SI2316BDS-T1-GE3

Mfr. #:: SI2316BDS-T1-GE3
제조사:: Vishay
설명:: MOSFET N-CH 30V 4.5A SOT23-3
수명 주기:: 이 제조업체의 새 제품입니다.
데이터 시트:: SI2316BDS-T1-GE3 데이터 시트
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추가 정보:: SI2316BDS-T1-GE3 추가 정보

제품 속성
속성 값

Tags: SI2316BDS-T, SI2316B, SI2316, SI231, SI23, SI2

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Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

SI2316BDS-T1-GE3 설명

***ure Electronics: Si2316BDS Series N-Channel 30 V 50 mOhm 1.66 W Surface Mount Mosfet - TO-236

***et: Trans MOSFET N-CH 30V 3.9A 3-Pin SOT-23 T/R

***nell: N CHANNEL MOSFET, 30V, 4.5A, TO-236

***ment14 APAC: N CHANNEL MOSFET, 30V, 4.5A, TO-236; Tra; N CHANNEL MOSFET, 30V, 4.5A, TO-236; Transistor Polarity:N Channel; Continuous Drain Current Id:4.5A; Drain Source Voltage Vds:30V; On Resistance Rds(on):80mohm; Rds(on) Test Voltage Vgs:20V; Threshold Voltage Vgs:3V; No. of Pins:3

SI2316BDS-T1-GE3 추가 정보

SI2 Series TrenchFET® Power MOSFETs: Vishay SI2 Series TrenchFET® Power MOSFETs are N-channel MOSFETs designed with 30V V(ds) and are 100% tested gate resistance(Rg). These MOSFETs have gate resistance tested for 1MHz frequency with 0.2Ω to 1.4Ω. These SI2 series MOSFETs operate from -55ºC to 150ºC junction and storage temperature. The SI2 series are ideal for DC/DC converter, Load switch, and power management.

Market price

부분 #	제조	설명	재고	가격
SI2316BDS-T1-GE3 DISTI # V72:2272_09216799	Vishay Intertechnologies	Trans MOSFET N-CH 30V 3.9A 3-Pin SOT-23 T/R RoHS: Compliant	1359	1000:$0.2377 500:$0.2933 250:$0.3247 100:$0.3608 25:$0.4261 10:$0.5208 1:$0.6406
SI2316BDS-T1-GE3 DISTI # V36:1790_09216799	Vishay Intertechnologies	Trans MOSFET N-CH 30V 3.9A 3-Pin SOT-23 T/R RoHS: Compliant	0	3000000:$0.2045 1500000:$0.2047 300000:$0.2133 30000:$0.2263 3000:$0.2284
SI2316BDS-T1-GE3 DISTI # SI2316BDS-T1-GE3DKR-ND	Vishay Siliconix	MOSFET N-CH 30V 4.5A SOT23-3 RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	78345In Stock	1000:$0.2596 500:$0.3245 100:$0.4104 10:$0.5350 1:$0.6100
SI2316BDS-T1-GE3 DISTI # SI2316BDS-T1-GE3CT-ND	Vishay Siliconix	MOSFET N-CH 30V 4.5A SOT23-3 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	75345In Stock	1000:$0.2596 500:$0.3245 100:$0.4104 10:$0.5350 1:$0.6100
SI2316BDS-T1-GE3 DISTI # SI2316BDS-T1-GE3TR-ND	Vishay Siliconix	MOSFET N-CH 30V 4.5A SOT23-3 RoHS: Compliant Min Qty: 3000 Container: Tape & Reel (TR)	75000In Stock	30000:$0.1995 15000:$0.2047 6000:$0.2126 3000:$0.2284
SI2316BDS-T1-GE3 DISTI # 32316314	Vishay Intertechnologies	Trans MOSFET N-CH 30V 3.9A 3-Pin SOT-23 T/R RoHS: Compliant	33000	3000:$0.3219
SI2316BDS-T1-GE3 DISTI # 32878769	Vishay Intertechnologies	Trans MOSFET N-CH 30V 3.9A 3-Pin SOT-23 T/R RoHS: Compliant	3716	184:$0.4200
SI2316BDS-T1-GE3 DISTI # 30286303	Vishay Intertechnologies	Trans MOSFET N-CH 30V 3.9A 3-Pin SOT-23 T/R RoHS: Compliant	1359	34:$0.6406
SI2316BDS-T1-GE3 DISTI # SI2316BDS-T1-GE3	Vishay Intertechnologies	Trans MOSFET N-CH 30V 3.9A 3-Pin SOT-23 T/R - Tape and Reel (Alt: SI2316BDS-T1-GE3) RoHS: Not Compliant Min Qty: 3000 Container: Reel	Americas - 0	30000:$0.1923 18000:$0.1976 12000:$0.2032 6000:$0.2119 3000:$0.2183
SI2316BDS-T1-GE3 DISTI # 16P3710	Vishay Intertechnologies	Trans MOSFET N-CH 30V 3.9A 3-Pin SOT-23 T/R - Product that comes on tape, but is not reeled (Alt: 16P3710) RoHS: Not Compliant Min Qty: 1 Container: Ammo Pack	Americas - 0	1000:$0.3000 500:$0.3750 250:$0.4150 100:$0.4550 50:$0.5280 25:$0.5990 1:$0.7500
SI2316BDS-T1-GE3 DISTI # 29X0525	Vishay Intertechnologies	MOSFET, N CHANNEL, 30V, 4.5A, TO-236-3, FULL REEL,Transistor Polarity:N Channel,Continuous Drain Current Id:4.5A,Drain Source Voltage Vds:30V,On Resistance Rds(on):0.041ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3V RoHS Compliant: Yes	0	50000:$0.1940 30000:$0.2030 20000:$0.2180 10000:$0.2330 5000:$0.2520 1:$0.2580
SI2316BDS-T1-GE3 DISTI # 16P3710	Vishay Intertechnologies	N CHANNEL MOSFET, 30V, 4.5A, TO-236,Transistor Polarity:N Channel,Continuous Drain Current Id:4.5A,Drain Source Voltage Vds:30V,On Resistance Rds(on):0.08ohm,Rds(on) Test Voltage Vgs:20V,Threshold Voltage Vgs:3V RoHS Compliant: Yes	3716	500:$0.2310 1000:$0.2310 100:$0.2500 250:$0.2500 1:$0.2730 25:$0.2730 50:$0.2730
SI2316BDS-T1-GE3	Vishay Intertechnologies	Si2316BDS Series N-Channel 30 V 50 mOhm 1.66 W Surface Mount Mosfet - TO-236 RoHS: Compliant	48000Reel	3000:$0.1960
SI2316BDS-T1-GE3 DISTI # 781-SI2316BDS-T1-GE3	Vishay Intertechnologies	MOSFET 30V 4.5A 1.66W 50mohm @ 10V RoHS: Compliant	22607	1:$0.5900 10:$0.4780 100:$0.3630 500:$0.3000 1000:$0.2400 3000:$0.2170 6000:$0.2020 9000:$0.1950
SI2316BDS-T1-GE3	Vishay Siliconix	SMALL SIGNAL FIELD-EFFECT TRANSISTOR, 3.9A I(D), 30V, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-236	20	8:$0.5100 1:$0.6800
SI2316BDS-T1-GE3	Vishay Intertechnologies	MOSFET 30V 4.5A 1.66W 50mohm @ 10V RoHS: Compliant	Americas -
SI2316BDS-T1-GE3 DISTI # XSFP00000063437	Vishay Siliconix	RoHS: Compliant	39000 in Stock0 on Order	39000:$0.2613 3000:$0.2800

영상	부분 #	설명
	Mfr.#: SI2316BDS-T1-GE3 OMO.#: OMO-SI2316BDS-T1-GE3	MOSFET 30V 4.5A 1.66W 50mohm @ 10V
	Mfr.#: SI2316BDS-T1-E3 OMO.#: OMO-SI2316BDS-T1-E3	MOSFET 30V 4.5A 1.66W
	Mfr.#: SI2316BDS OMO.#: OMO-SI2316BDS-1190	신규 및 오리지널
	Mfr.#: SI2316BDS-T1-E3 OMO.#: OMO-SI2316BDS-T1-E3-VISHAY	MOSFET N-CH 30V 4.5A SOT-23
	Mfr.#: SI2316BDS-T1-GE3 OMO.#: OMO-SI2316BDS-T1-GE3-VISHAY	MOSFET N-CH 30V 4.5A SOT23-3
	Mfr.#: SI2316BDS-T1-E3-CUT TAPE OMO.#: OMO-SI2316BDS-T1-E3-CUT-TAPE-1190	신규 및 오리지널
	Mfr.#: SI2316BDS-T1-GE3-CUT TAPE OMO.#: OMO-SI2316BDS-T1-GE3-CUT-TAPE-1190	신규 및 오리지널

SI2316BDS-T1-GE3

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes