2MBI200S-120-50

2MBI200S-120-50
Mfr. #:
2MBI200S-120-50
제조사:
Fuji Electric Co Ltd
설명:
IGBT, DUAL, MODULE, 200A, 1200V, NPT, Transistor Polarity:N Channel, DC Collector Current:200A, Collector Emitter Saturation Voltage Vce(on):2.6V, Power Dissipation Pd:1.5kW, Collector Emitter Vo
수명 주기:
이 제조업체의 새 제품입니다.
데이터 시트:
2MBI200S-120-50 데이터 시트
배달:
DHL FedEx Ups TNT EMS
지불:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
제품 속성
속성 값
Tags
2MBI200S, 2MBI20, 2MBI2, 2MBI, 2MB
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ied Electronics & Automation
Dual IGBT Module 200 A 1200V NPT; 300A; 2.6V
***ark
DUAL IGBT MODULE 200A 1200V NPT; Transistor Type:IGBT Module; Transistor Polarity:NPT; Voltage Vces:1200V; Max Current Ic Continuous a:300A; Max Voltage Vce Sat:2.6V; Power Dissipation:1500W; Case Style:M234; Termination Type:Screw; ;RoHS Compliant: Yes
***ment14 APAC
IGBT, DUAL, MODULE, 200A, 1200V, NPT; Module Configuration:Dual; Transistor Polarity:N Channel; DC Collector Current:200A; Collector Emitter Voltage Vces:2.6V; Power Dissipation Pd:1.5kW; Collector Emitter Voltage V(br)ceo:1.2kV; Transistor Case Style:Module; No. of Pins:7; Current Ic @ Vce Sat:200A; Current Ic Continuous a Max:200A; Current Temperature:25°C; External Depth:62mm; External Length / Height:30mm; External Width:108mm; Fall Time tf:450ns; Full Power Rating Temperature:25°C; Isolation Voltage:2.5kV; Junction Temperature Tj Max:150°C; No. of Transistors:2; Package / Case:M234; Power Dissipation Max:1.5kW; Power Dissipation Pd:1.5kW; Power Dissipation Pd:1.5kW; Pulsed Current Icm:400A; Rise Time:350ns; Termination Type:Screw; Voltage Vces:1.2kV
부분 # 제조 설명 재고 가격
2MBI200S-120-50
DISTI # 56P5428
Fuji Electric Co LtdIGBT, DUAL, MODULE, 200A, 1200V, NPT,Transistor Polarity:N Channel,DC Collector Current:200A,Collector Emitter Saturation Voltage Vce(on):2.6V,Power Dissipation Pd:1.5kW,Collector Emitter Voltage V(br)ceo:1.2kV,Product Range:- RoHS Compliant: Yes0
    2MBI200S-120-50
    DISTI # 70212507
    Fuji Electric Co LtdDual IGBT Module 200 A 1200V NPT,300A,2.6V
    RoHS: Compliant
    0
    • 1:$194.0400
    • 5:$183.0600
    • 10:$173.2500
    • 25:$164.4400
    • 50:$156.4900
    2MBI200S-120-50
    DISTI # FE0000000001241
    Fuji Electric Co LtdIGBT STANDARD MODULE
    RoHS: Compliant
    0 in Stock0 on Order
    • 10:$188.9700
    • 1:$203.5000
    2MBI200S-120-50-M
    DISTI # FE0000000001242
    Fuji Electric Co LtdIGBT STANDARD MODULE
    RoHS: Compliant
    0 in Stock0 on Order
    • 10:$188.9700
    • 1:$203.5000
    2MBI200S-120-50
    DISTI # 1689579
    Fuji Electric Co LtdIGBT, DUAL, MODULE, 200A, 1200V, NPT
    RoHS: Compliant
    0
    • 10:$159.3100
    • 5:$162.0100
    • 2:$164.8000
    • 1:$167.7000
    영상 부분 # 설명
    2MBI200L-120

    Mfr.#: 2MBI200L-120

    OMO.#: OMO-2MBI200L-120-1190

    신규 및 오리지널
    2MBI200N-060-03

    Mfr.#: 2MBI200N-060-03

    OMO.#: OMO-2MBI200N-060-03-1190

    신규 및 오리지널
    2MBI200PB-140

    Mfr.#: 2MBI200PB-140

    OMO.#: OMO-2MBI200PB-140-1190

    300A, 1400V, N-CHANNEL IGBT
    2MBI200S-120

    Mfr.#: 2MBI200S-120

    OMO.#: OMO-2MBI200S-120-1190

    신규 및 오리지널
    2MBI200S-120-03

    Mfr.#: 2MBI200S-120-03

    OMO.#: OMO-2MBI200S-120-03-1190

    신규 및 오리지널
    2MBI200U2A-060

    Mfr.#: 2MBI200U2A-060

    OMO.#: OMO-2MBI200U2A-060-1190

    IGBT STANDARD MODULE
    2MBI200U2A-060-50

    Mfr.#: 2MBI200U2A-060-50

    OMO.#: OMO-2MBI200U2A-060-50-1190

    IGBT, DUAL, MODULE, 200A, 600V, NPT, Transistor Polarity:N Channel, DC Collector Current:200A, Collector Emitter Saturation Voltage Vce(on):2.45V, Power Dissipation Pd:660W, Collector Emitter Vol
    2MBI200U4H-120-50

    Mfr.#: 2MBI200U4H-120-50

    OMO.#: OMO-2MBI200U4H-120-50-1190

    IGBT, 2 PACK MODULE 1200V, 200A, M234, Transistor Polarity:N Channel, DC Collector Current:200A, Collector Emitter Saturation Voltage Vce(on):2.05V, Power Dissipation Pd:1.04kW, Collector Emitter
    2MBI200U4H-120E

    Mfr.#: 2MBI200U4H-120E

    OMO.#: OMO-2MBI200U4H-120E-1190

    신규 및 오리지널
    2MBI200U4H-170

    Mfr.#: 2MBI200U4H-170

    OMO.#: OMO-2MBI200U4H-170-1190

    300A, 1700V, N-CHANNEL IGBT
    유효성
    재고:
    Available
    주문 시:
    4500
    수량 입력:
    2MBI200S-120-50의 현재 가격은 참고용이며 최상의 가격을 원하시면 판매팀 [email protected]으로 문의 또는 다이렉트 이메일을 보내주십시오.
    참고 가격(USD)
    수량
    단가
    내선 가격
    1
    US$177.63
    US$177.63
    10
    US$168.75
    US$1 687.49
    100
    US$159.87
    US$15 986.70
    500
    US$150.99
    US$75 492.75
    1000
    US$142.10
    US$142 104.00
    2021년부터 반도체 공급 부족으로 인해 아래 가격은 2021년 이전 정상 가격입니다. 확인을 위해 문의를 보내주세요.
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