IRFB4115GPBF

Mfr. #:: IRFB4115GPBF
제조사:: Infineon Technologies
설명:: MOSFET MOSFT 150V 104A 11mOhm 77nCAB
수명 주기:: 이 제조업체의 새 제품입니다.
데이터 시트:: IRFB4115GPBF 데이터 시트
배달:: DHL FedEx Ups TNT EMS
지불:: T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:: IRFB4115GPBF Datasheet IRFB4115GPBF Datasheet (P4-P6)IRFB4115GPBF Datasheet (P7-P8)
ECAD Model:

제품 속성
속성 값

제조사:: 인피니언

제품 카테고리:: MOSFET

RoHS:: Y

기술:: 시

장착 스타일:: 구멍을 통해

패키지/케이스:: TO-220-3

채널 수:: 1 Channel

트랜지스터 극성:: N-채널

Vds - 드레인 소스 항복 전압:: 150 V

Id - 연속 드레인 전류:: 104 A

Rds On - 드레인 소스 저항:: 9.3 mOhms

Vgs - 게이트 소스 전압:: 20 V

Qg - 게이트 차지:: 77 nC

Pd - 전력 손실:: 380 W

구성:: 하나의

포장:: 튜브

키:: 15.65 mm

길이:: 10 mm

트랜지스터 유형:: 1 N-Channel

너비:: 4.4 mm

상표:: 인피니언 테크놀로지스

상품 유형:: MOSFET

공장 팩 수량:: 1000

하위 카테고리:: MOSFET

부품 번호 별칭:: SP001572390

단위 무게:: 0.211644 oz

Tags: IRFB4115, IRFB411, IRFB41, IRFB4, IRFB, IRF

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

IRFB4115GPBF 설명

***ernational Rectifier: 150V Single N-Channel HEXFET Power MOSFET in a Lead Free Halogen Free TO-220AB package

*** Source Electronics: Trans MOSFET N-CH Si 150V 104A 3-Pin(3+Tab) TO-220AB Tube / MOSFET N-CH 150V 104A TO220AB

***ure Electronics: Single N-Channel 150 V 11 mOhm 120 nC HEXFET® Power Mosfet - TO-220-3

***(Formerly Allied Electronics): MOSFET, 150V, 104A, 11 MOHM, 77 NC QG, TO220AB, HALOGEN-FREE

***ment14 APAC: N CH MOSFET, 150V, 104A, TO-220AB; Trans; N CH MOSFET, 150V, 104A, TO-220AB; Transistor Polarity:N Channel; Continuous Drain Current Id:104A; Drain Source Voltage Vds:150V; On Resistance Rds(on):9.3mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3V; MSL:-

***ure Electronics: Single N-Channel 150V 11 mOhm 120 nC HEXFET® Power Mosfet - TO-220-3

***ineon SCT: 150V Single N-Channel HEXFET Power MOSFET in a TO-220AB package, TO220-3, RoHS

***Yang: Trans MOSFET N-CH 150V 104A 3-Pin(3+Tab) TO-220AB Tube - Rail/Tube

***(Formerly Allied Electronics): MOSFET, 150V, 104A, 11 mOhm, 77 nC Qg, TO220AB

***roFlash: Power Field-Effect Transistor, 104A I(D), 150V, 0.011ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

***ment14 APAC: MOSFET, N-CH 150V 104A TO220; Transistor Polarity:N Channel; Continuous Drain Current Id:62A; Drain Source Voltage Vds:150V; On Resistance Rds(on):11mohm; Rds(on) Test Voltage Vgs:20V; Threshold Voltage Vgs Typ:5V; Power Dissipation Pd:380W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:104A; Package / Case:TO-220AB; Power Dissipation Pd:380W; Power Dissipation Pd:380W; Termination Type:Through Hole; Transistor Type:Power MOSFET; Voltage Vds Typ:150V; Voltage Vgs Max:5V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:5V

***eco: Transistor MOSFET N Channel 150 Volt 8 Amp 3-Pin 3+ Tab TO-220AB Tube

***ure Electronics: N-Channel 150 V 16 mO Flange Mount PowerTrench Mosfet - TO-220AB

***emi: N-Channel PowerTrench® MOSFET 150V, 79A, 16mΩ

***Yang: Trans MOSFET N-CH 150V 8A 3-Pin(3+Tab) TO-220AB Tube - Rail/Tube

***r Electronics: Power Field-Effect Transistor, 8A I(D), 150V, 0.016ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

***ment14 APAC: MOSFET, N, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:79A; Drain Source Voltage Vds:150V; On Resistance Rds(on):14mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:310W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:79A; Package / Case:TO-220AB; Power Dissipation Pd:310W; Power Dissipation Pd:310W; Pulse Current Idm:430A; SMD Marking:FDP2532; Termination Type:Through Hole; Voltage Vds Typ:150V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V

***p One Stop Global: Trans MOSFET N-CH 150V 85A 3-Pin(3+Tab) TO-220AB

*** Electronics: MOSFET 150V 85A 300W 21mohm @ 10V

***: 150V N-CH 175 DEG.C RATED TREN

***ment14 APAC: N CH MOSFET; Transistor Polarity:N Chann; N CH MOSFET; Transistor Polarity:N Channel; Continuous Drain Current Id:85A; Drain Source Voltage Vds:150V; On Resistance Rds(on):21mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2V; Power Dissipation Pd:2.4W; MSL:-

***(Formerly Allied Electronics): IRFB4321PBF N-channel MOSFET Transistor, 85 A, 150 V, 3-Pin TO-220AB

*** Source Electronics: Trans MOSFET N-CH 150V 85A 3-Pin(3+Tab) TO-220AB Tube / MOSFET N-CH 150V 83A TO-220AB

***ure Electronics: Single N-Channel 150V 15 mOhm 71 nC HEXFET® Power Mosfet - TO-220-3

***ineon SCT: 150V Single N-Channel HEXFET Power MOSFET in a TO-220AB package, TO220-3, RoHS

*** Stop Electro: Power Field-Effect Transistor, 75A I(D), 150V, 0.015ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

***ment14 APAC: MOSFET, N, 150V, TO-220AB; Transistor Polarity:N Channel; Continuous Drain Current Id:83A; Drain Source Voltage Vds:150V; On Resistance Rds(on):15mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:5V; Power Dissipation Pd:330W; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Base Number:4321; Current Id Max:83A; N-channel Gate Charge:71nC; Package / Case:TO-220AB; Power Dissipation Pd:330W; Power Dissipation Pd:330mW; Pulse Current Idm:330A; Termination Type:Through Hole; Voltage Vds Typ:150V; Voltage Vgs Max:5V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:5V; Voltage Vgs th Min:3V

***ineon SCT: 150V Single N-Channel PDP Switch HEXFET Power MOSFET in a TO-220AB package, TO220-3, RoHS

***ure Electronics: Single N-Channel 150 V 15 mOhm 71 nC HEXFET® Power Mosfet - TO-220-3

***Yang: Trans MOSFET N-CH 150V 83A 3-Pin(3+Tab) TO-220AB - Rail/Tube

***(Formerly Allied Electronics): MOSFET, 150V, 83A, 15 MOHM, 72 NC QG, TO-220AB

***trelec: MOSFET Operating temperature: -55...+175 °C Housing type: TO-220 Polarity: N Power dissipation: 330 W

***S.I.T. Europe - USA - Asia: Power Field-Effect Transistor, 83A I(D), 150V, 0.015ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

***nell: MOSFET, N CH, 150V, 83A, TO220AB; Transistor Polarity: N Channel; Continuous Drain Current Id: 33A; Drain Source Voltage Vds: 150V; On Resistance Rds(on): 0.015ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 5V; Power Dissipation Pd: 330W; Transistor Case Style: TO-220AB; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (27-Jun-2018); Base Number: 4228; Current Id Max: 83A; Driver Case Style: TO-220AB; Operating Temperature Min: -40°C; Operating Temperature Range: -40°C to +175°C; Output Resistance: 0.012ohm; Termination Type: Through Hole; Transistor Type: Power MOSFET; Voltage Vds Typ: 150V; Voltage Vgs Max: 30V; Voltage Vgs Rds on Measurement: 10V; Voltage Vgs th Max: 5V; Voltage Vgs th Min: 3V

***ure Electronics: Single N-Channel 150 V 0.146 Ohm 34 nC 135 W Flange Mount Mosfet - TO-220-3

***Yang: Trans MOSFET N-CH 150V 4A 3-Pin(3+Tab) TO-220AB Tube - Rail/Tube

***emi: N-Channel PowerTrench® MOSFET 150V, 29A, 54mΩ

***ter Electronics: TO-220AB, SINGLE, N-CH, 150V, 57MOHM ULTRAFET TRENCH MOSFET

***r Electronics: Power Field-Effect Transistor, 4A I(D), 150V, 0.054ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

***ment14 APAC: MOSFET, N CH 29A 150V, TO220AB; Transistor Polarity:N Channel; Continuous Drain Current Id:9A; Drain Source Voltage Vds:150V; On Resistance Rds(on):45mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:TO-220; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:29A; Package / Case:TO-220; Power Dissipation Pd:135W; Termination Type:Through Hole; Voltage Vds Typ:150V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V

Market price

부분 #	제조	설명	재고	가격
IRFB4115GPBF DISTI # 24111165	Infineon Technologies AG	Trans MOSFET N-CH Si 150V 104A 3-Pin(3+Tab) TO-220AB Tube RoHS: Compliant	996	250:$2.1696 100:$2.2848 50:$2.4384 25:$2.5728 6:$3.4272
IRFB4115GPBF DISTI # 31238418	Infineon Technologies AG	Trans MOSFET N-CH Si 150V 104A 3-Pin(3+Tab) TO-220AB Tube RoHS: Compliant	600	50:$3.0400
IRFB4115GPBF DISTI # IRFB4115GPBF-ND	Infineon Technologies AG	MOSFET N-CH 150V 104A TO220AB RoHS: Compliant Min Qty: 1 Container: Tube	1149In Stock	1000:$2.7527 500:$3.2640 100:$4.0308 10:$4.9160 1:$5.5100
IRFB4115GPBF DISTI # C1S322000488571	Infineon Technologies AG	Trans MOSFET N-CH Si 150V 104A 3-Pin(3+Tab) TO-220AB Tube RoHS: Compliant	1000	1000:$2.2400 500:$2.4100 100:$3.1500 50:$3.4300 10:$4.1700 1:$6.4400
IRFB4115GPBF DISTI # IRFB4115GPBF	Infineon Technologies AG	Trans MOSFET N-CH 150V 104A 3-Pin(3+Tab) TO-220AB - Rail/Tube (Alt: IRFB4115GPBF) RoHS: Compliant Min Qty: 1000 Container: Tube	Americas - 0	1000:$1.9900 2000:$1.8900 4000:$1.8900 6000:$1.7900 10000:$1.7900
IRFB4115GPBF DISTI # SP001572390	Infineon Technologies AG	Trans MOSFET N-CH 150V 104A 3-Pin(3+Tab) TO-220AB (Alt: SP001572390) RoHS: Compliant Min Qty: 1	Europe - 0	1:€2.0900 10:€1.9900 25:€1.8900 50:€1.7900 100:€1.6900 500:€1.6900 1000:€1.5900
IRFB4115GPBF DISTI # 70019678	Infineon Technologies AG	IRFB4115GPBF N-channel MOSFET Transistor,104 A,150 V,3-Pin TO-220AB RoHS: Compliant	0	200:$4.6400
IRFB4115GPBF	Infineon Technologies AG	RoHS: Not Compliant	100	1000:$2.2200 500:$2.3400 100:$2.4300 25:$2.5400 1:$2.7300
IRFB4115GPBF	Infineon Technologies AG	Single N-Channel 150 V 11 mOhm 120 nC HEXFET Power Mosfet - TO-220-3 RoHS: Compliant	1000Tube	5:$3.3800 25:$2.8600 50:$2.7500 250:$2.5300
IRFB4115GPBF DISTI # 942-IRFB4115GPBF	Infineon Technologies AG	MOSFET MOSFT 150V 104A 11mOhm 77nCAB RoHS: Compliant	446	1:$4.7400 10:$4.0300 100:$3.4900 250:$3.3100 500:$2.9700 1000:$2.5100 2000:$2.3800
IRFB4115GPBF DISTI # 8273953P	Infineon Technologies AG	HEXFET N-CH MOSFET 104A 150V TO-220AB, TU	32	50:£2.9100 100:£2.5200 250:£2.3900 500:£2.1550
IRFB4115GPBF	International Rectifier	104 A, 150 V, 0.011 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB	227	86:$2.0280 9:$2.3400 1:$4.6800
IRFB4115GPBF DISTI # XSFP00000020582	Infineon Technologies AG	Power Field-Effect Transistor,120AI(D),75V,0.0058ohm,1-Element,N-Channel,Silicon,Metal-oxideSemiconductor FET,TO-220AB RoHS: Compliant	673	50:$4.5100 673:$4.2200

영상	부분 #	설명
	Mfr.#: IR2113PBF OMO.#: OMO-IR2113PBF	Gate Drivers Hi&Lw Sd Drvr All HiVlt Pins 1 Sd
	Mfr.#: EMK212BB7106KG-T OMO.#: OMO-EMK212BB7106KG-T	Multilayer Ceramic Capacitors MLCC - SMD/SMT 10uF 16V X7R 10% 0805
	Mfr.#: FA28C0G1H471JNU00 OMO.#: OMO-FA28C0G1H471JNU00	Multilayer Ceramic Capacitors MLCC - Leaded 50V 470pF C0G 5% RAD LS:5mm AEC-Q200
	Mfr.#: IR2113PBF OMO.#: OMO-IR2113PBF-INFINEON-TECHNOLOGIES	IC MOSFET DVR HI/LO SIDE 14-DIP
	Mfr.#: B66389GX187 OMO.#: OMO-B66389GX187-1161	EMI/RFI Suppressors & Ferrites Ferrite Cores & Accessories FERRITE CORES & ACCESSORIES
	Mfr.#: 0251.500MAT1L OMO.#: OMO-0251-500MAT1L-LITTELFUSE	Fuses with Leads (Through Hole) 125V .5A
	Mfr.#: UJ31-CH-G2-SMT-TR OMO.#: OMO-UJ31-CH-G2-SMT-TR-CUI	USB jack 3.1, C type, 24 pin, horizonal, gold plating, surface mount, T&R

IRFB4115GPBF

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes