838990RL	Vishay Intertechnologies	MOSFET,P CH,40V,2.3A,SOT23-3 RoHS: Compliant	0	3000:$0.4160 1000:$0.4580 500:$0.5730 100:$0.6930 10:$0.9150 1:$1.1500
SI2319DS-T1-E3 DISTI # 1838990	Vishay Intertechnologies	MOSFET,P CH,40V,2.3A,SOT23-3 RoHS: Compliant	54192	3000:$0.4160 1000:$0.4580 500:$0.5730 100:$0.6930 10:$0.9150 1:$1.1500
SI2319DS-T1-E3 DISTI # 1838990	Vishay Intertechnologies	MOSFET,P CH,40V,2.3A,SOT23-3	90134	500:£0.2990 250:£0.3310 100:£0.3620 10:£0.5260 1:£0.6840
SI2319DS-T1-E3 DISTI # C1S803600844247	Vishay Intertechnologies	MOSFETs RoHS: Compliant	480	250:$0.3630 100:$0.3870 50:$0.4600 10:$0.8840 1:$1.7600
SI2319DS-T1-E3 DISTI # XSFP00000090653	Vishay Siliconix	RoHS: Compliant	25576 in Stock0 on Order	25576:$0.3467 3000:$0.3714
SI2319DS-T1-E3	Vishay Intertechnologies	MOSFET 40V 3.0A 1.25W 82 mohms @ 10V RoHS: Compliant	Americas - 27000	3000:$0.2680 6000:$0.2520 12000:$0.2470 18000:$0.2420

영상	부분 #	설명
	Mfr.#: SI2319DDS-T1-GE3 OMO.#: OMO-SI2319DDS-T1-GE3	MOSFET -40V Vds 20V Vgs SOT-23
	Mfr.#: SI2319DS-T1-E3 OMO.#: OMO-SI2319DS-T1-E3	MOSFET 40V 3.0A 1.25W 82 mohms @ 10V
	Mfr.#: SI2319DS-T1-GE3 OMO.#: OMO-SI2319DS-T1-GE3	MOSFET 40V 3.0A 1.25W 82mohm @ 10V
	Mfr.#: SI2319DS OMO.#: OMO-SI2319DS-1190	신규 및 오리지널
	Mfr.#: SI2319DS-1-E3 OMO.#: OMO-SI2319DS-1-E3-1190	신규 및 오리지널
	Mfr.#: SI2319DS-T1 OMO.#: OMO-SI2319DS-T1-1190	MOSFET RECOMMENDED ALT 781-SI2319DS-T1-E3
	Mfr.#: SI2319DS-T1-E3 OMO.#: OMO-SI2319DS-T1-E3-VISHAY	MOSFET P-CH 40V 2.3A SOT23-3
	Mfr.#: SI2319DS-T1-GE3 OMO.#: OMO-SI2319DS-T1-GE3-VISHAY	MOSFET P-CH 40V 2.3A SOT23-3
	Mfr.#: SI2319DDS-T1-GE3 OMO.#: OMO-SI2319DDS-T1-GE3-VISHAY	MOSFET P-CHAN 40V
	Mfr.#: SI2319DS-T1-E3-CUT TAPE OMO.#: OMO-SI2319DS-T1-E3-CUT-TAPE-1190	신규 및 오리지널

SI2319DS-T1-E3

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes