IXTN600N04T2

IXTN600N04T2
Mfr. #:
IXTN600N04T2
제조사:
Littelfuse
설명:
Gate Drivers GigaMOS Trench T2 HiperFET PWR MOSFET
수명 주기:
이 제조업체의 새 제품입니다.
데이터 시트:
IXTN600N04T2 데이터 시트
배달:
DHL FedEx Ups TNT EMS
지불:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
추가 정보:
IXTN600N04T2 추가 정보
제품 속성
속성 값
제조사
익시스
제품 카테고리
브리지 정류기
시리즈
IXTN600N04
유형
TrenchT2 GigaMOS
포장
튜브
단위 무게
1.340411 oz
장착 스타일
SMD/SMT
상표명
HiPerFET
패키지 케이스
SOT-227B
Pd 전력 손실
940 W
출력 전류
600 A
가을철
250 ns
상승 시간
20 ns
Tags
IXTN6, IXTN, IXT
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
N-Channel 40 V 600 A 1.05 mO Chassis Mount GigaMOS TrenchT2 Mosfet - SOT-227B
***ical
Trans MOSFET N-CH 40V 600A Automotive 4-Pin SOT-227B
GigaMOS™ TrenchT2™ Power MOSFETs
IXYS GigaMOS™ TrenchT2™ standard and HiPerFET™ Power MOSFETs are offered with drain-to-source voltage ratings from 40V to 170V and provide high current capabilities of up to 600A (Tc=@25ºC). The combined high current ratings of these devices and available compact package options provide designers the ability to control more power within a smaller footprint. These new IXYS GigaMOS Power MOSFETs incorporate IXYS TrenchT2 Technology, allowing for improved channel density while achieving lower on-state resistance and gate charge to facilitate energy-efficient switching at high speeds. These IXYS GigaMOS TrenchT2 Power MOSFETs eliminate multiple paralleled lower current rated MOSFET devices and provide the ability to control more power within a smaller footprint. These devices are designed for use in a wide range of applications, including synchronous rectification, DC-DC converter, battery charger, and switch-mode and resonant-mode power supplies.
부분 # 제조 설명 재고 가격
IXTN600N04T2
DISTI # V99:2348_15878365
IXYS CorporationTrans MOSFET N-CH 40V 600A Automotive 4-Pin SOT-227B
RoHS: Compliant
2
  • 500:$15.5400
  • 200:$16.3600
  • 100:$17.7500
  • 50:$18.3800
  • 25:$19.2500
  • 10:$20.8500
  • 5:$21.9300
  • 1:$22.7000
IXTN600N04T2
DISTI # IXTN600N04T2-ND
IXYS CorporationMOSFET N-CH 40V 600A SOT-227
RoHS: Compliant
Min Qty: 1
Container: Tube
370In Stock
  • 100:$21.7771
  • 10:$25.4990
  • 1:$27.5700
IXTN600N04T2
DISTI # 27158570
IXYS CorporationTrans MOSFET N-CH 40V 600A Automotive 4-Pin SOT-227B
RoHS: Compliant
26
  • 500:$16.5984
  • 200:$17.4432
  • 100:$19.0080
  • 50:$19.5744
  • 25:$20.4480
  • 10:$22.2528
  • 5:$23.3664
  • 1:$24.0576
IXTN600N04T2
DISTI # 27472446
IXYS CorporationTrans MOSFET N-CH 40V 600A Automotive 4-Pin SOT-227B
RoHS: Compliant
2
  • 1:$22.7000
IXTN600N04T2
DISTI # 747-IXTN600N04T2
IXYS CorporationDiscrete Semiconductor Modules GigaMOS Trench T2 HiperFET PWR MOSFET
RoHS: Compliant
449
  • 1:$25.0600
  • 5:$24.3400
  • 10:$23.1800
  • 25:$21.3000
  • 50:$20.3900
  • 100:$19.8000
  • 200:$18.1700
IXTN600N04T2
DISTI # C1S331700073039
IXYS CorporationTrans MOSFET N-CH 40V 600A Automotive 4-Pin SOT-227B
RoHS: Compliant
26
  • 25:$26.5000
  • 10:$28.7000
  • 5:$31.2000
  • 1:$38.0000
영상 부분 # 설명
IXTN600N04T2

Mfr.#: IXTN600N04T2

OMO.#: OMO-IXTN600N04T2

Discrete Semiconductor Modules GigaMOS Trench T2 HiperFET PWR MOSFET
IXTN60N50L2

Mfr.#: IXTN60N50L2

OMO.#: OMO-IXTN60N50L2

MOSFET 60 Amps 500V
IXTN600N04T2

Mfr.#: IXTN600N04T2

OMO.#: OMO-IXTN600N04T2-IXYS-CORPORATION

Gate Drivers GigaMOS Trench T2 HiperFET PWR MOSFET
IXTN60N50L2

Mfr.#: IXTN60N50L2

OMO.#: OMO-IXTN60N50L2-IXYS-CORPORATION

MOSFET N-CH 500V 53A SOT-227
유효성
재고:
Available
주문 시:
2000
수량 입력:
IXTN600N04T2의 현재 가격은 참고용이며 최상의 가격을 원하시면 판매팀 [email protected]으로 문의 또는 다이렉트 이메일을 보내주십시오.
참고 가격(USD)
수량
단가
내선 가격
1
US$23.31
US$23.31
10
US$22.14
US$221.44
100
US$20.98
US$2 097.90
500
US$19.81
US$9 906.75
1000
US$18.65
US$18 648.00
2021년부터 반도체 공급 부족으로 인해 아래 가격은 2021년 이전 정상 가격입니다. 확인을 위해 문의를 보내주세요.
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