QPD1008

Mfr. #:: QPD1008
제조사:: Qorvo
설명:: RF JFET Transistors DC-3.2GHz 120W 50V SSG 17.5dB GaN
수명 주기:: 이 제조업체의 새 제품입니다.
데이터 시트:: QPD1008 데이터 시트
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ECAD Model:
추가 정보:: QPD1008 추가 정보

제품 속성
속성 값

Tags: QPD100, QPD10, QPD1, QPD

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We provide 90-360 days warranty.

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Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

QPD1008 설명

***W: RF Power Transistor, DC to 4.0 GHz, 125 W, 50 V, GaN, NI-360 ceramic

***hardson RFPD: RF POWER TRANSISTOR

QPD1008 추가 정보

QPD GaN RF Transistors: Qorvo QPD GaN RF Transistors can be used in Doherty architecture for the final stage of a base station power amplifier for macrocell high-efficiency systems. These GaN transistors are discrete GaN on SiC HEMTs with a single-stage matched power amplifier transistor. Typical applications include W-CDMA/LTE, Macrocell base station, active antenna and general purpose applications.

Market price

부분 #	제조	설명	재고	가격
QPD1008L DISTI # QPD1008L-ND	RF Micro Devices Inc	RF TRANSISTOR 125W 50V NI-360 RoHS: Compliant Container: Bulk	Limited Supply - Call
QPD1008 DISTI # 772-QPD1008	Qorvo	RF JFET Transistors DC-3.2GHz 120W 50V SSG 17.5dB GaN RoHS: Compliant	50	1:$200.0000 25:$173.0000
QPD1008L DISTI # 772-QPD1008L	Qorvo	RF JFET Transistors DC-3.2GHz 120W 50V SSG 17.5dB GaN RoHS: Compliant	43	1:$200.0000 25:$173.0000
QPD1008 EVB DISTI # 772-QPD1008EB	Qorvo	RF Development Tools 960-1215MHz GaN Eval Board RoHS: Compliant	3	1:$875.0000

관련 상품

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