IPS135N03L G

Mfr. #:: IPS135N03L G
제조사:: infineon
설명:: IGBT Transistors MOSFET N-Ch 30V 30A IPAK-3 OptiMOS 3
수명 주기:: 이 제조업체의 새 제품입니다.
데이터 시트:: IPS135N03L G 데이터 시트
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ECAD Model:

제품 속성
속성 값

제조사: 인피니언

제품 카테고리: FET - 단일

시리즈: OptiMOS 3

포장: 튜브

부분 별칭: IPS135N03LGAKMA1 SP000788220

단위 무게: 0.139332 oz

장착 스타일: 구멍을 통해

상표명: 옵티모스

패키지 케이스: IPAK-3

기술: 시

채널 수: 1 Channel

구성: 하나의

트랜지스터형: 1 N-Channel

Pd 전력 손실: 31 W

최대 작동 온도: + 175 C

최소 작동 온도: - 55 C

가을철: 2 ns

상승 시간: 3 ns

Vgs 게이트 소스 전압: 20 V

Id-연속-드레인-전류: 30 A

Vds-드레인-소스-고장-전압: 30 V

Rds-On-Drain-Source-Resistance: 13.5 mOhms

트랜지스터 극성: N-채널

일반 꺼짐 지연 시간: 12 ns

일반 켜기 지연 시간: 3 ns

채널 모드: 상승

Tags: IPS135N03LG, IPS135, IPS13, IPS1, IPS

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

IPS135N03L G 설명

***et Europe: Trans MOSFET N-CH 30V 30A 3-Pin(3+Tab) TO-251

***ponent Stockers USA: 30 A 30 V 0.0135 ohm N-CHANNEL Si POWER MOSFET TO-251

***nell: MOSFET, N CH, 30A, 30V, PG-TO251-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 30A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.0113ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: -; Power Dissipation Pd: 31W; Transistor Case Style: TO-251; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: -; MSL: -; SVHC: No SVHC (27-Jun-2018); Current Id Max: 30A; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +175°C; Transistor Type: Power MOSFET; Voltage Vgs Max: 20V

***-Wing Technology: Tube Through Hole N-Channel Single Mosfet Transistor 6.9A Ta 35A Tc 35A 1.92W 21.4ns

***ser: MOSFETs- Power and Small Signal NFET 30V 35A 15MOHM

***ark: Transistor; Transistor Polarity:N Channel; Continuous Drain Current, Id:35A; Drain Source Voltage, Vds:30V; On Resistance, Rds(on):15mohm; Rds(on) Test Voltage, Vgs:10V; Threshold Voltage, Vgs Typ:2.5V; Power Dissipation, Pd:32.6W ;RoHS Compliant: Yes

***emi: Power MOSFET 30V 35A 15 mOhm Single N-Channel DPAK

***Yang: Trans MOSFET N-CH 30V 8.5A 3-Pin(3+Tab) IPAK Rail - Rail/Tube

***r Electronics: Power Field-Effect Transistor, 6.9A I(D), 30V, 0.015ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

***ark: Transistor; Transistor Polarity:N Channel; Continuous Drain Current, Id:35A; Drain Source Voltage, Vds:30V; On Resistance, Rds(on):13mohm; Rds(on) Test Voltage, Vgs:10V; Threshold Voltage, Vgs Typ:2.5V; Power Dissipation, Pd:32.6W ;RoHS Compliant: Yes

***emi: Power MOSFET 25V 62A 10.5 mOhm Single N-Channel DPAK

***Yang: Trans MOSFET N-CH 25V 32A 3-Pin(3+Tab) IPAK Rail - Rail/Tube

***ser: MOSFETs- Power and Small Signal 25V 62A N-Channel

***r Electronics: Power Field-Effect Transistor, 32A I(D), 25V, 0.0105ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

***S: French Electronic Distributor since 1988

***ark: Transistor; Transistor Polarity:N Channel; Continuous Drain Current, Id:62A; Drain Source Voltage, Vds:25V; On Resistance, Rds(on):10.5mohm; Rds(on) Test Voltage, Vgs:4.5V; Threshold Voltage, Vgs Typ:1.5V; Power Dissipation, Pd:58W ;RoHS Compliant: Yes

Market price

부분 #	제조	설명	재고	가격
IPS135N03LGAKMA1 DISTI # IPS135N03LGAKMA1-ND	Infineon Technologies AG	MOSFET N-CH 30V 30A TO251-3 RoHS: Compliant Min Qty: 1500 Container: Tube	Limited Supply - Call
IPS135N03L G DISTI # 726-IPS135N03LG	Infineon Technologies AG	MOSFET N-Ch 30V 30A IPAK-3 OptiMOS 3 RoHS: Compliant	0
IPS135N03LG	Infineon Technologies AG	Power Field-Effect Transistor, 30A I(D), 30V, 0.0135ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251 RoHS: Compliant	2861	1000:$0.1800 100:$0.1900 500:$0.1900 25:$0.2000 1:$0.2200

영상	부분 #	설명
	Mfr.#: IPS135N03L OMO.#: OMO-IPS135N03L-1190	신규 및 오리지널
	Mfr.#: IPS135N03LG OMO.#: OMO-IPS135N03LG-1190	Power Field-Effect Transistor, 30A I(D), 30V, 0.0135ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251
	Mfr.#: IPS135N03LGAKMA1 OMO.#: OMO-IPS135N03LGAKMA1-INFINEON-TECHNOLOGIES	MOSFET N-CH 30V 30A TO251-3
	Mfr.#: IPS135N03L G OMO.#: OMO-IPS135N03L-G-126	IGBT Transistors MOSFET N-Ch 30V 30A IPAK-3 OptiMOS 3

IPS135N03L G

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes