SKM200GB126D

Mfr. #:: SKM200GB126D
제조사:: SEMIKRON
설명:: SEMITRANS, 1200V, 200A
수명 주기:: 이 제조업체의 새 제품입니다.
데이터 시트:: SKM200GB126D 데이터 시트
배달:: DHL FedEx Ups TNT EMS
지불:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:

제품 속성
속성 값

Tags: SKM200GB12, SKM200GB1, SKM200GB, SKM200G, SKM200, SKM20, SKM2, SKM

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

SKM200GB126D 설명

***trelec: IGBT Module SEMITRANS 3 1.2 kV

***ikron: Features: Trench = Trenchgate technology V CE(sat) with positive temperature coefficient High short circuit capability, self limiting to 6 x I C Typical Applications: AC inverter drives UPS Electronic welders

***ark: IGBT MODULE, 1.2KV, 260A, SEMITRANS 3; Continuous Collector Current:260A; Collector Emitter Saturation Voltage:2.1V; Power Dissipation:220W; Operating Temperature Max:150°C; IGBT Termination:Stud; Collector Emitter Voltage Max:1.2kV RoHS Compliant: Yes

***ment14 APAC: IGBT MODULE, DUAL, 1200V; Transistor Polarity:N Channel; DC Collector Current:260A; Collector Emitter Voltage Vces:2.15V; Power Dissipation Pd:220W; Collector Emitter Voltage V(br)ceo:1.2kV; Operating Temperature Range:-40°C to +150°C; Transistor Case Style:SEMITRANS 3; No. of Pins:7; SVHC:No SVHC (20-Jun-2011); Av Current Ic:260A; Current Ic Continuous a Max:260A; Current Ic Continuous b Max:190A; Current Temperature:25°C; External Depth:61.4mm; External Width:105mm; Fixing Centres:93mm; Fixing Hole Diameter:5.4mm; No. of Transistors:2; Package / Case:SEMITRANS 3; Power Dissipation Pd:220W; Pulsed Current Icm:200A; Rise Time:40ns; SMD Marking:SEMITRANS 3; Termination Type:Screw; Voltage:1.2kV; Voltage Vces:1.2kV

***ical: Trans IGBT Module N-CH 1200V 105A 350000mW 24-Pin EconoPIM3 Tray

***ineon SCT: EconoPIM™ 3 1200V three phase PIM IGBT module with IGBT3 and NTC, AG-ECONO3-3, RoHS

***ment14 APAC: IGBT MODULE, 1200V, ECONOPIM; Transistor Polarity:N Channel; DC Collector Current:105A; Emitter Saturation Voltage Vce(on):2.3V; Power

***ark: IGBT MODULE, 1200V, ECONOPIM; Continuous Collector Current:105A; Collector Emitter Saturation Voltage:2.3V; Power Dissipation:350W; Operating Temperature Max:125°C; IGBT Termination:Press Fit; Collector Emitter Voltage Max:1.2kV RoHS Compliant: Yes

***ineon: EconoPIM 3 1200V three phase PIM IGBT module with IGBT3 and NTC | Summary of Features: Low stray inductance module design; High reliability and power density; Copper base plate for optimized heat spread; Solderable pins; Low switching losses; High switching frequency; RoHS-compliant modules | Benefits: Compact module concept; Optimized customers development cycle time and cost; Configuration flexibility; Fast, reliable and low cost mounting concept | Target Applications: drives; medical; induction; aircon

***p One Stop: Trans IGBT Module N-CH 1200V 200A 680000mW 20-Pin ECONO4-1 Tray

***ark: Igbt Module; Continuous Collector Current:150A; Collector Emitter Saturation Voltage:2.15V; Power Dissipation:680W; Operating Temperature Max:150°C; Igbt Termination:stud; Collector Emitter Voltage Max:1.2Kv; Product Range:- Rohs Compliant: Yes

***ineon: EconoPACK 4 1200V sixpack IGBT module with fast Trench/Fieldstop IGBT4, Emitter Controlled 4 diode, NTC and PressFIT Contact Technology | Summary of Features: Extended Operation Temperature T(vj op); Low Switching Losses; Low V(CEsat); V(CEsat) with positive Temperature Coefficient; Isolated Base Plate; Standard Housing | Benefits: Compact Modules; Easy and most reliable assembly; No Plugs and Cables required; Ideal for Low Inductive System Designs | Target Applications: drives; solar; cav; ups

***ow.cn: Trans IGBT Module N-CH 1200V 135A 500000mW Automotive 20-Pin ECONO4-1 Tray

***ineon SCT: EconoPACK™ 4 1200V sixpack IGBT module with Trench/Fieldstop IGBT4, Emitter Controlled 4 diode, NTC and PressFIT Contact Technology, AG-ECONO4-1, RoHS

***ment14 APAC: IGBT, POW, QUAD W NTC, 1200V, 100A; Module Configuration:Six; Transistor Polarity:N Channel; DC Collector Current:100A; Collector Emitter Voltage Vces:1.75V; Power Dissipation Pd:500W; Collector Emitter Voltage V(br)ceo:1.2kV; Operating Temperature Range:-40°C to +150°C; Transistor Case Style:Module; No. of Pins:20; SVHC:No SVHC (19-Dec-2011); Power Dissipation Max:500W

***ineon: EconoPACK 4 1200V sixpack IGBT module with Trench/Fieldstop IGBT4, Emitter Controlled 4 diode, NTC and PressFIT Contact Technology | Summary of Features: Extended Operation Temperature T(vj op); Low Switching Losses; Low V(CEsat); V(CEsat) with positive Temperature Coefficient; Isolated Base Plate; Standard Housing | Benefits: Compact Modules; Easy and most reliable assembly; No Plugs and Cables required; Ideal for Low Inductive System Designs | Target Applications: drives; solar; cav; ups

***ical: Trans IGBT Module N-CH 1200V 220A 690000mW 7-Pin Case SP-6 Tube

*** Stop Electro: Insulated Gate Bipolar Transistor, 220A I(C), 1200V V(BR)CES, N-Channel

***rochip SCT: High Voltage Power Module, Dual common source, 1200V, RoHS

***ark: PM-IGBT-TFS-SP6C SP6C Tube RoHS Compliant: Yes

***i-Key: POWER MOD IGBT TRENCH DL SRC SP6

***ical: Trans IGBT Module N-CH 1200V 280A 890000mW 7-Pin Case SP-6 Tube

*** Stop Electro: Insulated Gate Bipolar Transistor, 280A I(C), 1200V V(BR)CES, N-Channel

***rochip SCT: High Voltage Power Module, Phase leg, 1200V, RoHS

***ark: PM-IGBT-TFS-SP6C SP6C Tube RoHS Compliant: Yes

***i-Key: POWER MODULE IGBT 1200V 200A SP6

*** Stop Electro: Insulated Gate Bipolar Transistor, 280A I(C), 1200V V(BR)CES, N-Channel

***et: Trans IGBT Module N-CH 1.2KV 280A 7-Pin Case SP6

***rochip SCT: High Voltage Power Module, Dual common source, 1200V, RoHS

***ark: PM-IGBT-TFS-SP6C SP6C Tube RoHS Compliant: Yes

***i-Key: POWER MOD IGBT TRENCH DL SRC SP6

Market price

부분 #	제조	설명	재고	가격
SKM 200 GB 126 D DISTI # 91H1922	SEMIKRON	IGBT MODULE, 1.2KV, 260A, SEMITRANS 3,Transistor Polarity:N Channel,DC Collector Current:260A,Collector Emitter Saturation Voltage Vce(on):2.15V,Power Dissipation Pd:220W,Collector Emitter Voltage V(br)ceo:1.2kV RoHS Compliant: Yes	0	100:$106.2400 50:$113.0400 25:$114.7400 10:$116.4400 5:$119.8400 1:$123.2400
SKM200GB126D DISTI # 71043274	SEMIKRON	SEMITRANS,1200V,200A RoHS: Compliant	0	1:$196.4100 12:$186.2500 48:$174.2300 96:$163.6800 144:$154.3300
SKM200GB126D DISTI # R1107998	SEMIKRON	SKM200GB126D RoHS: Compliant	0	1:$291.9000 2:$256.8000 5:$233.6000 10:$219.2000 20:$204.0000
SKM200GB126D DISTI # 4682460	SEMIKRON	IGBT MODULE DUAL SKM200GB126D 200A 1200V, EA	41	20:£115.2800 10:£123.5800 5:£131.6900 2:£144.8100 1:£164.5800
SKM200GB126D DISTI # SKM200GB126D	SEMIKRON	POWER IGBT TRANSISTOR RoHS: Compliant	0
SKM200GB126D DISTI # 1095517	SEMIKRON	RoHS: Compliant	0	50:$183.8800 10:$187.0600 1:$190.3400

영상	부분 #	설명
	Mfr.#: SKM200GAH123DKL11 OMO.#: OMO-SKM200GAH123DKL11-1190	신규 및 오리지널
	Mfr.#: SKM200GAH123DKL110 OMO.#: OMO-SKM200GAH123DKL110-1190	신규 및 오리지널
	Mfr.#: SKM200GAH123DKLD OMO.#: OMO-SKM200GAH123DKLD-1190	신규 및 오리지널
	Mfr.#: SKM200GAL123DKLD110 OMO.#: OMO-SKM200GAL123DKLD110-1190	신규 및 오리지널
	Mfr.#: SKM200GAL126DKL OMO.#: OMO-SKM200GAL126DKL-1190	신규 및 오리지널
	Mfr.#: SKM200GAR123D OMO.#: OMO-SKM200GAR123D-1190	신규 및 오리지널
	Mfr.#: SKM200GB12T4SIC2 OMO.#: OMO-SKM200GB12T4SIC2-1190	POWER IGBT TRANSISTOR
	Mfr.#: SKM200GBD123D1S OMO.#: OMO-SKM200GBD123D1S-1190	신규 및 오리지널
	Mfr.#: SKM200GBD1261S OMO.#: OMO-SKM200GBD1261S-1190	신규 및 오리지널
	Mfr.#: SKM200GBD126D1S OMO.#: OMO-SKM200GBD126D1S-1190	신규 및 오리지널

SKM200GB126D

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes