ALD212900APAL

ALD212900APAL
Mfr. #:
ALD212900APAL
제조사:
Advanced Linear Devices
설명:
IGBT Transistors MOSFET Dual N-Ch EPAD FET Array VGS=0.0V
수명 주기:
이 제조업체의 새 제품입니다.
데이터 시트:
ALD212900APAL 데이터 시트
배달:
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지불:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
제품 속성
속성 값
제조사
Advanced Linear Devices Inc.
제품 카테고리
FET - 어레이
시리즈
EPADR, 제로 임계값
포장
튜브
단위 무게
0.032805 oz
장착 스타일
구멍을 통해
패키지 케이스
8-DIP (0.300", 7.62mm)
기술
작동 온도
0°C ~ 70°C (TJ)
장착형
구멍을 통해
채널 수
2 Channel
공급자-장치-패키지
8-PDIP
구성
듀얼
FET형
2 N-Channel (Dual) Matched Pair
파워맥스
500mW
트랜지스터형
2 N-Channel
드레인-소스 전압 Vdss
10.6V
입력-커패시턴스-Ciss-Vds
30pF @ 5V
FET 기능
로직 레벨 게이트
Current-Continuous-Drain-Id-25°C
80mA
Rds-On-Max-Id-Vgs
14 Ohm
Vgs-th-Max-Id
10mV @ 20μA
Gate-Charge-Qg-Vgs
-
Pd 전력 손실
500 mW
최대 작동 온도
+ 70 C
최소 작동 온도
0 C
Id-연속-드레인-전류
79 mA
Vds-드레인-소스-고장-전압
10 V
Vgs-th-Gate-Source-Threshold-Voltage
0 V
Rds-On-Drain-Source-Resistance
14 Ohms
트랜지스터 극성
N-채널
일반 꺼짐 지연 시간
10 ns
일반 켜기 지연 시간
10 ns
채널 모드
고갈
Tags
ALD212900, ALD21290, ALD2129, ALD212, ALD21, ALD2, ALD
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***i-Key
MOSFET 2N-CH 10.6V 0.08A 8DIP
부분 # 제조 설명 재고 가격
ALD212900APAL
DISTI # 1014-1215-ND
Advanced Linear Devices IncMOSFET 2N-CH 10.6V 0.08A 8DIP
RoHS: Compliant
Min Qty: 1
Container: Tube
37In Stock
  • 1000:$2.9820
  • 500:$3.5358
  • 100:$4.3665
  • 50:$4.7926
  • 1:$5.9600
ALD212900APAL
DISTI # 585-ALD212900APAL
Advanced Linear Devices IncMOSFET Dual N-Ch EPAD FET Array VGS=0.0V
RoHS: Compliant
51
  • 1:$5.3900
  • 10:$5.1700
  • 25:$4.7400
  • 50:$4.5200
  • 100:$4.3100
  • 250:$3.7700
  • 500:$3.6600
  • 1000:$3.1200
  • 2500:$2.9100
영상 부분 # 설명
ALD212908SAL

Mfr.#: ALD212908SAL

OMO.#: OMO-ALD212908SAL

MOSFET Dual N-Ch Matched Pr VGS=0.0V
ALD212900APAL

Mfr.#: ALD212900APAL

OMO.#: OMO-ALD212900APAL

MOSFET Dual N-Ch EPAD FET Array VGS=0.0V
ALD212904PAL

Mfr.#: ALD212904PAL

OMO.#: OMO-ALD212904PAL

MOSFET Dual N-Ch Matched Pr VGS=0.0V
ALD212914PAL

Mfr.#: ALD212914PAL

OMO.#: OMO-ALD212914PAL

MOSFET Dual N-Ch Matched Pr VGS=0.0V
ALD212900SAL

Mfr.#: ALD212900SAL

OMO.#: OMO-ALD212900SAL-ADVANCED-LINEAR-DEVICES

IGBT Transistors MOSFET Dual N-Ch EPAD FET Array VGS=0.0V
ALD212900PAL

Mfr.#: ALD212900PAL

OMO.#: OMO-ALD212900PAL-ADVANCED-LINEAR-DEVICES

IGBT Transistors MOSFET Dual N-Ch EPAD FET Array VGS=0.0V
ALD212914SAL

Mfr.#: ALD212914SAL

OMO.#: OMO-ALD212914SAL-ADVANCED-LINEAR-DEVICES

MOSFET Dual N-Ch Matched Pr VGS=0.0V
ALD212902PAL

Mfr.#: ALD212902PAL

OMO.#: OMO-ALD212902PAL-ADVANCED-LINEAR-DEVICES

MOSFET Dual N-Ch Matched Pr VGS=0.0V
ALD212611DN-R

Mfr.#: ALD212611DN-R

OMO.#: OMO-ALD212611DN-R-IDEC

신규 및 오리지널
ALD212611N-R

Mfr.#: ALD212611N-R

OMO.#: OMO-ALD212611N-R-1190

Switch Push Button N.O./N.C. DPST Extended Round Button 10A 440VAC 220VDC Momentary Contact Screw Panel Mount
유효성
재고:
Available
주문 시:
1500
수량 입력:
ALD212900APAL의 현재 가격은 참고용이며 최상의 가격을 원하시면 판매팀 [email protected]으로 문의 또는 다이렉트 이메일을 보내주십시오.
참고 가격(USD)
수량
단가
내선 가격
1
US$3.02
US$3.02
10
US$2.86
US$28.64
100
US$2.71
US$271.35
500
US$2.56
US$1 281.40
1000
US$2.41
US$2 412.00
시작
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