IPW65R190C6

IPW65R190C6
Mfr. #:
IPW65R190C6
제조사:
Rochester Electronics, LLC
설명:
Darlington Transistors MOSFET N-Ch 700V 20.2A TO247-3 CoolMOS C6
수명 주기:
이 제조업체의 새 제품입니다.
데이터 시트:
IPW65R190C6 데이터 시트
배달:
DHL FedEx Ups TNT EMS
지불:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
제품 속성
속성 값
제조사
인피니언 테크놀로지스
제품 카테고리
트랜지스터 - FET, MOSFET - 단일
시리즈
CoolMOS C6
포장
튜브
부분 별칭
IPW65R190C6FKSA1 IPW65R190C6XK SP000863902
단위 무게
1.340411 oz
장착 스타일
구멍을 통해
상표명
쿨모스
패키지 케이스
TO-247-3
기술
채널 수
1 Channel
구성
하나의
트랜지스터형
1 N-Channel
Pd 전력 손실
151 W
최대 작동 온도
+ 150 C
최소 작동 온도
- 55 C
가을철
10 ns
상승 시간
12 ns
Vgs 게이트 소스 전압
20 V
Id-연속-드레인-전류
20.2 A
Vds-드레인-소스-고장-전압
700 V
Rds-On-Drain-Source-Resistance
190 mOhms
트랜지스터 극성
N-채널
일반 꺼짐 지연 시간
133 nS
Qg-Gate-Charge
73 nC
Tags
IPW65R190C6, IPW65R190C, IPW65R19, IPW65R1, IPW65R, IPW65, IPW6, IPW
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans MOSFET N-CH 700V 20.2A 3-Pin(3+Tab) TO-247 Tube
***et
Trans MOSFET N-CH 700V 20.2A 3-Pin(3+Tab) TO-247
***et Europe
Trans MOSFET N-CH 700V 20.2A 3-Pin TO-247 Tube
***i-Key
MOSFET N-CH 650V 20.2A TO247
***ronik
N-CH 650V 20,2A 190mOhm TO247-3 RoHSconf
***ukat
N-Ch 650V 20,2A 151W 0,19R TO247
***ineon
CoolMOS C6 combines 's experience as the leading superjunction MOSFET supplier with best-in-class innovation. The C6 devices provide all benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, compact, lighter and cooler. | Summary of Features: Easy control of switching behavior; Extremely low losses due to very low Figure of Merit (R DS(on)* Q g and E oss); Very high commutation ruggedness; Easy to use; Better light load efficiency compared to C3; Outstanding reliability with proven CoolMOS quality combined with high body diode ruggedness; Better price performance in comparison to previous CoolMOS generations; More efficient, more compact, lighter and cooler | Benefits: Improved power density; Improved reliability; General purpose part can be used in both soft and hard switching topologies; Better light load effciency; Improved effciency in hard switching applications; Improved ease-of-use; Reduces possible ringing due to pcb layout and package parasitic effects | Target Applications: Consumer; Adapter; eMobility; PFC stages for server & telecom; SMPS; PC power; Solar; Lighting
부분 # 제조 설명 재고 가격
IPW65R190C6FKSA1
DISTI # IPW65R190C6FKSA1-ND
Infineon Technologies AGMOSFET N-CH 650V 20.2A TO247
RoHS: Compliant
Min Qty: 240
Container: Tube
Limited Supply - Call
    IPW65R190C6
    DISTI # 726-IPW65R190C6
    Infineon Technologies AGMOSFET N-Ch 700V 20.2A TO247-3 CoolMOS C6
    RoHS: Compliant
    91
    • 1:$3.8300
    • 10:$3.2600
    • 100:$2.8200
    IPW65R190C6FKSA1
    DISTI # N/A
    Infineon Technologies AGMOSFET HIGH POWER_LEGACY0
      IPW65R190C6Infineon Technologies AGPower Field-Effect Transistor, 650V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247
      RoHS: Compliant
      470
      • 1000:$1.9600
      • 500:$2.0600
      • 100:$2.1400
      • 25:$2.2400
      • 1:$2.4100
      IPW65R190C6FKSA1Infineon Technologies AGPower Field-Effect Transistor, 650V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247
      RoHS: Compliant
      4080
      • 1000:$1.9600
      • 500:$2.0600
      • 100:$2.1400
      • 25:$2.2400
      • 1:$2.4100
      IPW65R190C6FKSA1
      DISTI # IPW65R190C6
      Infineon Technologies AGN-Ch 650V 20,2A 151W 0,19R TO247
      RoHS: Compliant
      265
      • 1:€3.8200
      • 10:€1.8200
      • 50:€1.3200
      • 100:€1.2600
      영상 부분 # 설명
      IPW65R080CFDA

      Mfr.#: IPW65R080CFDA

      OMO.#: OMO-IPW65R080CFDA

      MOSFET N-Ch 650V 43.3A TO247-3
      IPW65R095C7XKSA1

      Mfr.#: IPW65R095C7XKSA1

      OMO.#: OMO-IPW65R095C7XKSA1

      MOSFET HIGH POWER_NEW
      IPW65R070C6

      Mfr.#: IPW65R070C6

      OMO.#: OMO-IPW65R070C6

      MOSFET N-Ch 700V 53.5A TO247-3 CoolMOS C6
      IPW65R041CFDFKSA2

      Mfr.#: IPW65R041CFDFKSA2

      OMO.#: OMO-IPW65R041CFDFKSA2-INFINEON-TECHNOLOGIES

      HIGH POWER_LEGACY
      IPW65R037C6

      Mfr.#: IPW65R037C6

      OMO.#: OMO-IPW65R037C6-1190

      Trans MOSFET N-CH 700V 83.2A 3-Pin TO-247 Tube (Alt: SP000756284)
      IPW65R041CFD,IPW65R099C6

      Mfr.#: IPW65R041CFD,IPW65R099C6

      OMO.#: OMO-IPW65R041CFD-IPW65R099C6-1190

      신규 및 오리지널
      IPW65R070C6 65C6070

      Mfr.#: IPW65R070C6 65C6070

      OMO.#: OMO-IPW65R070C6-65C6070-1190

      신규 및 오리지널
      IPW65R080CFDFKSA1

      Mfr.#: IPW65R080CFDFKSA1

      OMO.#: OMO-IPW65R080CFDFKSA1-INFINEON-TECHNOLOGIES

      MOSFET N-CH 700V 43.3A TO247
      IPW65R099C6S

      Mfr.#: IPW65R099C6S

      OMO.#: OMO-IPW65R099C6S-1190

      신규 및 오리지널
      IPW65R190CFDAFKSA1

      Mfr.#: IPW65R190CFDAFKSA1

      OMO.#: OMO-IPW65R190CFDAFKSA1-INFINEON-TECHNOLOGIES

      RF Bipolar Transistors MOSFET N-Ch 650V 17.5A TO247-3
      유효성
      재고:
      Available
      주문 시:
      2000
      수량 입력:
      IPW65R190C6의 현재 가격은 참고용이며 최상의 가격을 원하시면 판매팀 [email protected]으로 문의 또는 다이렉트 이메일을 보내주십시오.
      참고 가격(USD)
      수량
      단가
      내선 가격
      1
      US$2.94
      US$2.94
      10
      US$2.79
      US$27.93
      100
      US$2.65
      US$264.60
      500
      US$2.50
      US$1 249.50
      1000
      US$2.35
      US$2 352.00
      2021년부터 반도체 공급 부족으로 인해 아래 가격은 2021년 이전 정상 가격입니다. 확인을 위해 문의를 보내주세요.
      시작
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