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| 부분 # | 제조 | 설명 | 재고 | 가격 |
|---|---|---|---|---|
| IPD035N06L3GATMA1 DISTI # IPD035N06L3GATMA1TR-ND | Infineon Technologies AG | MOSFET N-CH 60V 90A TO252-3 RoHS: Compliant Min Qty: 2500 Container: Tape & Reel (TR) | Limited Supply - Call | |
| IPD035N06L3GATMA1 DISTI # IPD035N06L3GATMA1CT-ND | Infineon Technologies AG | MOSFET N-CH 60V 90A TO252-3 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT) | Limited Supply - Call | |
| IPD035N06L3GATMA1 DISTI # IPD035N06L3GATMA1DKR-ND | Infineon Technologies AG | MOSFET N-CH 60V 90A TO252-3 RoHS: Compliant Min Qty: 1 Container: Digi-Reel® | Limited Supply - Call | |
| IPD035N06L3GATMA1 DISTI # IPD035N06L3GATMA1 | Infineon Technologies AG | Trans MOSFET N-CH 60V 90A 3-Pin TO-252 T/R - Bulk (Alt: IPD035N06L3GATMA1) RoHS: Compliant Min Qty: 397 Container: Bulk | Americas - 0 |
|
| IPD035N06L3 G DISTI # 60R2686 | Infineon Technologies AG | MOSFET, N CH, 60V, 90A, TO-252,Transistor Polarity:N Channel,Continuous Drain Current Id:90A,Drain Source Voltage Vds:60V,On Resistance Rds(on):0.0027ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:1.7V,Product Range:- RoHS Compliant: Yes | 0 | |
| IPD035N06L3 G DISTI # 726-IPD035N06L3G | Infineon Technologies AG | MOSFET N-Ch 60V 90A DPAK-2 RoHS: Compliant | 0 | |
| IPD035N06L3GATMA1 | Infineon Technologies AG | Power Field-Effect Transistor, 162A I(D), 60V, 0.0035ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA RoHS: Compliant | 1723 |
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| 영상 | 부분 # | 설명 |
|---|---|---|
|
Mfr.#: IPD035N06L3 G OMO.#: OMO-IPD035N06L3-G-1190 |
MOSFET, N CH, 60V, 90A, TO-252, Transistor Polarity:N Channel, Continuous Drain Current Id:90A, Drain Source Voltage Vds:60V, On Resistance Rds(on):0.0027ohm, Rds(on) Test Voltage Vgs:10V, Thres |
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Mfr.#: IPD035N06L3G OMO.#: OMO-IPD035N06L3G-1190 |
신규 및 오리지널 |
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Mfr.#: IPD035N06L3GATMA1 |
MOSFET N-CH 60V 90A TO252-3 |