SI4925BDY-T1-GE3

Mfr. #:: SI4925BDY-T1-GE3
제조사:: Vishay
설명:: RF Bipolar Transistors MOSFET 30V 7.1A 2.0W 25mohm @ 10V
수명 주기:: 이 제조업체의 새 제품입니다.
데이터 시트:: SI4925BDY-T1-GE3 데이터 시트
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ECAD Model:
추가 정보:: SI4925BDY-T1-GE3 추가 정보

제품 속성
속성 값

제조사: 비쉐이 실리콘

제품 카테고리: FET - 어레이

시리즈: 트렌치FETR

포장: 테이프 및 릴(TR)

부분 별칭: SI4925BDY-GE3

단위 무게: 0.006596 oz

장착 스타일: SMD/SMT

패키지 케이스: 8-SOIC (0.154", 3.90mm Width)

기술: 시

작동 온도: -55°C ~ 150°C (TJ)

장착형: 표면 실장

채널 수: 2 Channel

공급자-장치-패키지: 8-SO

구성: 듀얼

FET형: 2 P-Channel (Dual)

파워맥스: 1.1W

트랜지스터형: 2 P-Channel

드레인-소스 전압 Vdss: 30V

입력-커패시턴스-Ciss-Vds: -

FET 기능: 로직 레벨 게이트

Current-Continuous-Drain-Id-25°C: 5.3A

Rds-On-Max-Id-Vgs: 25 mOhm @ 7.1A, 10V

Vgs-th-Max-Id: 3V @ 250μA

Gate-Charge-Qg-Vgs: 50nC @ 10V

Pd 전력 손실: 1.1 W

최대 작동 온도: + 150 C

최소 작동 온도: - 55 C

가을철: 12 ns

상승 시간: 12 ns

Vgs 게이트 소스 전압: 20 V

Id-연속-드레인-전류: 5.3 A

Vds-드레인-소스-고장-전압: - 30 V

Rds-On-Drain-Source-Resistance: 25 mOhms

트랜지스터 극성: P-채널

일반 꺼짐 지연 시간: 60 ns

일반 켜기 지연 시간: 9 ns

채널 모드: 상승

Tags: SI4925BDY-T, SI4925BD, SI4925B, SI4925, SI492, SI49, SI4

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Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

SI4925BDY-T1-GE3 설명

***ical: Trans MOSFET P-CH 30V 5.3A 8-Pin SOIC N T/R

***ark: DUAL P CH MOSFET; Module Configuration:Dual; Transistor Polarity:Dual P Channel; Continuous Drain Current Id:-5.3A; Drain Source Voltage Vds:-30V; On Resistance Rds(on):20mohm; Rds(on) Test Voltage Vgs:-10V ;RoHS Compliant: Yes

SI4925BDY-T1-GE3 추가 정보

Si4 MOSFETs: Vishay/Siliconix Si4 MOSFETs are TrenchFET® power MOSFETs used for amplifying electronic signals. These Si4 MOSFETs are available in N-channel, P-channel, and N- & P-channel. The Si4 MOSFETs offer different VGS, VDS, and temperature ranges. The Si4 MOSFETs operate in an enhancement mode and used for switching between electronic signals. These MOSFETs are a surface mount, 100% Rg and UIS tested, and comes in a reel-package.Learn More

Market price

부분 #	제조	설명	재고	가격
SI4925BDY-T1-GE3 DISTI # SI4925BDY-T1-GE3-ND	Vishay Siliconix	MOSFET 2P-CH 30V 5.3A 8-SOIC RoHS: Compliant Min Qty: 2500 Container: Tape & Reel (TR)	Temporarily Out of Stock	2500:$0.8167
SI4925BDY-T1-GE3 DISTI # SI4925BDY-T1-GE3	Vishay Intertechnologies	Trans MOSFET P-CH 30V 5.3A 8-Pin SOIC N T/R - Tape and Reel (Alt: SI4925BDY-T1-GE3) RoHS: Not Compliant Min Qty: 2500 Container: Reel	Americas - 0	2500:$0.5039 5000:$0.4889 10000:$0.4689 15000:$0.4559 25000:$0.4439
SI4925BDY-T1-GE3 DISTI # 15R5123	Vishay Intertechnologies	DUAL P CH MOSFET,Transistor Polarity:Dual P Channel,Continuous Drain Current Id:-5.3A,Drain Source Voltage Vds:-30V,On Resistance Rds(on):0.02ohm,Rds(on) Test Voltage Vgs:-10V,Threshold Voltage Vgs:-3V,No. of Pins:8Pins RoHS Compliant: Yes	0	1:$0.9240 1000:$0.8690 2000:$0.8250 4000:$0.7430 6000:$0.7150 10000:$0.6880
SI4925BDY-T1-GE3 DISTI # 84R8065	Vishay Intertechnologies	DUAL P CH MOSFET,Transistor Polarity:Dual P Channel,Continuous Drain Current Id:-5.3A,Drain Source Voltage Vds:-30V,On Resistance Rds(on):0.02ohm,Rds(on) Test Voltage Vgs:-10V,Threshold Voltage Vgs:-3V,No. of Pins:8Pins RoHS Compliant: Yes	0	1:$1.3000 10:$1.0700 25:$0.9870 50:$0.9030 100:$0.8200 250:$0.7630 500:$0.7050
SI4925BDY-T1-GE3 DISTI # 781-SI4925BDY-GE3	Vishay Intertechnologies	MOSFET 30V 7.1A 2.0W 25mohm @ 10V RoHS: Compliant	1844	1:$1.4400 10:$1.1800 100:$0.9110 500:$0.7840 1000:$0.6190

관련 상품

영상	부분 #	설명
	Mfr.#: SI4925BDY-T1-GE3 OMO.#: OMO-SI4925BDY-T1-GE3	MOSFET 30V 7.1A 2.0W 25mohm @ 10V
	Mfr.#: SI4925BDY-T1-E3 OMO.#: OMO-SI4925BDY-T1-E3	MOSFET 30 Volt 7.1 Amp 2.0W
	Mfr.#: SI4925BDY-T1-GE3 OMO.#: OMO-SI4925BDY-T1-GE3-VISHAY	RF Bipolar Transistors MOSFET 30V 7.1A 2.0W 25mohm @ 10V
	Mfr.#: SI4925BDY-T1-E3-CUT TAPE OMO.#: OMO-SI4925BDY-T1-E3-CUT-TAPE-1190	신규 및 오리지널
	Mfr.#: SI4925BDY OMO.#: OMO-SI4925BDY-1190	MOSFET 30V 7.1A 2W
	Mfr.#: SI4925BDY-E3 OMO.#: OMO-SI4925BDY-E3-1190	MOSFET 30V 7.1A 2W
	Mfr.#: SI4925BDY-T1 OMO.#: OMO-SI4925BDY-T1-1190	MOSFET Transistor, Matched Pair, P-Channel, SO
	Mfr.#: SI4925BDY-T1-E3 OMO.#: OMO-SI4925BDY-T1-E3-VISHAY	신규 및 오리지널
	Mfr.#: SI4925BDY-T1-E3. OMO.#: OMO-SI4925BDY-T1-E3--1190	신규 및 오리지널

유효성

재고:: Available
주문 시:: 3500
수량 입력:

SI4925BDY-T1-GE3의 현재 가격은 참고용이며 최상의 가격을 원하시면 판매팀 [email protected]으로 문의 또는 다이렉트 이메일을 보내주십시오.

참고 가격(USD)

수량
단가
내선 가격

1: ~~US$0.67~~; ~~US$0.67~~

10: ~~US$0.63~~; ~~US$6.33~~

100: ~~US$0.60~~; ~~US$59.93~~

500: ~~US$0.57~~; ~~US$283.00~~

1000: ~~US$0.53~~; ~~US$532.70~~

2021년부터 반도체 공급 부족으로 인해 아래 가격은 2021년 이전 정상 가격입니다. 확인을 위해 문의를 보내주세요.

시작

SI4925BDY-T 5
SI4925BD 7
SI4925B 8
SI4925 25
SI492 57
SI49 329
SI4 2994

SI4925BDY-T1-GE3

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes