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IPP60R280E6

IPP60R280E6
Mfr. #:
IPP60R280E6
제조사:
Infineon Technologies
설명:
MOSFET N-Ch 650V 13.8A TO220-3 CoolMOS E6
수명 주기:
이 제조업체의 새 제품입니다.
데이터 시트:
IPP60R280E6 데이터 시트
배달:
DHL FedEx Ups TNT EMS
지불:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
제품 속성
속성 값
제조사:
인피니언
제품 카테고리:
MOSFET
RoHS:
Y
기술:
시
장착 스타일:
구멍을 통해
패키지/케이스:
TO-220-3
채널 수:
1 Channel
트랜지스터 극성:
N-채널
Vds - 드레인 소스 항복 전압:
600 V
Id - 연속 드레인 전류:
13.8 A
Rds On - 드레인 소스 저항:
250 mOhms
Vgs - 게이트 소스 전압:
20 V
최소 작동 온도:
- 55 C
최대 작동 온도:
+ 150 C
Pd - 전력 손실:
104 W
구성:
하나의
상표명:
쿨모스
포장:
튜브
키:
15.65 mm
길이:
10 mm
시리즈:
CoolMOS E6
트랜지스터 유형:
1 N-Channel
너비:
4.4 mm
상표:
인피니언 테크놀로지스
상품 유형:
MOSFET
공장 팩 수량:
500
하위 카테고리:
MOSFET
부품 번호 별칭:
IPP60R280E6XKSA1 IPP6R28E6XK SP000797290
단위 무게:
0.211644 oz
Tags
IPP60R280E, IPP60R28, IPP60R2, IPP60R, IPP60, IPP6, IPP
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans MOSFET N-CH 600V 13.8A 3-Pin(3+Tab) TO-220 Tube
*** Stop Electro
Power Field-Effect Transistor, 13.8A I(D), 600V, 0.28ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***ineon SCT
CoolMOS™ E6 combines Infineon's experience as the leading superjunction MOSFET supplier with best-in-class innovation, PG-TO220-3, RoHS
***ineon
CoolMOS E6 combines Infineon's experience as the leading superjunction MOSFET supplier with best-in-class innovation. The offered devices provide all benefits of a fast switching SJ MOSFET while not sacrificing ease-of-use. Extremely low switching and conduction losses make switching applications even more efficient, compact, lighter and cooler. | Summary of Features: Easy control of switching behavior; Very high commutation ruggedness; Extremely low losses due to very low Figure of Merit (R DS(ON)*Q g) and E oss); Easy to use; Better light load efficiency compared to C3; Outstanding reliability with proven CoolMOS quality combined with high body diode ruggedness; Better price performance in comparison to previous CoolMOS generations; More efficient, more compact, lighter and cooler | Benefits: Improved power density; Improved reliability; General purpose part can be used in both soft and hard switching topologies; Better light load effciency; Improved effciency in hard switching applications; Improved ease-of-use; Reduces possible ringing due to pcb layout and package parasitic effects | Target Applications: Consumer; Adapter; eMobility; PFC stages for server & telecom; SMPS; PC power; Solar; Lighting
부분 # 제조 설명 재고 가격
IPP60R280E6XKSA1
DISTI # IPP60R280E6XKSA1-ND		Infineon Technologies AGMOSFET N-CH 600V 13.8A TO220
RoHS: Compliant
Min Qty: 500
Container: Tube		Temporarily Out of Stock
  • 500:$1.5683
IPP60R280E6
DISTI # SP000797290		Infineon Technologies AGTrans MOSFET N-CH 600V 13.8A 3-Pin TO-220 Tube (Alt: SP000797290)
RoHS: Compliant
Min Qty: 1
Container: Tube		Europe - 0
  • 1:€1.5069
  • 10:€1.1709
  • 25:€1.0869
  • 50:€1.0529
  • 100:€1.0349
  • 500:€1.0259
  • 1000:€1.0119
IPP60R280E6XK
DISTI # IPP60R280E6XKSA1		Infineon Technologies AGTrans MOSFET N-CH 600V 13.8A 3-Pin(3+Tab) TO-220 - Rail/Tube (Alt: IPP60R280E6XKSA1)
RoHS: Compliant
Min Qty: 500
Container: Tube		Americas - 0
  • 500:$1.1729
  • 1000:$1.1309
  • 2000:$1.0899
  • 3000:$1.0529
  • 5000:$1.0349
IPP60R280E6
DISTI # 726-IPP60R280E6		Infineon Technologies AGMOSFET N-Ch 650V 13.8A TO220-3 CoolMOS E6
RoHS: Compliant		370
  • 1:$2.4000
  • 10:$2.0400
  • 100:$1.6300
  • 500:$1.4300
IPP60R280E6Infineon Technologies AGPower Field-Effect Transistor, 600V, 0.28ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
RoHS: Compliant		1351
  • 1000:$0.9900
  • 500:$1.0400
  • 100:$1.0800
  • 25:$1.1300
  • 1:$1.2200
IPP60R280E6XKSA1
DISTI # IPP60R280E6		Infineon Technologies AGN-Ch 600V 13,8A 104W 0,28R TO220
RoHS: Compliant		450
  • 1:€5.1000
  • 10:€2.1000
  • 50:€1.1000
  • 100:€1.0000
영상 부분 # 설명
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Mfr.#: SMAJ6.5CA

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BD140

Mfr.#: BD140

OMO.#: OMO-BD140

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BD139

Mfr.#: BD139

OMO.#: OMO-BD139

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FDG316P

Mfr.#: FDG316P

OMO.#: OMO-FDG316P

 MOSFET SC70-6 P-CH -30V
SMAJ6.5CA

Mfr.#: SMAJ6.5CA

OMO.#: OMO-SMAJ6-5CA-LITTELFUSE

 TVS Diodes - Transient Voltage Suppressors 6.5volts 500/1000uA 35.7 Amps Bi-Di
RGA101M1CBK-0611G

Mfr.#: RGA101M1CBK-0611G

OMO.#: OMO-RGA101M1CBK-0611G-1130

 Aluminum Electrolytic Capacitors - Leaded 16V 100uF 105C 6.3x11mm
RGA101M1EBK-0611G

Mfr.#: RGA101M1EBK-0611G

OMO.#: OMO-RGA101M1EBK-0611G-1130

 Aluminum Electrolytic Capacitors - Leaded 25V 100uF 105C 6.3x11mm
RGA101M1VBK-0811G

Mfr.#: RGA101M1VBK-0811G

OMO.#: OMO-RGA101M1VBK-0811G-1130

 Aluminum Electrolytic Capacitors - Leaded 35V 100uF 105C 8x11.5mm
FDG316P

Mfr.#: FDG316P

OMO.#: OMO-FDG316P-ON-SEMICONDUCTOR

 MOSFET P-CH 30V 1.6A SC70-6
55J1K0E

Mfr.#: 55J1K0E

OMO.#: OMO-55J1K0E-OHMITE

 Wirewound Resistors - Through Hole 5W 1K Ohm 5%
유효성
재고:
354
주문 시:
2337
수량 입력:
IPP60R280E6의 현재 가격은 참고용이며 최상의 가격을 원하시면 판매팀 [email protected]으로 문의 또는 다이렉트 이메일을 보내주십시오.
참고 가격(USD)
수량
단가
내선 가격
1
US$2.39
US$2.39
10
US$2.03
US$20.30
100
US$1.63
US$163.00
500
US$1.42
US$710.00
1000
US$1.18
US$1 180.00
2021년부터 반도체 공급 부족으로 인해 아래 가격은 2021년 이전 정상 가격입니다. 확인을 위해 문의를 보내주세요.
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