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| 부분 # | 제조 | 설명 | 재고 | 가격 |
|---|---|---|---|---|
| SIR402DP-T1-GE3 DISTI # V36:1790_09215727 | Vishay Intertechnologies | Trans MOSFET N-CH 30V 20.7A 8-Pin PowerPAK SO EP T/R RoHS: Compliant | 0 |
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| SIR402DP-T1-GE3 DISTI # SIR402DP-T1-GE3CT-ND | Vishay Siliconix | MOSFET N-CH 30V 35A PPAK SO-8 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT) | 66In Stock |
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| SIR402DP-T1-GE3 DISTI # SIR402DP-T1-GE3DKR-ND | Vishay Siliconix | MOSFET N-CH 30V 35A PPAK SO-8 RoHS: Compliant Min Qty: 1 Container: Digi-Reel® | 66In Stock |
|
| SIR402DP-T1-GE3 DISTI # SIR402DP-T1-GE3TR-ND | Vishay Siliconix | MOSFET N-CH 30V 35A PPAK SO-8 RoHS: Compliant Min Qty: 3000 Container: Tape & Reel (TR) | Temporarily Out of Stock |
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| SIR402DP-T1-GE3 DISTI # SIR402DP-T1-GE3 | Vishay Intertechnologies | Trans MOSFET N-CH 30V 20.7A 8-Pin PowerPAK SO T/R - Tape and Reel (Alt: SIR402DP-T1-GE3) RoHS: Compliant Min Qty: 3000 Container: Reel | Americas - 0 |
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| SIR402DP-T1-GE3 DISTI # SIR402DP-T1-GE3 | Vishay Intertechnologies | Trans MOSFET N-CH 30V 20.7A 8-Pin PowerPAK SO T/R (Alt: SIR402DP-T1-GE3) RoHS: Compliant Min Qty: 3000 Container: Tape and Reel | Europe - 0 |
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| SIR402DP-T1-GE3 DISTI # 16P3649 | Vishay Intertechnologies | N CHANNEL MOSFET, 30V, 35A POWERPAK,Transistor Polarity:N Channel,Continuous Drain Current Id:35A,Drain Source Voltage Vds:30V,On Resistance Rds(on):0.048ohm,Rds(on) Test Voltage Vgs:20V,Threshold Voltage Vgs:20V RoHS Compliant: Yes | 0 |
|
| SIR402DP-T1-GE3 DISTI # 09P2630 | Vishay Intertechnologies | N-CHANNEL 30-V (D-S) MOSFET ROHS COMPLIANT: YES | 0 |
|
| SIR402DP-T1-E3 DISTI # 40P0791 | Vishay Intertechnologies | MOSFET, N, SO-8,Transistor Polarity:N Channel,Continuous Drain Current Id:35A,Drain Source Voltage Vds:30V,On Resistance Rds(on):0.006ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:1.15V,Power Dissipation Pd:4.2W RoHS Compliant: Yes | 150 |
|
| SIR402DP-T1-GE3 DISTI # 781-SIR402DP-T1-GE3 | Vishay Intertechnologies | MOSFET 30V Vds 20V Vgs PowerPAK SO-8 RoHS: Compliant | 3536 |
|
| SIR402DP-T1-GE3 | Vishay Siliconix | 2966 | ||
| SIR402DP-T1-GE3 | MOUSER ELECTRONICS | 640 |
| |
| SIR402DP-T1-GE3 | Vishay Intertechnologies | 2375 | ||
| SIR402DPT1GE3 | Vishay Intertechnologies | Power Field-Effect Transistor, 20.7A I(D), 30V, 0.006ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET RoHS: Compliant | 3000 | |
| SIR402DP-T1-E3 DISTI # 1684086 | Vishay Intertechnologies | MOSFET, N, SO-8 RoHS: Compliant | 150 |
|
| SIR402DP-T1-E3 DISTI # 1684086RL | Vishay Intertechnologies | MOSFET, N, SO-8 RoHS: Compliant | 0 |
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| SIR402DP-T1-E3 DISTI # 1684086 | Vishay Intertechnologies | MOSFET, N, SO-8 | 2256 |
|
| SIR402DP-T1-GE3 | Vishay Intertechnologies | MOSFET 30V Vds 20V Vgs PowerPAK SO-8 | Americas - |
| 영상 | 부분 # | 설명 |
|---|---|---|
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Mfr.#: SIR878BDP-T1-RE3 OMO.#: OMO-SIR878BDP-T1-RE3 |
MOSFET 100V Vds 20V Vgs PowerPAK SO-8 |
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Mfr.#: SIR826ADP-T1-GE3 OMO.#: OMO-SIR826ADP-T1-GE3 |
MOSFET 80V Vds 20V Vgs PowerPAK SO-8 |
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Mfr.#: SIR880DP-T1-GE3 OMO.#: OMO-SIR880DP-T1-GE3 |
MOSFET 80V Vds 20V Vgs PowerPAK SO-8 |
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Mfr.#: SIR-S4-112A OMO.#: OMO-SIR-S4-112A-1190 |
신규 및 오리지널 |
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Mfr.#: SIR402DP-T1-E3 OMO.#: OMO-SIR402DP-T1-E3-1190 |
MOSFET, N, SO-8, Transistor Polarity:N Channel, Continuous Drain Current Id:35A, Drain Source Voltage Vds:30V, On Resistance Rds(on):0.006ohm, Rds(on) Test Voltage Vgs:10V, Threshold Voltage Vgs |
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Mfr.#: SIR418DP-T1-GE3 OMO.#: OMO-SIR418DP-T1-GE3-VISHAY |
MOSFET N-CH 40V 40A PPAK SO-8 |
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Mfr.#: SIR622DP-T1-GE3 OMO.#: OMO-SIR622DP-T1-GE3-VISHAY |
MOSFET N-CH 150V 51.6A SO-8 |
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Mfr.#: SIR662DP-T1-E3 OMO.#: OMO-SIR662DP-T1-E3-1190 |
신규 및 오리지널 |
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Mfr.#: SIRA34DP-T1-GE3 OMO.#: OMO-SIRA34DP-T1-GE3-VISHAY |
MOSFET N-CH 30V 40A PPAK SO-8 |
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Mfr.#: SIRA58DP-T1-GE3 OMO.#: OMO-SIRA58DP-T1-GE3-VISHAY |
MOSFET N-CH 40V 60A PPAK SO-8 |