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| 부분 # | 제조 | 설명 | 재고 | 가격 |
|---|---|---|---|---|
| SKM 600GA125D DISTI # 09J5185 | SEMIKRON | IGBT Module,Transistor Polarity:NPN,DC Collector Current:580A,Collector Emitter Saturation Voltage Vce(on):3.3V,Power Dissipation Pd:-,Collector Emitter Voltage V(br)ceo:1.2kV,No. of Pins:5Pins,Operating Temperature Max:150°C RoHS Compliant: Yes | 0 |
|
| SKM600GA125D DISTI # 71043318 | SEMIKRON | SEMITRANS,Ultrafast NPT IGBT Module,200V,400A RoHS: Compliant | 0 |
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| 영상 | 부분 # | 설명 |
|---|---|---|
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Mfr.#: SKM600GA125D OMO.#: OMO-SKM600GA125D-1190 |
SEMITRANS, Ultrafast NPT IGBT Module, 200V, 400A |
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Mfr.#: SKM600GA128D OMO.#: OMO-SKM600GA128D-1190 |
신규 및 오리지널 |
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Mfr.#: SKM600GA12E4 OMO.#: OMO-SKM600GA12E4-1190 |
IGBT MODULE, SINGLE, 1.2KV, 913A, Transistor Polarity:NPN, DC Collector Current:913A, Collector Emitter Saturation Voltage Vce(on):1.8V, Power Dissipation Pd:-, Collector Emitter Voltage V(br)ceo |
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Mfr.#: SKM600GA12T4 OMO.#: OMO-SKM600GA12T4-1190 |
SEMITRANS, 1200V, 800A |
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Mfr.#: SKM600GA12V OMO.#: OMO-SKM600GA12V-1190 |
TRANSISTOR, Transistor Polarity:-, DC Collector Current:890A, Collector Emitter Saturation Voltage Vce(on):1.2kV, Power Dissipation Pd:-, Collector Emitter Voltage V(br)ceo:940mV, No. of Pins:5P |
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Mfr.#: SKM600GA173D OMO.#: OMO-SKM600GA173D-1190 |
신규 및 오리지널 |
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Mfr.#: SKM600GA176D OMO.#: OMO-SKM600GA176D-1190 |
IGBT Array & Module Transistor, N Channel, 660 A, 2 V, 1.7 kV, Module RoHS Compliant: Yes |
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Mfr.#: SKM600GB063D OMO.#: OMO-SKM600GB063D-1190 |
신규 및 오리지널 |
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Mfr.#: SKM600GB066D OMO.#: OMO-SKM600GB066D-1190 |
SKM600GB066D, IGBT Halfbridge Module, N-channel, Dual, 760A 600V, 7-Pin D 56 |
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Mfr.#: SKM600GB126D OMO.#: OMO-SKM600GB126D-1190 |
IGBT MODULE, 1.2KV, 660A, SEMITRANS 3, Transistor Polarity:N Channel, DC Collector Current:660A, Collector Emitter Saturation Voltage Vce(on):2.15V, Power Dissipation Pd:-, Collector Emitter Volt |